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JPS5315764A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5315764A
JPS5315764A JP8911176A JP8911176A JPS5315764A JP S5315764 A JPS5315764 A JP S5315764A JP 8911176 A JP8911176 A JP 8911176A JP 8911176 A JP8911176 A JP 8911176A JP S5315764 A JPS5315764 A JP S5315764A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
oxidation
pretreatment
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8911176A
Other languages
Japanese (ja)
Other versions
JPS5852329B2 (en
Inventor
Takaaki Aoshima
Hirobumi Shimizu
Akira Yoshinaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8911176A priority Critical patent/JPS5852329B2/en
Publication of JPS5315764A publication Critical patent/JPS5315764A/en
Publication of JPS5852329B2 publication Critical patent/JPS5852329B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To prevent the production of stacking faults owing to thermal oxidation by forming defect-free regions through high temperature treatment in a nonoxidative atmosphere as a pretreatment of surface oxidation then removing the minute defects remained on the surface.
COPYRIGHT: (C)1978,JPO&Japio
JP8911176A 1976-07-28 1976-07-28 Manufacturing method for semiconductor devices Expired JPS5852329B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8911176A JPS5852329B2 (en) 1976-07-28 1976-07-28 Manufacturing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8911176A JPS5852329B2 (en) 1976-07-28 1976-07-28 Manufacturing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5315764A true JPS5315764A (en) 1978-02-14
JPS5852329B2 JPS5852329B2 (en) 1983-11-22

Family

ID=13961770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8911176A Expired JPS5852329B2 (en) 1976-07-28 1976-07-28 Manufacturing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5852329B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030457A2 (en) * 1979-12-05 1981-06-17 VLSI Technology Research Association Method of manufacturing a silicon wafer with interior microdefects capable of gettering
JPS57159064A (en) * 1981-03-26 1982-10-01 Nec Home Electronics Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030457A2 (en) * 1979-12-05 1981-06-17 VLSI Technology Research Association Method of manufacturing a silicon wafer with interior microdefects capable of gettering
JPS57159064A (en) * 1981-03-26 1982-10-01 Nec Home Electronics Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5852329B2 (en) 1983-11-22

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