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JPS53110460A - Electrode of compound semiconductor - Google Patents

Electrode of compound semiconductor

Info

Publication number
JPS53110460A
JPS53110460A JP2489777A JP2489777A JPS53110460A JP S53110460 A JPS53110460 A JP S53110460A JP 2489777 A JP2489777 A JP 2489777A JP 2489777 A JP2489777 A JP 2489777A JP S53110460 A JPS53110460 A JP S53110460A
Authority
JP
Japan
Prior art keywords
electrode
compound semiconductor
contactness
ohmic
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2489777A
Other languages
Japanese (ja)
Inventor
Noburo Yasuda
Akinobu Kasami
Yoshiyasu Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2489777A priority Critical patent/JPS53110460A/en
Publication of JPS53110460A publication Critical patent/JPS53110460A/en
Pending legal-status Critical Current

Links

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make better the junction and the ohmic contactness, by forming the electrode of three layer constitution consisting of Au-Be alloy, high melting point metallic layer such as Mo, and gold on the p type compound semiconductor.
COPYRIGHT: (C)1978,JPO&Japio
JP2489777A 1977-03-09 1977-03-09 Electrode of compound semiconductor Pending JPS53110460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2489777A JPS53110460A (en) 1977-03-09 1977-03-09 Electrode of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2489777A JPS53110460A (en) 1977-03-09 1977-03-09 Electrode of compound semiconductor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57190798A Division JPS5890773A (en) 1982-11-01 1982-11-01 Compound semiconductor electrode

Publications (1)

Publication Number Publication Date
JPS53110460A true JPS53110460A (en) 1978-09-27

Family

ID=12150965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2489777A Pending JPS53110460A (en) 1977-03-09 1977-03-09 Electrode of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS53110460A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144559A (en) * 1980-04-10 1981-11-10 Toshiba Corp Compound semiconductor element
US4447825A (en) * 1980-02-28 1984-05-08 Tokyo Shibaura Denki Kabushiki Kaisha III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer
JPS6144492A (en) * 1985-07-22 1986-03-04 Hitachi Ltd Semiconductor device
US4695869A (en) * 1983-05-31 1987-09-22 Kabushiki Kaisha Toshiba GAAS semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826669A (en) * 1971-08-10 1973-04-07
JPS497628A (en) * 1972-05-25 1974-01-23
JPS4929068A (en) * 1972-07-12 1974-03-15
JPS4998190A (en) * 1973-01-19 1974-09-17

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826669A (en) * 1971-08-10 1973-04-07
JPS497628A (en) * 1972-05-25 1974-01-23
JPS4929068A (en) * 1972-07-12 1974-03-15
JPS4998190A (en) * 1973-01-19 1974-09-17

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4447825A (en) * 1980-02-28 1984-05-08 Tokyo Shibaura Denki Kabushiki Kaisha III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer
JPS56144559A (en) * 1980-04-10 1981-11-10 Toshiba Corp Compound semiconductor element
US4695869A (en) * 1983-05-31 1987-09-22 Kabushiki Kaisha Toshiba GAAS semiconductor device
JPS6144492A (en) * 1985-07-22 1986-03-04 Hitachi Ltd Semiconductor device

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