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JPS52100978A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52100978A
JPS52100978A JP1815176A JP1815176A JPS52100978A JP S52100978 A JPS52100978 A JP S52100978A JP 1815176 A JP1815176 A JP 1815176A JP 1815176 A JP1815176 A JP 1815176A JP S52100978 A JPS52100978 A JP S52100978A
Authority
JP
Japan
Prior art keywords
region
base
defining
semiconductor device
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1815176A
Other languages
Japanese (ja)
Inventor
Yoshihiko Mizushima
Akio Tamama
Masahiro Sakagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1815176A priority Critical patent/JPS52100978A/en
Publication of JPS52100978A publication Critical patent/JPS52100978A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To increase current amplifying rate and withstanding voltage and operating speed by defining impurity concentration of semiconductor layer which forms active region and embedded region which will become base and by defining thickness of collector-emitter region and base region which are located at upper and lower regions of the base region.
COPYRIGHT: (C)1977,JPO&Japio
JP1815176A 1976-02-20 1976-02-20 Semiconductor device Pending JPS52100978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1815176A JPS52100978A (en) 1976-02-20 1976-02-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1815176A JPS52100978A (en) 1976-02-20 1976-02-20 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52100978A true JPS52100978A (en) 1977-08-24

Family

ID=11963601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1815176A Pending JPS52100978A (en) 1976-02-20 1976-02-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52100978A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245708A (en) * 1986-04-17 1987-10-27 Sanyo Electric Co Ltd Current mirror circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991191A (en) * 1972-12-29 1974-08-30
JPS50144384A (en) * 1974-05-09 1975-11-20

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991191A (en) * 1972-12-29 1974-08-30
JPS50144384A (en) * 1974-05-09 1975-11-20

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245708A (en) * 1986-04-17 1987-10-27 Sanyo Electric Co Ltd Current mirror circuit
JPH0528910B2 (en) * 1986-04-17 1993-04-27 Sanyo Electric Co

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