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JPS5232683A - Manufacturing process of semiconductor device - Google Patents

Manufacturing process of semiconductor device

Info

Publication number
JPS5232683A
JPS5232683A JP10878475A JP10878475A JPS5232683A JP S5232683 A JPS5232683 A JP S5232683A JP 10878475 A JP10878475 A JP 10878475A JP 10878475 A JP10878475 A JP 10878475A JP S5232683 A JPS5232683 A JP S5232683A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacturing process
gate
insulator
manufactured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10878475A
Other languages
Japanese (ja)
Other versions
JPS587070B2 (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10878475A priority Critical patent/JPS587070B2/en
Publication of JPS5232683A publication Critical patent/JPS5232683A/en
Publication of JPS587070B2 publication Critical patent/JPS587070B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: An insulator is provided at the gate lower part of semiconductor device by ion injection, etc. in order to secure insulation between gate and substrate. In this way, an easy-to-integrate semiconductor device can be manufactured with fine uniformity.
COPYRIGHT: (C)1977,JPO&Japio
JP10878475A 1975-09-08 1975-09-08 hand tai souchi no seizou houhou Expired JPS587070B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10878475A JPS587070B2 (en) 1975-09-08 1975-09-08 hand tai souchi no seizou houhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10878475A JPS587070B2 (en) 1975-09-08 1975-09-08 hand tai souchi no seizou houhou

Publications (2)

Publication Number Publication Date
JPS5232683A true JPS5232683A (en) 1977-03-12
JPS587070B2 JPS587070B2 (en) 1983-02-08

Family

ID=14493381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10878475A Expired JPS587070B2 (en) 1975-09-08 1975-09-08 hand tai souchi no seizou houhou

Country Status (1)

Country Link
JP (1) JPS587070B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676575A (en) * 1979-11-26 1981-06-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of junction type field effect semiconductor device
US8535958B2 (en) * 2008-07-17 2013-09-17 Advanced Optoelectronic Technology, Inc. Method for fabricating light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676575A (en) * 1979-11-26 1981-06-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of junction type field effect semiconductor device
US8535958B2 (en) * 2008-07-17 2013-09-17 Advanced Optoelectronic Technology, Inc. Method for fabricating light emitting diode

Also Published As

Publication number Publication date
JPS587070B2 (en) 1983-02-08

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