Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP15812875ApriorityCriticalpatent/JPS5283061A/en
Publication of JPS5283061ApublicationCriticalpatent/JPS5283061A/en
PURPOSE: To make narrow electrode window opening by forming an SiO2 film on a substrate with an Si3N4 film as a mask an utilizing the entry of the SiO2 under the Si3N4 film.
COPYRIGHT: (C)1977,JPO&Japio
JP15812875A1975-12-301975-12-30Production of semiconductor device
PendingJPS5283061A
(en)