JPS5338278A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5338278A JPS5338278A JP11324076A JP11324076A JPS5338278A JP S5338278 A JPS5338278 A JP S5338278A JP 11324076 A JP11324076 A JP 11324076A JP 11324076 A JP11324076 A JP 11324076A JP S5338278 A JPS5338278 A JP S5338278A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- alterntely
- laminating
- mask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To make a three-dimensionally integrated device by alterntely laminating Al2O3 and Si of single crystal, and selectively forming SiO2 by performing thermal oxidation through the Al2O3 with a Si3N4 film as a mask.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11324076A JPS5820141B2 (en) | 1976-09-20 | 1976-09-20 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11324076A JPS5820141B2 (en) | 1976-09-20 | 1976-09-20 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5338278A true JPS5338278A (en) | 1978-04-08 |
JPS5820141B2 JPS5820141B2 (en) | 1983-04-21 |
Family
ID=14607110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11324076A Expired JPS5820141B2 (en) | 1976-09-20 | 1976-09-20 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5820141B2 (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57160156A (en) * | 1981-03-27 | 1982-10-02 | Mitsubishi Electric Corp | Semiconductor device |
JPS57180150A (en) * | 1981-04-30 | 1982-11-06 | Nec Corp | Semiconductor device |
JPS5887847A (en) * | 1981-11-20 | 1983-05-25 | Mitsubishi Electric Corp | Semiconductor device |
JPS5892238A (en) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | Manufacture of three dimensional circuit element |
JPS5990067U (en) * | 1982-12-09 | 1984-06-18 | トヨタ自動車株式会社 | vehicle fuel tank |
US4500905A (en) * | 1981-09-30 | 1985-02-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Stacked semiconductor device with sloping sides |
JPS60123049A (en) * | 1983-12-07 | 1985-07-01 | Agency Of Ind Science & Technol | Semiconductor solid circuit element |
JPS60161654A (en) * | 1984-02-02 | 1985-08-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor microwave circuit element |
JPS60161653A (en) * | 1984-02-02 | 1985-08-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor microwave circuit element |
JPS60161652A (en) * | 1984-02-02 | 1985-08-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor microwave circuit element |
JPS60180156A (en) * | 1984-02-28 | 1985-09-13 | Agency Of Ind Science & Technol | Manufacture of semiconductor solid circuit element |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
JPS6235550A (en) * | 1985-08-09 | 1987-02-16 | Agency Of Ind Science & Technol | Manufacture of semiconductor stereoscopic circuit element |
JPS6284554A (en) * | 1985-10-08 | 1987-04-18 | Agency Of Ind Science & Technol | Semiconductor device |
JPS6290922A (en) * | 1986-07-11 | 1987-04-25 | Hitachi Ltd | Semiconductor device |
JPS6477113A (en) * | 1988-06-10 | 1989-03-23 | Hitachi Ltd | Semiconductor device |
US4834809A (en) * | 1984-11-19 | 1989-05-30 | Sharp Kabushiki Kaisha | Three dimensional semiconductor on insulator substrate |
US5525536A (en) * | 1991-12-26 | 1996-06-11 | Rohm Co., Ltd. | Method for producing SOI substrate and semiconductor device using the same |
US6323528B1 (en) | 1991-03-06 | 2001-11-27 | Semiconductor Energy Laboratory Co,. Ltd. | Semiconductor device |
-
1976
- 1976-09-20 JP JP11324076A patent/JPS5820141B2/en not_active Expired
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57160156A (en) * | 1981-03-27 | 1982-10-02 | Mitsubishi Electric Corp | Semiconductor device |
JPS57180150A (en) * | 1981-04-30 | 1982-11-06 | Nec Corp | Semiconductor device |
US4500905A (en) * | 1981-09-30 | 1985-02-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Stacked semiconductor device with sloping sides |
