[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5245273A - Method for production of semiconductor device - Google Patents

Method for production of semiconductor device

Info

Publication number
JPS5245273A
JPS5245273A JP12070375A JP12070375A JPS5245273A JP S5245273 A JPS5245273 A JP S5245273A JP 12070375 A JP12070375 A JP 12070375A JP 12070375 A JP12070375 A JP 12070375A JP S5245273 A JPS5245273 A JP S5245273A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
sin
sio
successful
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12070375A
Other languages
Japanese (ja)
Inventor
Tadao Kachi
Hideo Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12070375A priority Critical patent/JPS5245273A/en
Publication of JPS5245273A publication Critical patent/JPS5245273A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To make a successful, crystallized epitaxial layer by the selective epitaxial growth without using the SiO2 and SiN4.
COPYRIGHT: (C)1977,JPO&Japio
JP12070375A 1975-10-08 1975-10-08 Method for production of semiconductor device Pending JPS5245273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12070375A JPS5245273A (en) 1975-10-08 1975-10-08 Method for production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12070375A JPS5245273A (en) 1975-10-08 1975-10-08 Method for production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5245273A true JPS5245273A (en) 1977-04-09

Family

ID=14792883

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12070375A Pending JPS5245273A (en) 1975-10-08 1975-10-08 Method for production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5245273A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728741A (en) * 1980-07-21 1982-02-16 Toppan Printing Co Ltd Extruding tube vessel and its manufacture
JPS5755857A (en) * 1980-09-12 1982-04-03 Lion Corp Extruding tube
JPS5874529U (en) * 1981-11-12 1983-05-20 サンスタ−株式会社 Laminated material for extruded tubes
JPS611028A (en) * 1984-05-18 1986-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPS611027A (en) * 1984-05-18 1986-01-07 Fujitsu Ltd Manufacture of semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5728741A (en) * 1980-07-21 1982-02-16 Toppan Printing Co Ltd Extruding tube vessel and its manufacture
JPS6359865B2 (en) * 1980-07-21 1988-11-21
JPS5755857A (en) * 1980-09-12 1982-04-03 Lion Corp Extruding tube
JPS6044151B2 (en) * 1980-09-12 1985-10-02 ライオン株式会社 extruded tube
JPS5874529U (en) * 1981-11-12 1983-05-20 サンスタ−株式会社 Laminated material for extruded tubes
JPS6220275Y2 (en) * 1981-11-12 1987-05-23
JPS611028A (en) * 1984-05-18 1986-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPS611027A (en) * 1984-05-18 1986-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPH037145B2 (en) * 1984-05-18 1991-01-31 Fujitsu Ltd
JPH037146B2 (en) * 1984-05-18 1991-01-31 Fujitsu Ltd

Similar Documents

Publication Publication Date Title
JPS5245273A (en) Method for production of semiconductor device
JPS5383467A (en) Production of semiconductor device
JPS5279656A (en) Production of semiconductor device
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5211860A (en) Liquid phase epitaxial device
JPS51147955A (en) Method of growing semiconductor
JPS51146194A (en) Diode device fabrication method
JPS52119192A (en) Semiconductor
JPS5221780A (en) Semiconductor unit producing system
JPS5366163A (en) Selective growth method of semiconductor buried layer
JPS5216972A (en) Epitachisial growing method of semic-conductor of iii-v family chemica l compound
JPS5217768A (en) Production method of semi-conductor device
JPS5231680A (en) Production method of semiconductor device
JPS5218167A (en) Production method of semiconductor device
JPS52179A (en) Method of fabricating semiconductor
JPS5326663A (en) Manu facture of semiconductor device
JPS5436192A (en) Manufacture for semiconductor
JPS5422157A (en) Formation method of selective impurity diffusion region into iii-v group compound semiconductor
JPS5244193A (en) Epitaxial growth method
JPS5273673A (en) Production of semiconductor device
JPS548457A (en) Impurity introducing method to poly-crystal silicon
JPS5348457A (en) Production of semiconductor element
JPS51121271A (en) Manufacturing method for semiconductor devices
JPS5211782A (en) Method of manufacturing semiconductor device
JPS51123559A (en) Production method of aerial phase growth wafer