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JPS5313372A - Formation of electrode window - Google Patents

Formation of electrode window

Info

Publication number
JPS5313372A
JPS5313372A JP8792476A JP8792476A JPS5313372A JP S5313372 A JPS5313372 A JP S5313372A JP 8792476 A JP8792476 A JP 8792476A JP 8792476 A JP8792476 A JP 8792476A JP S5313372 A JPS5313372 A JP S5313372A
Authority
JP
Japan
Prior art keywords
layer
electrode window
formation
polyimido
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8792476A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Masao Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8792476A priority Critical patent/JPS5313372A/en
Publication of JPS5313372A publication Critical patent/JPS5313372A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE: The 1st polyimido layer is heat-precessed perfectly , and polyimide layers which are beneath the 2nd layer are heat-processed in approximately half degree; and then polyimido layres beneath the 2nd layer are etched by solution, or the 1st layer is plasma-processed or etched, thereby forming an electrode window having an accurate tapered part in a short time.
COPYRIGHT: (C)1978,JPO&Japio
JP8792476A 1976-07-22 1976-07-22 Formation of electrode window Pending JPS5313372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8792476A JPS5313372A (en) 1976-07-22 1976-07-22 Formation of electrode window

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8792476A JPS5313372A (en) 1976-07-22 1976-07-22 Formation of electrode window

Publications (1)

Publication Number Publication Date
JPS5313372A true JPS5313372A (en) 1978-02-06

Family

ID=13928458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8792476A Pending JPS5313372A (en) 1976-07-22 1976-07-22 Formation of electrode window

Country Status (1)

Country Link
JP (1) JPS5313372A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223347A (en) * 1982-06-21 1983-12-24 Nec Corp Manufacture of semiconductor device
US4523976A (en) * 1984-07-02 1985-06-18 Motorola, Inc. Method for forming semiconductor devices
US4560436A (en) * 1984-07-02 1985-12-24 Motorola, Inc. Process for etching tapered polyimide vias
JPS6248044A (en) * 1985-08-28 1987-03-02 Oki Electric Ind Co Ltd Multilayer interconnection forming method
JPS63120445A (en) * 1986-11-10 1988-05-24 Nec Corp Manufacture of semiconductor device
JPH04155851A (en) * 1990-10-19 1992-05-28 Nec Corp Manufacture of semiconductor device
JPH04199849A (en) * 1990-11-29 1992-07-21 Nec Corp Manufacture of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49121483A (en) * 1973-03-20 1974-11-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49121483A (en) * 1973-03-20 1974-11-20

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223347A (en) * 1982-06-21 1983-12-24 Nec Corp Manufacture of semiconductor device
US4523976A (en) * 1984-07-02 1985-06-18 Motorola, Inc. Method for forming semiconductor devices
US4560436A (en) * 1984-07-02 1985-12-24 Motorola, Inc. Process for etching tapered polyimide vias
JPS6248044A (en) * 1985-08-28 1987-03-02 Oki Electric Ind Co Ltd Multilayer interconnection forming method
JPS63120445A (en) * 1986-11-10 1988-05-24 Nec Corp Manufacture of semiconductor device
JPH04155851A (en) * 1990-10-19 1992-05-28 Nec Corp Manufacture of semiconductor device
JPH04199849A (en) * 1990-11-29 1992-07-21 Nec Corp Manufacture of semiconductor device

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