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JPS5224165A - Process for growth of ribbon crystal by horizontal drawing - Google Patents

Process for growth of ribbon crystal by horizontal drawing

Info

Publication number
JPS5224165A
JPS5224165A JP10011275A JP10011275A JPS5224165A JP S5224165 A JPS5224165 A JP S5224165A JP 10011275 A JP10011275 A JP 10011275A JP 10011275 A JP10011275 A JP 10011275A JP S5224165 A JPS5224165 A JP S5224165A
Authority
JP
Japan
Prior art keywords
growth
horizontal drawing
ribbon crystal
ribbon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10011275A
Other languages
Japanese (ja)
Other versions
JPS5720276B2 (en
Inventor
Hiroshi Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOUYOU SHIRIKON KK
TOYO SHIRIKON KK
Mitsubishi Materials Silicon Corp
Original Assignee
TOUYOU SHIRIKON KK
TOYO SHIRIKON KK
Toyo Silicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOUYOU SHIRIKON KK, TOYO SHIRIKON KK, Toyo Silicon Co Ltd filed Critical TOUYOU SHIRIKON KK
Priority to JP10011275A priority Critical patent/JPS5224165A/en
Priority to DE2633961A priority patent/DE2633961C2/en
Publication of JPS5224165A publication Critical patent/JPS5224165A/en
Priority to US05/863,480 priority patent/US4329195A/en
Publication of JPS5720276B2 publication Critical patent/JPS5720276B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: Ribbon-shaped single crystal of a large width, small thickness and good quality is produced stably at high speeds.
COPYRIGHT: (C)1977,JPO&Japio
JP10011275A 1975-07-28 1975-08-20 Process for growth of ribbon crystal by horizontal drawing Granted JPS5224165A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10011275A JPS5224165A (en) 1975-08-20 1975-08-20 Process for growth of ribbon crystal by horizontal drawing
DE2633961A DE2633961C2 (en) 1975-07-28 1976-07-28 Method of pulling a thin ribbon of single crystal semiconductor
US05/863,480 US4329195A (en) 1975-07-28 1977-12-22 Lateral pulling growth of crystal ribbons

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10011275A JPS5224165A (en) 1975-08-20 1975-08-20 Process for growth of ribbon crystal by horizontal drawing

Publications (2)

Publication Number Publication Date
JPS5224165A true JPS5224165A (en) 1977-02-23
JPS5720276B2 JPS5720276B2 (en) 1982-04-27

Family

ID=14265275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10011275A Granted JPS5224165A (en) 1975-07-28 1975-08-20 Process for growth of ribbon crystal by horizontal drawing

Country Status (1)

Country Link
JP (1) JPS5224165A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013531876A (en) * 2010-05-06 2013-08-08 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド Removal of sheet from melt surface using elasticity and buoyancy

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62102467U (en) * 1985-12-19 1987-06-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013531876A (en) * 2010-05-06 2013-08-08 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド Removal of sheet from melt surface using elasticity and buoyancy

Also Published As

Publication number Publication date
JPS5720276B2 (en) 1982-04-27

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