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JPS5317066A - Vapor phase epitaxial growth method - Google Patents

Vapor phase epitaxial growth method

Info

Publication number
JPS5317066A
JPS5317066A JP9117276A JP9117276A JPS5317066A JP S5317066 A JPS5317066 A JP S5317066A JP 9117276 A JP9117276 A JP 9117276A JP 9117276 A JP9117276 A JP 9117276A JP S5317066 A JPS5317066 A JP S5317066A
Authority
JP
Japan
Prior art keywords
epitaxial growth
vapor phase
growth method
phase epitaxial
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9117276A
Other languages
Japanese (ja)
Other versions
JPS5442582B2 (en
Inventor
Koichi Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9117276A priority Critical patent/JPS5317066A/en
Publication of JPS5317066A publication Critical patent/JPS5317066A/en
Publication of JPS5442582B2 publication Critical patent/JPS5442582B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To laminate InP layers and Ga1-yInyAs1-xPx epitaxial layers on InP wafers by epitaxial growth in a mutually lattice alignment relation without making a transition layer therebetween.
COPYRIGHT: (C)1978,JPO&Japio
JP9117276A 1976-07-30 1976-07-30 Vapor phase epitaxial growth method Granted JPS5317066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9117276A JPS5317066A (en) 1976-07-30 1976-07-30 Vapor phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9117276A JPS5317066A (en) 1976-07-30 1976-07-30 Vapor phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS5317066A true JPS5317066A (en) 1978-02-16
JPS5442582B2 JPS5442582B2 (en) 1979-12-14

Family

ID=14019038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9117276A Granted JPS5317066A (en) 1976-07-30 1976-07-30 Vapor phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5317066A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687316A (en) * 1979-12-17 1981-07-15 Matsushita Electric Ind Co Ltd Gaseous phase epitaxial growth device
JPS57198620A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
US4441383A (en) * 1978-06-12 1984-04-10 Shimano Industrial Company Limited Gear crank for a bicycle
US4507169A (en) * 1981-06-29 1985-03-26 Fujitsu Limited Method and apparatus for vapor phase growth of a semiconductor
US4645689A (en) * 1984-02-17 1987-02-24 At&T Bell Laboratories Deposition technique
JPS62137821A (en) * 1985-12-12 1987-06-20 Matsushita Electric Ind Co Ltd Vapor growth method for semiconductor
JPH0373517A (en) * 1989-08-14 1991-03-28 Nec Corp Semiconductor optical device
JPH03296289A (en) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp Semiconductor light element

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4441383A (en) * 1978-06-12 1984-04-10 Shimano Industrial Company Limited Gear crank for a bicycle
JPS5687316A (en) * 1979-12-17 1981-07-15 Matsushita Electric Ind Co Ltd Gaseous phase epitaxial growth device
JPS57198620A (en) * 1981-06-01 1982-12-06 Fujitsu Ltd Vapor growth of compound semiconductor
US4507169A (en) * 1981-06-29 1985-03-26 Fujitsu Limited Method and apparatus for vapor phase growth of a semiconductor
US4645689A (en) * 1984-02-17 1987-02-24 At&T Bell Laboratories Deposition technique
JPS62137821A (en) * 1985-12-12 1987-06-20 Matsushita Electric Ind Co Ltd Vapor growth method for semiconductor
JPH0373517A (en) * 1989-08-14 1991-03-28 Nec Corp Semiconductor optical device
JPH03296289A (en) * 1990-04-13 1991-12-26 Mitsubishi Electric Corp Semiconductor light element

Also Published As

Publication number Publication date
JPS5442582B2 (en) 1979-12-14

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