JPS513824A - - Google Patents

Info

Publication number: JPS513824A
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP50059783A

Other languages

Japanese (ja)

Other versions

JPS5428252B2 (en

Inventor

Baashun Hoosuto

Gushuentsunaa Jooji

Oo Haukusu Berunaa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

International Business Machines Corp

Original Assignee

International Business Machines Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1974-06-28

Filing date

1975-05-21

Publication date

1976-01-13

1975-05-21 Application filed by International Business Machines Corp filed Critical International Business Machines Corp

1976-01-13 Publication of JPS513824A publication Critical patent/JPS513824A/ja

1979-09-14 Publication of JPS5428252B2 publication Critical patent/JPS5428252B2/ja

Status Expired legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H10D84/813—Combinations of field-effect devices and capacitor only

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Dram (AREA)
Semiconductor Memories (AREA)

JP5978375A 1974-06-28 1975-05-21 Expired JPS5428252B2 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2431079A DE2431079C3 (en)	1974-06-28	1974-06-28	Dynamic semiconductor memory with two-transistor memory elements

Publications (2)

Publication Number	Publication Date
JPS513824A true JPS513824A (en)	1976-01-13
JPS5428252B2 JPS5428252B2 (en)	1979-09-14

Family

ID=5919184

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP5978375A Expired JPS5428252B2 (en)	1974-06-28	1975-05-21

Country Status (6)

Country	Link
JP (1)	JPS5428252B2 (en)
CH (1)	CH581885A5 (en)
DE (1)	DE2431079C3 (en)
FR (1)	FR2276659A1 (en)
GB (1)	GB1502334A (en)
IT (1)	IT1038100B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS52119876A (en) *	1976-03-31	1977-10-07	Ibm	Condenser memory
JPS52154314A (en) *	1976-06-17	1977-12-22	Ibm	Twooelement memory cell
JPS5513780A (en) *	1978-05-09	1980-01-30	Dynachem Corp	Fluoran coupler containing phototropic photosensitive composition

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5853512B2 (en) *	1976-02-13	1983-11-29	株式会社東芝	Method for manufacturing semiconductor memory device
JPS5922316B2 (en) *	1976-02-24	1984-05-25	株式会社東芝	dynamic memory device
DE2837877C2 (en) *	1978-08-30	1987-04-23	Siemens AG, 1000 Berlin und 8000 München	Method for producing a MOS-integrated semiconductor memory
DE2855118C2 (en) *	1978-12-20	1981-03-26	IBM Deutschland GmbH, 70569 Stuttgart	Dynamic FET memory
DE3173745D1 (en) *	1981-10-30	1986-03-20	Ibm Deutschland	Fet memory
JP5034133B2 (en)	2000-02-29	2012-09-26	富士通セミコンダクター株式会社	Semiconductor memory device
JP4707244B2 (en) *	2000-03-30	2011-06-22	ルネサスエレクトロニクス株式会社	Semiconductor memory device and semiconductor device
TWI359422B (en)	2008-04-15	2012-03-01	Faraday Tech Corp	2t sram and associated cell structure

1974
- 1974-06-28 DE DE2431079A patent/DE2431079C3/en not_active Expired
1975
- 1975-05-14 IT IT23304/75A patent/IT1038100B/en active
- 1975-05-21 GB GB21857/75A patent/GB1502334A/en not_active Expired
- 1975-05-21 JP JP5978375A patent/JPS5428252B2/ja not_active Expired
- 1975-05-22 CH CH657875A patent/CH581885A5/xx not_active IP Right Cessation
- 1975-05-23 FR FR7516563A patent/FR2276659A1/en active Granted

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS52119876A (en) *	1976-03-31	1977-10-07	Ibm	Condenser memory
JPS579157B2 (en) *	1976-03-31	1982-02-19
JPS52154314A (en) *	1976-06-17	1977-12-22	Ibm	Twooelement memory cell
JPS5733632B2 (en) *	1976-06-17	1982-07-17
JPS5513780A (en) *	1978-05-09	1980-01-30	Dynachem Corp	Fluoran coupler containing phototropic photosensitive composition
JPS6352369B2 (en) *	1978-05-09	1988-10-18	Dynachem Corp

Also Published As

Publication number	Publication date
GB1502334A (en)	1978-03-01
FR2276659B1 (en)	1980-01-04
DE2431079B2 (en)	1979-04-26
FR2276659A1 (en)	1976-01-23
CH581885A5 (en)	1976-11-15
DE2431079A1 (en)	1976-02-12
JPS5428252B2 (en)	1979-09-14
DE2431079C3 (en)	1979-12-13
IT1038100B (en)	1979-11-20

Publication	Publication Date	Title
FR2265366B1 (en)	1980-01-11
FR2267138B1 (en)	1976-12-17
FR2257596A1 (en)	1975-08-08
FR2276659B1 (en)	1980-01-04
FR2271830A2 (en)	1975-12-19
DE2424681B2 (en)	1980-02-21
FI223274A (en)	1976-01-24
FR2267074B1 (en)	1979-05-11
FR2282933B1 (en)	1976-12-31
FI753415A (en)	1976-06-06
DK116175A (en)	1975-09-28
FR2283758B1 (en)	1976-12-31
CS173954B1 (en)	1977-03-31
CS167156B1 (en)	1976-04-29
CS174133B2 (en)	1977-03-31
BG22110A1 (en)	1977-02-20
BG21099A1 (en)	1976-03-20
CH600324A5 (en)	1978-06-15
CH589410A5 (en)	1977-07-15
BG22560A1 (en)	1977-04-20
BG22216A1 (en)	1977-02-20
BG22207A1 (en)	1977-02-20
BG21513A1 (en)	1976-07-20
BG21493A1 (en)	1976-07-20
BG21475A1 (en)	1976-07-20