[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS51115769A - Seniconductor compound and method of producucing single crystal thereof - Google Patents

Seniconductor compound and method of producucing single crystal thereof

Info

Publication number
JPS51115769A
JPS51115769A JP1437776A JP1437776A JPS51115769A JP S51115769 A JPS51115769 A JP S51115769A JP 1437776 A JP1437776 A JP 1437776A JP 1437776 A JP1437776 A JP 1437776A JP S51115769 A JPS51115769 A JP S51115769A
Authority
JP
Japan
Prior art keywords
producucing
seniconductor
compound
single crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1437776A
Other languages
Japanese (ja)
Other versions
JPS5412267B2 (en
Inventor
Pieeru Besereeru Jiyan
Jiyosefu Poaburoo Jieraaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS51115769A publication Critical patent/JPS51115769A/en
Publication of JPS5412267B2 publication Critical patent/JPS5412267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42Gallium arsenide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C30B11/065Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1437776A 1975-02-12 1976-02-12 Seniconductor compound and method of producucing single crystal thereof Granted JPS51115769A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7504325A FR2300616A1 (en) 1975-02-12 1975-02-12 SEMICONDUCTOR COMPOUNDS SYNTHESIS PROCESS

Publications (2)

Publication Number Publication Date
JPS51115769A true JPS51115769A (en) 1976-10-12
JPS5412267B2 JPS5412267B2 (en) 1979-05-22

Family

ID=9151100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1437776A Granted JPS51115769A (en) 1975-02-12 1976-02-12 Seniconductor compound and method of producucing single crystal thereof

Country Status (5)

Country Link
JP (1) JPS51115769A (en)
BE (1) BE838425A (en)
DE (1) DE2605125A1 (en)
FR (1) FR2300616A1 (en)
GB (1) GB1502087A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155073U (en) * 1984-09-11 1986-04-14

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63195187A (en) * 1987-02-06 1988-08-12 Furukawa Electric Co Ltd:The Crystal growth apparatus for compound semiconductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1494831A (en) * 1966-07-05 1967-09-15 Radiotechnique Coprim Method of manufacturing a single crystal and implementation device
JPS499183A (en) * 1972-05-11 1974-01-26

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1494831A (en) * 1966-07-05 1967-09-15 Radiotechnique Coprim Method of manufacturing a single crystal and implementation device
JPS499183A (en) * 1972-05-11 1974-01-26

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6155073U (en) * 1984-09-11 1986-04-14

Also Published As

Publication number Publication date
FR2300616B1 (en) 1977-07-22
JPS5412267B2 (en) 1979-05-22
DE2605125A1 (en) 1976-08-26
BE838425A (en) 1976-08-10
GB1502087A (en) 1978-02-22
FR2300616A1 (en) 1976-09-10

Similar Documents

Publication Publication Date Title
JPS51117199A (en) Method of making single crystal
ZA757846B (en) Novel silicon crystals and method of producing same
JPS5215955A (en) Multiivvpulley and method of producing same
GB1542940A (en) Dihydroimidazopyridinones and derivatives of such compounds
JPS51119305A (en) Bricket and method of producing same
JPS5271170A (en) Method of making mostly single crystal ribon
ZA76460B (en) Substituted benzodiazepin-10-ones and method of use
JPS51149181A (en) Pullluppgrowth of single crystal materials
JPS5242479A (en) Continuous fabrication of determineddform single crystals and apparatus therefor
JPS527951A (en) Isolating method of 33hydroxysteroid and 33oxosteroid
JPS5280397A (en) Popymerization method of epsilonncaprolactam
JPS51151299A (en) Method of making single crystal galliumnitride
JPS5219623A (en) Nitryle and method of its preparation
PH12074A (en) Diarylbutanolamines and method of use thereof
GB1555474A (en) Pesticidal composition and method of compatingpests
JPS5264489A (en) Composition of substance and method
JPS5277415A (en) Fixed anchor and method of making same
JPS51115769A (en) Seniconductor compound and method of producucing single crystal thereof
JPS5218757A (en) Compound and method of cohting
JPS5262225A (en) New compound and method of manufacturing
JPS5283326A (en) Perflvoroalkyllacetyllchloride and method of manufacturing
JPS5264488A (en) Composition of substance and method
JPS5224962A (en) Method of colddrolling
JPS51149597A (en) Single crystal of ferroodielectric material and method of growth thereof
JPS5252900A (en) Method of making single crystal whisker of magnesiaaalumina spinel