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JPS5331971A - Forming method of metal oxide film or semiconductor oxide film - Google Patents

Forming method of metal oxide film or semiconductor oxide film

Info

Publication number
JPS5331971A
JPS5331971A JP10650376A JP10650376A JPS5331971A JP S5331971 A JPS5331971 A JP S5331971A JP 10650376 A JP10650376 A JP 10650376A JP 10650376 A JP10650376 A JP 10650376A JP S5331971 A JPS5331971 A JP S5331971A
Authority
JP
Japan
Prior art keywords
oxide film
forming method
metal oxide
semiconductor
semiconductor oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10650376A
Other languages
Japanese (ja)
Inventor
Katsutoshi Izumi
Masanobu Doken
Akira Ariyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10650376A priority Critical patent/JPS5331971A/en
Publication of JPS5331971A publication Critical patent/JPS5331971A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To make an oxide layer of a specified thickness and a desired shape in an arbitrary depth position by implating oxygen ions then heat-treating the substrate in an inert gas.
JP10650376A 1976-09-06 1976-09-06 Forming method of metal oxide film or semiconductor oxide film Pending JPS5331971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10650376A JPS5331971A (en) 1976-09-06 1976-09-06 Forming method of metal oxide film or semiconductor oxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10650376A JPS5331971A (en) 1976-09-06 1976-09-06 Forming method of metal oxide film or semiconductor oxide film

Publications (1)

Publication Number Publication Date
JPS5331971A true JPS5331971A (en) 1978-03-25

Family

ID=14435224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10650376A Pending JPS5331971A (en) 1976-09-06 1976-09-06 Forming method of metal oxide film or semiconductor oxide film

Country Status (1)

Country Link
JP (1) JPS5331971A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353074A (en) * 1976-10-25 1978-05-15 Toray Ind Inc Anticharging textile and filter cloth
JPS5583080A (en) * 1978-12-19 1980-06-23 Kanebo Ltd Cleaning device of copying machine
JPS5668110A (en) * 1979-11-06 1981-06-08 Kanebo Ltd Conductive composite fiber
JPS5685422A (en) * 1979-12-11 1981-07-11 Kanebo Ltd Electrically conductive composite fiber
JPS5724630A (en) * 1980-07-22 1982-02-09 Nippon Telegr & Teleph Corp <Ntt> Formation of compounds by ion injection
JPS5735329A (en) * 1980-08-11 1982-02-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS603126A (en) * 1983-06-21 1985-01-09 Nec Corp Formation of insulating layer
JPS60246655A (en) * 1984-05-21 1985-12-06 Mitsubishi Electric Corp Formation of wiring in semiconductor device
JPS61108710A (en) * 1984-11-02 1986-05-27 Mitsubishi Petrochem Co Ltd Antistatic flat yarn
JPS61163264A (en) * 1985-01-11 1986-07-23 Hitachi Ltd Formation of oxide film of platinum group metal
JPS63142655A (en) * 1986-11-26 1988-06-15 エイ・ティ・アンド・ティ・コーポレーション Manufacture of device containing buried sio2 layer
JPS63274620A (en) * 1987-04-30 1988-11-11 Sumitomo Electric Ind Ltd Preparation of superconductive material
US4997786A (en) * 1986-06-13 1991-03-05 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having buried insulation layer separated by ditches
US5080730A (en) * 1989-04-24 1992-01-14 Ibis Technology Corporation Implantation profile control with surface sputtering
US5196355A (en) * 1989-04-24 1993-03-23 Ibis Technology Corporation Simox materials through energy variation
US7601236B2 (en) 2003-11-28 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
US8048251B2 (en) * 2003-10-28 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing optical film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5353074A (en) * 1976-10-25 1978-05-15 Toray Ind Inc Anticharging textile and filter cloth
JPS5929283B2 (en) * 1976-10-25 1984-07-19 東レ株式会社 Antistatic furnace cloth
JPS5583080A (en) * 1978-12-19 1980-06-23 Kanebo Ltd Cleaning device of copying machine
JPS5640349B2 (en) * 1978-12-19 1981-09-19
JPS5749658B2 (en) * 1979-11-06 1982-10-23
JPS5668110A (en) * 1979-11-06 1981-06-08 Kanebo Ltd Conductive composite fiber
JPS5685422A (en) * 1979-12-11 1981-07-11 Kanebo Ltd Electrically conductive composite fiber
JPS5749659B2 (en) * 1979-12-11 1982-10-23
JPS5724630A (en) * 1980-07-22 1982-02-09 Nippon Telegr & Teleph Corp <Ntt> Formation of compounds by ion injection
JPS5735329A (en) * 1980-08-11 1982-02-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS603126A (en) * 1983-06-21 1985-01-09 Nec Corp Formation of insulating layer
JPS60246655A (en) * 1984-05-21 1985-12-06 Mitsubishi Electric Corp Formation of wiring in semiconductor device
JPS61108710A (en) * 1984-11-02 1986-05-27 Mitsubishi Petrochem Co Ltd Antistatic flat yarn
JPS61163264A (en) * 1985-01-11 1986-07-23 Hitachi Ltd Formation of oxide film of platinum group metal
US4997786A (en) * 1986-06-13 1991-03-05 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having buried insulation layer separated by ditches
JPS63142655A (en) * 1986-11-26 1988-06-15 エイ・ティ・アンド・ティ・コーポレーション Manufacture of device containing buried sio2 layer
JPS63274620A (en) * 1987-04-30 1988-11-11 Sumitomo Electric Ind Ltd Preparation of superconductive material
US5080730A (en) * 1989-04-24 1992-01-14 Ibis Technology Corporation Implantation profile control with surface sputtering
US5196355A (en) * 1989-04-24 1993-03-23 Ibis Technology Corporation Simox materials through energy variation
US8981641B2 (en) 2003-10-28 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing optical film
US10634944B2 (en) 2003-10-28 2020-04-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing optical film
US9927653B2 (en) 2003-10-28 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing optical film
US8048251B2 (en) * 2003-10-28 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing optical film
US8581491B2 (en) 2003-11-28 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
US9004970B2 (en) 2003-11-28 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
US9666752B2 (en) 2003-11-28 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
US7935969B2 (en) 2003-11-28 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
US10128402B2 (en) 2003-11-28 2018-11-13 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
US7601236B2 (en) 2003-11-28 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device

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