[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS51137384A - Semi conductor device manufacturing method - Google Patents

Semi conductor device manufacturing method

Info

Publication number
JPS51137384A
JPS51137384A JP6108575A JP6108575A JPS51137384A JP S51137384 A JPS51137384 A JP S51137384A JP 6108575 A JP6108575 A JP 6108575A JP 6108575 A JP6108575 A JP 6108575A JP S51137384 A JPS51137384 A JP S51137384A
Authority
JP
Japan
Prior art keywords
device manufacturing
conductor device
semi conductor
manufacturing
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6108575A
Other languages
Japanese (ja)
Inventor
Kazuyuki Saito
Katsumi Murase
Michiyuki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6108575A priority Critical patent/JPS51137384A/en
Publication of JPS51137384A publication Critical patent/JPS51137384A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: A manufacturing method for MOS transistor having source or drain domain providing a suitable electric contact.
COPYRIGHT: (C)1976,JPO&Japio
JP6108575A 1975-05-23 1975-05-23 Semi conductor device manufacturing method Pending JPS51137384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6108575A JPS51137384A (en) 1975-05-23 1975-05-23 Semi conductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6108575A JPS51137384A (en) 1975-05-23 1975-05-23 Semi conductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS51137384A true JPS51137384A (en) 1976-11-27

Family

ID=13160904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6108575A Pending JPS51137384A (en) 1975-05-23 1975-05-23 Semi conductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS51137384A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPS5756927A (en) * 1981-07-28 1982-04-05 Hitachi Ltd Electrode structure for semiconductor device and manufacture thereof
JPS592320A (en) * 1982-06-28 1984-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPS5975669A (en) * 1982-10-25 1984-04-28 Seiko Epson Corp Thin film semiconductor device and manufacture thereof
JPS6187375A (en) * 1985-10-18 1986-05-02 Nec Corp Manufacture of semiconductor device
JPS61114524A (en) * 1984-11-09 1986-06-02 Nec Corp Manufacture of semiconductor device
JPH01103874A (en) * 1988-05-20 1989-04-20 Matsushita Electric Ind Co Ltd Mos type semiconductor device and manufacture thereof
JPH03101264A (en) * 1990-05-07 1991-04-26 Nec Corp Manufacture of complementary field effect transistor
JPH07106563A (en) * 1994-04-15 1995-04-21 Toshiba Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911583A (en) * 1972-06-01 1974-02-01
JPS49105490A (en) * 1973-02-07 1974-10-05

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911583A (en) * 1972-06-01 1974-02-01
JPS49105490A (en) * 1973-02-07 1974-10-05

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574175A (en) * 1978-11-29 1980-06-04 Nec Corp Preparing interpolation type mos semiconductor device
JPH0127589B2 (en) * 1978-11-29 1989-05-30 Nippon Electric Co
JPS5756927A (en) * 1981-07-28 1982-04-05 Hitachi Ltd Electrode structure for semiconductor device and manufacture thereof
JPS592320A (en) * 1982-06-28 1984-01-07 Fujitsu Ltd Manufacture of semiconductor device
JPS5975669A (en) * 1982-10-25 1984-04-28 Seiko Epson Corp Thin film semiconductor device and manufacture thereof
JPS61114524A (en) * 1984-11-09 1986-06-02 Nec Corp Manufacture of semiconductor device
JPS6187375A (en) * 1985-10-18 1986-05-02 Nec Corp Manufacture of semiconductor device
JPH01103874A (en) * 1988-05-20 1989-04-20 Matsushita Electric Ind Co Ltd Mos type semiconductor device and manufacture thereof
JPH0618214B2 (en) * 1988-05-20 1994-03-09 松下電器産業株式会社 Method for manufacturing MOS semiconductor device
JPH03101264A (en) * 1990-05-07 1991-04-26 Nec Corp Manufacture of complementary field effect transistor
JPH07106563A (en) * 1994-04-15 1995-04-21 Toshiba Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS54881A (en) Semiconductor device
JPS51137384A (en) Semi conductor device manufacturing method
JPS5224465A (en) Schottky barrier semiconductor device
JPS52117586A (en) Semiconductor device
JPS5215274A (en) Semiconductor device
JPS5384571A (en) Insulating gate type field effect transistor and its manufacture
JPS5346288A (en) Mis type semiconductor device
JPS5434044A (en) Constant voltage circuit
JPS53130991A (en) Semiconductor device
JPS53104183A (en) Junction gate-type field effect transistor
JPS51113478A (en) The manufacturing method of semiconductor device
JPS5223274A (en) Self-matching type semiconductor device
JPS5286779A (en) Semiconductor device
JPS5265682A (en) Semiconductor device
JPS548986A (en) Semiconductor device
JPS51147188A (en) Semicoductor device
JPS5240983A (en) Process for production of semiconductor device
JPS51144184A (en) Production method of semiconductor unit
JPS5270778A (en) Semiconductor device
JPS51117581A (en) Manufacturing method of mos type semiconductor equipment
JPS5245274A (en) Method for inspection before perfection of transistor
JPS547881A (en) Mos field effect transistor
JPS51114075A (en) Construction of field effect transistor
JPS5310281A (en) Production of mos type semiconductor integrated circuit
JPS51147268A (en) Manufacturing process of depression type field effect semiconductor de vice by ion-implantation