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JPS5244716B2 - - Google Patents

Info

Publication number
JPS5244716B2
JPS5244716B2 JP12060673A JP12060673A JPS5244716B2 JP S5244716 B2 JPS5244716 B2 JP S5244716B2 JP 12060673 A JP12060673 A JP 12060673A JP 12060673 A JP12060673 A JP 12060673A JP S5244716 B2 JPS5244716 B2 JP S5244716B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12060673A
Other versions
JPS4977592A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4977592A publication Critical patent/JPS4977592A/ja
Publication of JPS5244716B2 publication Critical patent/JPS5244716B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/113Nitrides of boron or aluminum or gallium
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/956Making multiple wavelength emissive device

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP12060673A 1972-10-27 1973-10-26 Expired JPS5244716B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30146872A 1972-10-27 1972-10-27

Publications (2)

Publication Number Publication Date
JPS4977592A JPS4977592A (ja) 1974-07-26
JPS5244716B2 true JPS5244716B2 (ja) 1977-11-10

Family

ID=23163508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12060673A Expired JPS5244716B2 (ja) 1972-10-27 1973-10-26

Country Status (7)

Country Link
US (1) US3783353A (ja)
JP (1) JPS5244716B2 (ja)
CA (1) CA1008550A (ja)
DE (1) DE2352697A1 (ja)
FR (1) FR2204935B1 (ja)
GB (1) GB1448285A (ja)
IT (1) IT995575B (ja)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
US4011575A (en) * 1974-07-26 1977-03-08 Litton Systems, Inc. Light emitting diode array having a plurality of conductive paths for each light emitting diode
US3947840A (en) * 1974-08-16 1976-03-30 Monsanto Company Integrated semiconductor light-emitting display array
US4062035A (en) * 1975-02-05 1977-12-06 Siemens Aktiengesellschaft Luminescent diode
DE2738329A1 (de) * 1976-09-06 1978-03-09 Philips Nv Elektrolumineszierende galliumnitridhalbleiteranordnung und verfahren zu deren herstellung
SU773795A1 (ru) * 1977-04-01 1980-10-23 Предприятие П/Я А-1172 Светоизлучающий прибор
JPS575083A (en) * 1980-06-13 1982-01-11 Tokyo Shibaura Electric Co Display unit
FR2514566A1 (fr) * 1982-02-02 1983-04-15 Bagratishvili Givi Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif
US4577207A (en) * 1982-12-30 1986-03-18 At&T Bell Laboratories Dual wavelength optical source
US4780643A (en) * 1983-03-30 1988-10-25 Minnesota Mining And Manufacturing Company Semiconductor electrodes having multicolor luminescence
US4857801A (en) * 1983-04-18 1989-08-15 Litton Systems Canada Limited Dense LED matrix for high resolution full color video
US4559116A (en) * 1984-07-09 1985-12-17 Minnesota Mining And Manufacturing Company Process of etching semiconductor electrodes
JPS6140081A (ja) * 1984-07-31 1986-02-26 Sharp Corp 光半導体装置
US5094970A (en) * 1988-11-07 1992-03-10 Mitsubishi Denki Kabushiki Kaisha Method of making a light emitting diode array
DE3842394A1 (de) * 1988-12-16 1990-06-21 Total En Dev & Messerschmitt B Mehrschichtige fluoreszenzvorrichtung
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US6358631B1 (en) 1994-12-13 2002-03-19 The Trustees Of Princeton University Mixed vapor deposited films for electroluminescent devices
US5703436A (en) 1994-12-13 1997-12-30 The Trustees Of Princeton University Transparent contacts for organic devices
US5707745A (en) * 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
US6548956B2 (en) 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
US6057871A (en) * 1998-07-10 2000-05-02 Litton Systems, Inc. Laser marking system and associated microlaser apparatus
JP2001217456A (ja) * 2000-02-03 2001-08-10 Sharp Corp 窒化ガリウム系化合物半導体発光素子
US6525464B1 (en) * 2000-09-08 2003-02-25 Unity Opto Technology Co., Ltd. Stacked light-mixing LED
EP1473771A1 (en) * 2003-04-14 2004-11-03 Epitech Corporation, Ltd. Color mixing light emitting diode
WO2006049533A2 (en) * 2004-11-05 2006-05-11 Mikhail Evgenjevich Givargizov Radiating devices and method for the production thereof
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
US8493071B1 (en) * 2009-10-09 2013-07-23 Xilinx, Inc. Shorted test structure
US8802454B1 (en) 2011-12-20 2014-08-12 Xilinx, Inc. Methods of manufacturing a semiconductor structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
US3683240A (en) * 1971-07-22 1972-08-08 Rca Corp ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN
US3727115A (en) * 1972-03-24 1973-04-10 Ibm Semiconductor electroluminescent diode comprising a ternary compound of gallium, thallium, and phosphorous

Also Published As

Publication number Publication date
CA1008550A (en) 1977-04-12
FR2204935B1 (ja) 1978-02-17
JPS4977592A (ja) 1974-07-26
US3783353A (en) 1974-01-01
GB1448285A (en) 1976-09-02
DE2352697A1 (de) 1974-05-22
IT995575B (it) 1975-11-20
FR2204935A1 (ja) 1974-05-24

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