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JPS5338278A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5338278A
JPS5338278A JP11324076A JP11324076A JPS5338278A JP S5338278 A JPS5338278 A JP S5338278A JP 11324076 A JP11324076 A JP 11324076A JP 11324076 A JP11324076 A JP 11324076A JP S5338278 A JPS5338278 A JP S5338278A
Authority
JP
Japan
Prior art keywords
semiconductor device
alterntely
laminating
mask
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11324076A
Other languages
Japanese (ja)
Other versions
JPS5820141B2 (en
Inventor
Masaru Ihara
Koichi Nishiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11324076A priority Critical patent/JPS5820141B2/en
Publication of JPS5338278A publication Critical patent/JPS5338278A/en
Publication of JPS5820141B2 publication Critical patent/JPS5820141B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To make a three-dimensionally integrated device by alterntely laminating Al2O3 and Si of single crystal, and selectively forming SiO2 by performing thermal oxidation through the Al2O3 with a Si3N4 film as a mask.
COPYRIGHT: (C)1978,JPO&Japio
JP11324076A 1976-09-20 1976-09-20 semiconductor equipment Expired JPS5820141B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11324076A JPS5820141B2 (en) 1976-09-20 1976-09-20 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11324076A JPS5820141B2 (en) 1976-09-20 1976-09-20 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5338278A true JPS5338278A (en) 1978-04-08
JPS5820141B2 JPS5820141B2 (en) 1983-04-21

Family

ID=14607110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11324076A Expired JPS5820141B2 (en) 1976-09-20 1976-09-20 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5820141B2 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160156A (en) * 1981-03-27 1982-10-02 Mitsubishi Electric Corp Semiconductor device
JPS57180150A (en) * 1981-04-30 1982-11-06 Nec Corp Semiconductor device
JPS5887847A (en) * 1981-11-20 1983-05-25 Mitsubishi Electric Corp Semiconductor device
JPS5892238A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp Manufacture of three dimensional circuit element
JPS5990067U (en) * 1982-12-09 1984-06-18 トヨタ自動車株式会社 vehicle fuel tank
US4500905A (en) * 1981-09-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Stacked semiconductor device with sloping sides
JPS60123049A (en) * 1983-12-07 1985-07-01 Agency Of Ind Science & Technol Semiconductor solid circuit element
JPS60161654A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of semiconductor microwave circuit element
JPS60161653A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of semiconductor microwave circuit element
JPS60161652A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of semiconductor microwave circuit element
JPS60180156A (en) * 1984-02-28 1985-09-13 Agency Of Ind Science & Technol Manufacture of semiconductor solid circuit element
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
JPS6235550A (en) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Manufacture of semiconductor stereoscopic circuit element
JPS6284554A (en) * 1985-10-08 1987-04-18 Agency Of Ind Science & Technol Semiconductor device
JPS6290922A (en) * 1986-07-11 1987-04-25 Hitachi Ltd Semiconductor device
JPS6477113A (en) * 1988-06-10 1989-03-23 Hitachi Ltd Semiconductor device
US4834809A (en) * 1984-11-19 1989-05-30 Sharp Kabushiki Kaisha Three dimensional semiconductor on insulator substrate
US5525536A (en) * 1991-12-26 1996-06-11 Rohm Co., Ltd. Method for producing SOI substrate and semiconductor device using the same
US6323528B1 (en) 1991-03-06 2001-11-27 Semiconductor Energy Laboratory Co,. Ltd. Semiconductor device

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160156A (en) * 1981-03-27 1982-10-02 Mitsubishi Electric Corp Semiconductor device
JPS57180150A (en) * 1981-04-30 1982-11-06 Nec Corp Semiconductor device
US4500905A (en) * 1981-09-30 1985-02-19 Tokyo Shibaura Denki Kabushiki Kaisha Stacked semiconductor device with sloping sides
JPS5887847A (en) * 1981-11-20 1983-05-25 Mitsubishi Electric Corp Semiconductor device
JPS5892238A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp Manufacture of three dimensional circuit element
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
JPS5990067U (en) * 1982-12-09 1984-06-18 トヨタ自動車株式会社 vehicle fuel tank
JPS60123049A (en) * 1983-12-07 1985-07-01 Agency Of Ind Science & Technol Semiconductor solid circuit element
JPH0336306B2 (en) * 1983-12-07 1991-05-31 Kogyo Gijutsuin
JPH0336307B2 (en) * 1984-02-02 1991-05-31 Kogyo Gijutsuin
JPS60161652A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of semiconductor microwave circuit element
JPH0542825B2 (en) * 1984-02-02 1993-06-29 Kogyo Gijutsuin
JPS60161654A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of semiconductor microwave circuit element
JPS60161653A (en) * 1984-02-02 1985-08-23 Agency Of Ind Science & Technol Manufacture of semiconductor microwave circuit element
JPS60180156A (en) * 1984-02-28 1985-09-13 Agency Of Ind Science & Technol Manufacture of semiconductor solid circuit element
JPH0337740B2 (en) * 1984-02-28 1991-06-06 Kogyo Gijutsuin
US4834809A (en) * 1984-11-19 1989-05-30 Sharp Kabushiki Kaisha Three dimensional semiconductor on insulator substrate
JPH0519988B2 (en) * 1985-08-09 1993-03-18 Kogyo Gijutsuin
JPS6235550A (en) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Manufacture of semiconductor stereoscopic circuit element
JPS6284554A (en) * 1985-10-08 1987-04-18 Agency Of Ind Science & Technol Semiconductor device
JPS6290922A (en) * 1986-07-11 1987-04-25 Hitachi Ltd Semiconductor device
JPS6477113A (en) * 1988-06-10 1989-03-23 Hitachi Ltd Semiconductor device
US6323528B1 (en) 1991-03-06 2001-11-27 Semiconductor Energy Laboratory Co,. Ltd. Semiconductor device
US6822261B2 (en) 1991-03-06 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5525536A (en) * 1991-12-26 1996-06-11 Rohm Co., Ltd. Method for producing SOI substrate and semiconductor device using the same

Also Published As

Publication number Publication date
JPS5820141B2 (en) 1983-04-21

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