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JPS5310265A - Impurity diffusion method - Google Patents

Impurity diffusion method

Info

Publication number
JPS5310265A
JPS5310265A JP8473676A JP8473676A JPS5310265A JP S5310265 A JPS5310265 A JP S5310265A JP 8473676 A JP8473676 A JP 8473676A JP 8473676 A JP8473676 A JP 8473676A JP S5310265 A JPS5310265 A JP S5310265A
Authority
JP
Japan
Prior art keywords
impurity diffusion
impurity
diffusion method
holes
withinthe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8473676A
Other languages
Japanese (ja)
Inventor
Kazumi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8473676A priority Critical patent/JPS5310265A/en
Publication of JPS5310265A publication Critical patent/JPS5310265A/en
Pending legal-status Critical Current

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  • Element Separation (AREA)

Abstract

PURPOSE: To mutually overlap diffused regions and widen junction areas in relation to the same surface area by providing holes adjoined withinthe distance of less than about 1.8 times the vertical diffusion depth of an impurity in forming holes o of the film which has a mask effect for the impurity provided on a semiconductor substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP8473676A 1976-07-15 1976-07-15 Impurity diffusion method Pending JPS5310265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8473676A JPS5310265A (en) 1976-07-15 1976-07-15 Impurity diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8473676A JPS5310265A (en) 1976-07-15 1976-07-15 Impurity diffusion method

Publications (1)

Publication Number Publication Date
JPS5310265A true JPS5310265A (en) 1978-01-30

Family

ID=13838970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8473676A Pending JPS5310265A (en) 1976-07-15 1976-07-15 Impurity diffusion method

Country Status (1)

Country Link
JP (1) JPS5310265A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121222A (en) * 1980-12-09 1982-07-28 Philips Nv Method of producing semiconductor device
JPS57128979A (en) * 1981-02-02 1982-08-10 Jido Keisoku Gijutsu Kenkiyuukumiai Manufacture of junction type field-effect transistor
JPS5848968A (en) * 1981-09-18 1983-03-23 Fujitsu Ltd Manufacture of semicoductor device
CN1128054C (en) * 1995-02-16 2003-11-19 株式会社吉野工业所 Blown container and blow mold
KR20200024240A (en) * 2017-06-28 2020-03-06 교라꾸 가부시끼가이샤 Laminated peeling container

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121222A (en) * 1980-12-09 1982-07-28 Philips Nv Method of producing semiconductor device
JPS6262457B2 (en) * 1980-12-09 1987-12-26 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS57128979A (en) * 1981-02-02 1982-08-10 Jido Keisoku Gijutsu Kenkiyuukumiai Manufacture of junction type field-effect transistor
JPS5848968A (en) * 1981-09-18 1983-03-23 Fujitsu Ltd Manufacture of semicoductor device
CN1128054C (en) * 1995-02-16 2003-11-19 株式会社吉野工业所 Blown container and blow mold
KR20200024240A (en) * 2017-06-28 2020-03-06 교라꾸 가부시끼가이샤 Laminated peeling container

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