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JPS5244186A - Semiconductor intergrated circuit device - Google Patents

Semiconductor intergrated circuit device

Info

Publication number
JPS5244186A
JPS5244186A JP11974775A JP11974775A JPS5244186A JP S5244186 A JPS5244186 A JP S5244186A JP 11974775 A JP11974775 A JP 11974775A JP 11974775 A JP11974775 A JP 11974775A JP S5244186 A JPS5244186 A JP S5244186A
Authority
JP
Japan
Prior art keywords
circuit device
intergrated circuit
semiconductor intergrated
semiconductor
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11974775A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Takanori Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11974775A priority Critical patent/JPS5244186A/en
Publication of JPS5244186A publication Critical patent/JPS5244186A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: A vertical transistor is made to a lateral type by the use of V-shaped grooves, whereby the scale of integration is increased.
COPYRIGHT: (C)1977,JPO&Japio
JP11974775A 1975-10-06 1975-10-06 Semiconductor intergrated circuit device Pending JPS5244186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11974775A JPS5244186A (en) 1975-10-06 1975-10-06 Semiconductor intergrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11974775A JPS5244186A (en) 1975-10-06 1975-10-06 Semiconductor intergrated circuit device

Publications (1)

Publication Number Publication Date
JPS5244186A true JPS5244186A (en) 1977-04-06

Family

ID=14769134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11974775A Pending JPS5244186A (en) 1975-10-06 1975-10-06 Semiconductor intergrated circuit device

Country Status (1)

Country Link
JP (1) JPS5244186A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157569A (en) * 1981-03-02 1982-09-29 Rockwell International Corp N-p-n lateral transistor array of submicron size and method of forming same
JPS57157568A (en) * 1981-03-02 1982-09-29 Rockwell International Corp N-p-n lateral transistor
JPS57170546A (en) * 1981-03-30 1982-10-20 Ibm Semiconductor element
JPS584945A (en) * 1981-06-25 1983-01-12 ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン Method and device for producing constant voltage circuit
JPS5810866A (en) * 1981-07-01 1983-01-21 ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン Pnp lateral transistor and method of producing same
JPS60170251A (en) * 1984-02-14 1985-09-03 Toshiba Corp Manufacture of semiconductor device
JPS60170257A (en) * 1984-02-15 1985-09-03 Hitachi Ltd Semiconductor device
JPS63124565A (en) * 1986-11-14 1988-05-28 Fujitsu Ltd Semiconductor integrated circuit device and manufacture thereof
JPS63164366A (en) * 1986-12-18 1988-07-07 ドイチェ・アイテイーテイー・インダストリーズ・ゲゼルシャフト・ミト・ベシュレンクタ・ハフツンク Collector contact of integrated bipolar transistor
JPH02283030A (en) * 1989-04-25 1990-11-20 Fuji Electric Co Ltd Semiconductor device provided with bipolar transistor
US5019523A (en) * 1979-06-18 1991-05-28 Hitachi, Ltd. Process for making polysilicon contacts to IC mesas

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019523A (en) * 1979-06-18 1991-05-28 Hitachi, Ltd. Process for making polysilicon contacts to IC mesas
JPS57157568A (en) * 1981-03-02 1982-09-29 Rockwell International Corp N-p-n lateral transistor
JPS57157569A (en) * 1981-03-02 1982-09-29 Rockwell International Corp N-p-n lateral transistor array of submicron size and method of forming same
JPH0253944B2 (en) * 1981-03-30 1990-11-20 Intaanashonaru Bijinesu Mashiinzu Corp
JPS57170546A (en) * 1981-03-30 1982-10-20 Ibm Semiconductor element
JPS584945A (en) * 1981-06-25 1983-01-12 ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン Method and device for producing constant voltage circuit
JPS5810866A (en) * 1981-07-01 1983-01-21 ロツクウエル・インタ−ナシヨナル・コ−ポレ−シヨン Pnp lateral transistor and method of producing same
JPS60170251A (en) * 1984-02-14 1985-09-03 Toshiba Corp Manufacture of semiconductor device
JP2538857B2 (en) * 1984-02-14 1996-10-02 株式会社東芝 Method for manufacturing semiconductor device
JPS60170257A (en) * 1984-02-15 1985-09-03 Hitachi Ltd Semiconductor device
JPS63124565A (en) * 1986-11-14 1988-05-28 Fujitsu Ltd Semiconductor integrated circuit device and manufacture thereof
JPS63164366A (en) * 1986-12-18 1988-07-07 ドイチェ・アイテイーテイー・インダストリーズ・ゲゼルシャフト・ミト・ベシュレンクタ・ハフツンク Collector contact of integrated bipolar transistor
JPH02283030A (en) * 1989-04-25 1990-11-20 Fuji Electric Co Ltd Semiconductor device provided with bipolar transistor

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