JPS51115769A - Seniconductor compound and method of producucing single crystal thereof - Google Patents
Seniconductor compound and method of producucing single crystal thereofInfo
- Publication number
- JPS51115769A JPS51115769A JP1437776A JP1437776A JPS51115769A JP S51115769 A JPS51115769 A JP S51115769A JP 1437776 A JP1437776 A JP 1437776A JP 1437776 A JP1437776 A JP 1437776A JP S51115769 A JPS51115769 A JP S51115769A
- Authority
- JP
- Japan
- Prior art keywords
- producucing
- seniconductor
- compound
- single crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
- C30B11/065—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added before crystallising, e.g. synthesis
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7504325A FR2300616A1 (en) | 1975-02-12 | 1975-02-12 | SEMICONDUCTOR COMPOUNDS SYNTHESIS PROCESS |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51115769A true JPS51115769A (en) | 1976-10-12 |
JPS5412267B2 JPS5412267B2 (en) | 1979-05-22 |
Family
ID=9151100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1437776A Granted JPS51115769A (en) | 1975-02-12 | 1976-02-12 | Seniconductor compound and method of producucing single crystal thereof |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS51115769A (en) |
BE (1) | BE838425A (en) |
DE (1) | DE2605125A1 (en) |
FR (1) | FR2300616A1 (en) |
GB (1) | GB1502087A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6155073U (en) * | 1984-09-11 | 1986-04-14 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63195187A (en) * | 1987-02-06 | 1988-08-12 | Furukawa Electric Co Ltd:The | Crystal growth apparatus for compound semiconductor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1494831A (en) * | 1966-07-05 | 1967-09-15 | Radiotechnique Coprim | Method of manufacturing a single crystal and implementation device |
JPS499183A (en) * | 1972-05-11 | 1974-01-26 |
-
1975
- 1975-02-12 FR FR7504325A patent/FR2300616A1/en active Granted
-
1976
- 1976-02-10 GB GB511376A patent/GB1502087A/en not_active Expired
- 1976-02-10 DE DE19762605125 patent/DE2605125A1/en not_active Withdrawn
- 1976-02-10 BE BE164213A patent/BE838425A/en unknown
- 1976-02-12 JP JP1437776A patent/JPS51115769A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1494831A (en) * | 1966-07-05 | 1967-09-15 | Radiotechnique Coprim | Method of manufacturing a single crystal and implementation device |
JPS499183A (en) * | 1972-05-11 | 1974-01-26 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6155073U (en) * | 1984-09-11 | 1986-04-14 |
Also Published As
Publication number | Publication date |
---|---|
FR2300616B1 (en) | 1977-07-22 |
JPS5412267B2 (en) | 1979-05-22 |
DE2605125A1 (en) | 1976-08-26 |
BE838425A (en) | 1976-08-10 |
GB1502087A (en) | 1978-02-22 |
FR2300616A1 (en) | 1976-09-10 |
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