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JPS53145575A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS53145575A
JPS53145575A JP5976277A JP5976277A JPS53145575A JP S53145575 A JPS53145575 A JP S53145575A JP 5976277 A JP5976277 A JP 5976277A JP 5976277 A JP5976277 A JP 5976277A JP S53145575 A JPS53145575 A JP S53145575A
Authority
JP
Japan
Prior art keywords
plasma etching
etching method
margin
dispersion
eliminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5976277A
Other languages
Japanese (ja)
Other versions
JPS6053459B2 (en
Inventor
Koichiro Mizukami
Takehisa Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5976277A priority Critical patent/JPS6053459B2/en
Publication of JPS53145575A publication Critical patent/JPS53145575A/en
Publication of JPS6053459B2 publication Critical patent/JPS6053459B2/en
Expired legal-status Critical Current

Links

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To eliminate the reduction and dispersion in pattern size and increase the margin of IC design by using a mixture of carbon tetrafluoride containing normal oxygen and nitrogen as an etching gas at the time of plasma etching Si or Si compound through a photo mask made of organic resin.
COPYRIGHT: (C)1978,JPO&Japio
JP5976277A 1977-05-25 1977-05-25 Plasma etching method Expired JPS6053459B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5976277A JPS6053459B2 (en) 1977-05-25 1977-05-25 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5976277A JPS6053459B2 (en) 1977-05-25 1977-05-25 Plasma etching method

Publications (2)

Publication Number Publication Date
JPS53145575A true JPS53145575A (en) 1978-12-18
JPS6053459B2 JPS6053459B2 (en) 1985-11-26

Family

ID=13122595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5976277A Expired JPS6053459B2 (en) 1977-05-25 1977-05-25 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS6053459B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111222A (en) * 1980-01-31 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching method on silicon nitride film
JPS60192334A (en) * 1984-03-13 1985-09-30 Fuji Electric Corp Res & Dev Ltd Dry etching method
JPS62194623A (en) * 1986-02-06 1987-08-27 Oki Electric Ind Co Ltd Plasma etching method
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0525665Y2 (en) * 1985-09-30 1993-06-29

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111222A (en) * 1980-01-31 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching method on silicon nitride film
JPS60192334A (en) * 1984-03-13 1985-09-30 Fuji Electric Corp Res & Dev Ltd Dry etching method
JPS62194623A (en) * 1986-02-06 1987-08-27 Oki Electric Ind Co Ltd Plasma etching method
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method

Also Published As

Publication number Publication date
JPS6053459B2 (en) 1985-11-26

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