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JPS5372578A - Mis-type field effect transistor - Google Patents

Mis-type field effect transistor

Info

Publication number
JPS5372578A
JPS5372578A JP14845576A JP14845576A JPS5372578A JP S5372578 A JPS5372578 A JP S5372578A JP 14845576 A JP14845576 A JP 14845576A JP 14845576 A JP14845576 A JP 14845576A JP S5372578 A JPS5372578 A JP S5372578A
Authority
JP
Japan
Prior art keywords
mis
field effect
effect transistor
type field
insulator film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14845576A
Other languages
Japanese (ja)
Other versions
JPS6155262B2 (en
Inventor
Yoshiiku Togei
Takashi Matsumoto
Shigeru Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14845576A priority Critical patent/JPS5372578A/en
Publication of JPS5372578A publication Critical patent/JPS5372578A/en
Publication of JPS6155262B2 publication Critical patent/JPS6155262B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To secure an ideal drain current-voltage property, by forming the insulator film to be provided under the gate electrode thick at or near the drain region and unified with the thin insulator film to be provided at the area other than the drain region.
COPYRIGHT: (C)1978,JPO&Japio
JP14845576A 1976-12-10 1976-12-10 Mis-type field effect transistor Granted JPS5372578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14845576A JPS5372578A (en) 1976-12-10 1976-12-10 Mis-type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14845576A JPS5372578A (en) 1976-12-10 1976-12-10 Mis-type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5372578A true JPS5372578A (en) 1978-06-28
JPS6155262B2 JPS6155262B2 (en) 1986-11-27

Family

ID=15453142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14845576A Granted JPS5372578A (en) 1976-12-10 1976-12-10 Mis-type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5372578A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834817A (en) * 1988-09-08 1998-11-10 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834817A (en) * 1988-09-08 1998-11-10 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode

Also Published As

Publication number Publication date
JPS6155262B2 (en) 1986-11-27

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