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JPS5333587A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5333587A
JPS5333587A JP10779676A JP10779676A JPS5333587A JP S5333587 A JPS5333587 A JP S5333587A JP 10779676 A JP10779676 A JP 10779676A JP 10779676 A JP10779676 A JP 10779676A JP S5333587 A JPS5333587 A JP S5333587A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10779676A
Other languages
Japanese (ja)
Inventor
Isao Yoshida
Kiichiro Mukai
Shigeru Takahashi
Takeaki Okabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10779676A priority Critical patent/JPS5333587A/en
Publication of JPS5333587A publication Critical patent/JPS5333587A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To escape the moisture contained in resin to the outside and obtain MOSFETs of high reliability by providing void regions in a part of the drain electrodes of polyimide resin, PIQ resin insulating and isolating between drain and source.
COPYRIGHT: (C)1978,JPO&Japio
JP10779676A 1976-09-10 1976-09-10 Insulated gate type field effect transistor Pending JPS5333587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10779676A JPS5333587A (en) 1976-09-10 1976-09-10 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10779676A JPS5333587A (en) 1976-09-10 1976-09-10 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5333587A true JPS5333587A (en) 1978-03-29

Family

ID=14468240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10779676A Pending JPS5333587A (en) 1976-09-10 1976-09-10 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5333587A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141245A (en) * 1983-01-27 1984-08-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor logic integrated circuit
US5514911A (en) * 1992-11-24 1996-05-07 Hyundai Electronics Industries Co., Ltd. Highly integrated semiconductor device contact structure
WO2003025995A1 (en) * 2001-09-11 2003-03-27 Sharp Kabushiki Kaisha Semiconductor device and high-frequency amplifier comprising it

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141245A (en) * 1983-01-27 1984-08-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Semiconductor logic integrated circuit
US5514911A (en) * 1992-11-24 1996-05-07 Hyundai Electronics Industries Co., Ltd. Highly integrated semiconductor device contact structure
WO2003025995A1 (en) * 2001-09-11 2003-03-27 Sharp Kabushiki Kaisha Semiconductor device and high-frequency amplifier comprising it

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