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JPS5379473A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5379473A
JPS5379473A JP15607176A JP15607176A JPS5379473A JP S5379473 A JPS5379473 A JP S5379473A JP 15607176 A JP15607176 A JP 15607176A JP 15607176 A JP15607176 A JP 15607176A JP S5379473 A JPS5379473 A JP S5379473A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
sio
film
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15607176A
Other languages
Japanese (ja)
Other versions
JPS5428273B2 (en
Inventor
Akira Tabata
Yunosuke Kawabe
Tsutomu Akatsuka
Yoshiyuki Namiki
Kuniaki Makabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15607176A priority Critical patent/JPS5379473A/en
Publication of JPS5379473A publication Critical patent/JPS5379473A/en
Publication of JPS5428273B2 publication Critical patent/JPS5428273B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)

Abstract

PURPOSE: To enhance the adhering performance between SiO2 film and the poly crystal layer, by first drilling a V-shaped isolation groove which is covered with SiO2 film and filling up the groove with laminated poly crystal Si layer grown by the vapor-growth method using a low and high voltage when the isolation pattern is formed on the semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP15607176A 1976-12-24 1976-12-24 Manufacture of semiconductor device Granted JPS5379473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15607176A JPS5379473A (en) 1976-12-24 1976-12-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15607176A JPS5379473A (en) 1976-12-24 1976-12-24 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5379473A true JPS5379473A (en) 1978-07-13
JPS5428273B2 JPS5428273B2 (en) 1979-09-14

Family

ID=15619658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15607176A Granted JPS5379473A (en) 1976-12-24 1976-12-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5379473A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133645A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Semiconductor integrated circuit device and manufacture thereof
JPS57162444A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57133645A (en) * 1981-02-12 1982-08-18 Fujitsu Ltd Semiconductor integrated circuit device and manufacture thereof
JPH0217937B2 (en) * 1981-02-12 1990-04-24 Fujitsu Ltd
JPS57162444A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5428273B2 (en) 1979-09-14

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