[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5236473A - Dye bonding method - Google Patents

Dye bonding method

Info

Publication number
JPS5236473A
JPS5236473A JP11235575A JP11235575A JPS5236473A JP S5236473 A JPS5236473 A JP S5236473A JP 11235575 A JP11235575 A JP 11235575A JP 11235575 A JP11235575 A JP 11235575A JP S5236473 A JPS5236473 A JP S5236473A
Authority
JP
Japan
Prior art keywords
bonding method
silicon
stem
dye bonding
dye
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11235575A
Other languages
Japanese (ja)
Inventor
Koichiro Kishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11235575A priority Critical patent/JPS5236473A/en
Publication of JPS5236473A publication Critical patent/JPS5236473A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To contact the metal coating of a stem with the silicon pellet having a gold-silicon eutectic layer in which silicon is diffused down to the semiconductor substrate surface, and to then fix them to each other while applying heat, thereby preventing the coming-off of the stem and metal film.
COPYRIGHT: (C)1977,JPO&Japio
JP11235575A 1975-09-17 1975-09-17 Dye bonding method Pending JPS5236473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11235575A JPS5236473A (en) 1975-09-17 1975-09-17 Dye bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11235575A JPS5236473A (en) 1975-09-17 1975-09-17 Dye bonding method

Publications (1)

Publication Number Publication Date
JPS5236473A true JPS5236473A (en) 1977-03-19

Family

ID=14584609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11235575A Pending JPS5236473A (en) 1975-09-17 1975-09-17 Dye bonding method

Country Status (1)

Country Link
JP (1) JPS5236473A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH024631A (en) * 1988-06-20 1990-01-09 Toyo Seikan Kaisha Ltd Plastic container for aseptic filling
JPH0472131A (en) * 1989-08-24 1992-03-06 Plasticon Patents Sa Plastic container

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH024631A (en) * 1988-06-20 1990-01-09 Toyo Seikan Kaisha Ltd Plastic container for aseptic filling
JPH0472131A (en) * 1989-08-24 1992-03-06 Plasticon Patents Sa Plastic container

Similar Documents

Publication Publication Date Title
JPS5244173A (en) Method of flat etching of silicon substrate
JPS5236473A (en) Dye bonding method
JPS5249772A (en) Process for production of semiconductor device
JPS5212575A (en) Production method of semi-conductor device
JPS5420671A (en) Production of semiconductor devices
JPS5261960A (en) Production of semiconductor device
JPS51111056A (en) Diffused layer forming method
JPS5518021A (en) Method of die bonding of semiconductor pellet
JPS5380184A (en) Manufacture of semiconductor device
JPS522165A (en) Method of thermally diffusing selectively aluminum of semiconductor su bstrate
JPS5219968A (en) Semiconductor ic manufacturig process
JPS5243367A (en) Resin seal type semiconductor device
JPS5244175A (en) Method of flat etching of silicon substrate
JPS5250167A (en) Semiconductor device
JPS5258363A (en) Formation of semiconductor layer
JPS5441673A (en) Semiconductor device and its manufacture
JPS5367377A (en) Manufacture of semiconductor device
JPS5216169A (en) Semiconductor device
JPS531468A (en) Formation of semiconductor electrode
JPS5428566A (en) Manufacture of semiconductor device
JPS5271980A (en) Formation of metal wiring
JPS5240084A (en) Process for production of semiconductor devices
JPS5232679A (en) Semiconductor device and its manufacturing process
JPS51135469A (en) Glass passivation semi-conductor unit
JPS5422164A (en) Semiconductor device