JPS5887847A (en) * | 1981-11-20 | 1983-05-25 | Mitsubishi Electric Corp | Semiconductor device |
JPS5892238A (en) * | 1981-11-27 | 1983-06-01 | Mitsubishi Electric Corp | Manufacture of three dimensional circuit element |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
JPS5990067U (en) * | 1982-12-09 | 1984-06-18 | トヨタ自動車株式会社 | vehicle fuel tank |
JPS60123049A (en) * | 1983-12-07 | 1985-07-01 | Agency Of Ind Science & Technol | Semiconductor solid circuit element |
JPH0336306B2 (en) * | 1983-12-07 | 1991-05-31 | Kogyo Gijutsuin | |
JPH0336307B2 (en) * | 1984-02-02 | 1991-05-31 | Kogyo Gijutsuin | |
JPS60161652A (en) * | 1984-02-02 | 1985-08-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor microwave circuit element |
JPH0542825B2 (en) * | 1984-02-02 | 1993-06-29 | Kogyo Gijutsuin | |
JPS60161654A (en) * | 1984-02-02 | 1985-08-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor microwave circuit element |
JPS60161653A (en) * | 1984-02-02 | 1985-08-23 | Agency Of Ind Science & Technol | Manufacture of semiconductor microwave circuit element |
JPS60180156A (en) * | 1984-02-28 | 1985-09-13 | Agency Of Ind Science & Technol | Manufacture of semiconductor solid circuit element |
JPH0337740B2 (en) * | 1984-02-28 | 1991-06-06 | Kogyo Gijutsuin | |
US4834809A (en) * | 1984-11-19 | 1989-05-30 | Sharp Kabushiki Kaisha | Three dimensional semiconductor on insulator substrate |
JPH0519988B2 (en) * | 1985-08-09 | 1993-03-18 | Kogyo Gijutsuin | |
JPS6235550A (en) * | 1985-08-09 | 1987-02-16 | Agency Of Ind Science & Technol | Manufacture of semiconductor stereoscopic circuit element |
JPS6284554A (en) * | 1985-10-08 | 1987-04-18 | Agency Of Ind Science & Technol | Semiconductor device |
JPS6290922A (en) * | 1986-07-11 | 1987-04-25 | Hitachi Ltd | Semiconductor device |
JPS6477113A (en) * | 1988-06-10 | 1989-03-23 | Hitachi Ltd | Semiconductor device |
US6323528B1 (en) | 1991-03-06 | 2001-11-27 | Semiconductor Energy Laboratory Co,. Ltd. | Semiconductor device |
US6822261B2 (en) | 1991-03-06 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US5525536A (en) * | 1991-12-26 | 1996-06-11 | Rohm Co., Ltd. | Method for producing SOI substrate and semiconductor device using the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5820141B2 (en) | 1983-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5338278A (en) | Semiconductor device | |
JPS5351970A (en) | Manufacture for semiconductor substrate | |
JPS53148389A (en) | Manufacture for semiconductor device | |
JPS53135263A (en) | Production of semiconductor device | |
JPS5342689A (en) | Semiconductor device | |
JPS5317068A (en) | Semiconductor device and its production | |
JPS5423472A (en) | Manufacture for semiconductor device | |
JPS5436182A (en) | Manufacture for semiconductor device | |
JPS53133373A (en) | Manufacture of semiconductor device | |
JPS52131462A (en) | Manufacture of semiconductor device | |
JPS52139377A (en) | Production of semiconductor device | |
JPS52141580A (en) | Manufacture of mos-type semiconductor device | |
JPS52141573A (en) | Manufacture of semiconductor device | |
JPS546782A (en) | Semiconductor device and its manufacture | |
JPS53142870A (en) | Manufacture for semiconductor device | |
JPS52119192A (en) | Semiconductor | |
JPS5375771A (en) | Manufacture for semiconductor device | |
JPS5323584A (en) | Production of semiconductor device | |
JPS52119067A (en) | Semiconductor device | |
JPS5377169A (en) | Production of semiconductor device | |
JPS52105774A (en) | Oxidation proof mask applied in producing semiconductor device | |
JPS5255860A (en) | Production of semiconductor device | |
JPS5373990A (en) | Semiconductor device | |
JPS53112685A (en) | Semiconductor device and its manufacture | |
JPS5373973A (en) | Manufacture for semiconductor device |