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JPS5328600A - Production of oxide single crystal for surface-wave and piezoelectric application - Google Patents

Production of oxide single crystal for surface-wave and piezoelectric application

Info

Publication number
JPS5328600A
JPS5328600A JP10392876A JP10392876A JPS5328600A JP S5328600 A JPS5328600 A JP S5328600A JP 10392876 A JP10392876 A JP 10392876A JP 10392876 A JP10392876 A JP 10392876A JP S5328600 A JPS5328600 A JP S5328600A
Authority
JP
Japan
Prior art keywords
single crystal
wave
production
oxide single
piezoelectric application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10392876A
Other languages
Japanese (ja)
Other versions
JPS5543431B2 (en
Inventor
Tsuguo Fukuda
Sadao Matsumura
Toshiharu Ito
Hitoshi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10392876A priority Critical patent/JPS5328600A/en
Priority to GB36138/77A priority patent/GB1533078A/en
Publication of JPS5328600A publication Critical patent/JPS5328600A/en
Publication of JPS5543431B2 publication Critical patent/JPS5543431B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

PURPOSE: To produce cheaply the title single crystal of high quality, by introducing the melt of lithium tantalate into a crucible made of Mo, and allowing a single crystal to grwo by the pulling-up(-down) method or pulling-aside method.
COPYRIGHT: (C)1978,JPO&Japio
JP10392876A 1976-08-30 1976-08-30 Production of oxide single crystal for surface-wave and piezoelectric application Granted JPS5328600A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10392876A JPS5328600A (en) 1976-08-30 1976-08-30 Production of oxide single crystal for surface-wave and piezoelectric application
GB36138/77A GB1533078A (en) 1976-08-30 1977-08-30 Method of manufacturing single crystal lithium tantalate adapted for application of surface waves and piezoelectricity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10392876A JPS5328600A (en) 1976-08-30 1976-08-30 Production of oxide single crystal for surface-wave and piezoelectric application

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP11802177A Division JPS5337200A (en) 1977-09-30 1977-09-30 Preparation of lithium tantalate single crystal

Publications (2)

Publication Number Publication Date
JPS5328600A true JPS5328600A (en) 1978-03-16
JPS5543431B2 JPS5543431B2 (en) 1980-11-06

Family

ID=14367082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10392876A Granted JPS5328600A (en) 1976-08-30 1976-08-30 Production of oxide single crystal for surface-wave and piezoelectric application

Country Status (2)

Country Link
JP (1) JPS5328600A (en)
GB (1) GB1533078A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113716533B (en) * 2021-08-04 2022-11-18 杭州赛聚科技有限公司 Preparation method of intelligent material

Also Published As

Publication number Publication date
JPS5543431B2 (en) 1980-11-06
GB1533078A (en) 1978-11-22

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