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JPS5368991A - 4-transistor static memory cell - Google Patents

4-transistor static memory cell

Info

Publication number
JPS5368991A
JPS5368991A JP14506376A JP14506376A JPS5368991A JP S5368991 A JPS5368991 A JP S5368991A JP 14506376 A JP14506376 A JP 14506376A JP 14506376 A JP14506376 A JP 14506376A JP S5368991 A JPS5368991 A JP S5368991A
Authority
JP
Japan
Prior art keywords
memory cell
static memory
transistor static
constituting
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14506376A
Other languages
Japanese (ja)
Inventor
Shigeru Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14506376A priority Critical patent/JPS5368991A/en
Publication of JPS5368991A publication Critical patent/JPS5368991A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make perfect the holding of memory contents by constituting a memory cell with four C-MOSFETs and suitably determining the reverse bias leakage current of the PN junction constituting each FET.
JP14506376A 1976-12-02 1976-12-02 4-transistor static memory cell Pending JPS5368991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14506376A JPS5368991A (en) 1976-12-02 1976-12-02 4-transistor static memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14506376A JPS5368991A (en) 1976-12-02 1976-12-02 4-transistor static memory cell

Publications (1)

Publication Number Publication Date
JPS5368991A true JPS5368991A (en) 1978-06-19

Family

ID=15376512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14506376A Pending JPS5368991A (en) 1976-12-02 1976-12-02 4-transistor static memory cell

Country Status (1)

Country Link
JP (1) JPS5368991A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5644192A (en) * 1979-09-14 1981-04-23 Seiko Epson Corp Semiconductor memory cell circuit
JPS5644191A (en) * 1979-09-14 1981-04-23 Seiko Epson Corp Semiconductor memory cell circuit
JPS5651088A (en) * 1979-09-28 1981-05-08 Nec Corp Semiconductor memory device
US5519244A (en) * 1979-05-25 1996-05-21 Hitachi, Ltd. Semiconductor device having aligned semiconductor regions and a plurality of MISFETs
US6674105B2 (en) 1998-10-16 2004-01-06 Nec Corporation Semiconductor memory device and method of forming the same
US6690071B2 (en) 2001-11-30 2004-02-10 Fujitsu Limited Semiconductor device using junction leak current

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519244A (en) * 1979-05-25 1996-05-21 Hitachi, Ltd. Semiconductor device having aligned semiconductor regions and a plurality of MISFETs
JPS5644192A (en) * 1979-09-14 1981-04-23 Seiko Epson Corp Semiconductor memory cell circuit
JPS5644191A (en) * 1979-09-14 1981-04-23 Seiko Epson Corp Semiconductor memory cell circuit
JPS5651088A (en) * 1979-09-28 1981-05-08 Nec Corp Semiconductor memory device
US6674105B2 (en) 1998-10-16 2004-01-06 Nec Corporation Semiconductor memory device and method of forming the same
US6690071B2 (en) 2001-11-30 2004-02-10 Fujitsu Limited Semiconductor device using junction leak current
KR100780539B1 (en) * 2001-11-30 2007-11-29 후지쯔 가부시끼가이샤 Semiconductor device using junction leak current and its manufacture method

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