JPS5987157U - darlington transistor - Google Patents
darlington transistorInfo
- Publication number
- JPS5987157U JPS5987157U JP18294782U JP18294782U JPS5987157U JP S5987157 U JPS5987157 U JP S5987157U JP 18294782 U JP18294782 U JP 18294782U JP 18294782 U JP18294782 U JP 18294782U JP S5987157 U JPS5987157 U JP S5987157U
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- conductivity type
- emitter
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来のダーリントントランジスタの回路図、第
2図は第1図のトランジスタの縦断面図、第3図はこの
考案によるダーリントントランジスタの回路図、第4図
は同トランジスタの縦断面図である。
N1・・・第1の領域、P□・・・第2の領域、N2・
・・第3の領域、N4. N5・・・第4の領域、N3
・・・第5の領域ぐP2・・・第6の領域。Figure 1 is a circuit diagram of a conventional Darlington transistor, Figure 2 is a vertical cross-sectional view of the transistor shown in Figure 1, Figure 3 is a circuit diagram of a Darlington transistor according to this invention, and Figure 4 is a vertical cross-sectional view of the same transistor. be. N1...first area, P□...second area, N2...
...Third area, N4. N5...Fourth area, N3
...Fifth area P2...Sixth area.
Claims (1)
領域とを接合し、第2領域内に第1の導電型の第3及び
第4の領域を間隔をおいて形成して、第1領域を共通の
コレクタ、第2領域を共通のベース、第3及び第4の領
域をそれぞれのエミッタとする第1及び第2のトランジ
スタを構成し、第2の領域内に第3及び第4の領域と間
隔をおいて第1の導電型の第5の領域を形成し、第5の
領域内に第2の導電型の第6の領域を形成して、第2、
の領域をコレクタ、第5の領域をベース、第6の領
域をエミッタとする第3のトランジスタを構成し、第1
のトランジスタのベースである第2の領域、第2のトラ
ンジスタのエミッタである第3の領域及び第3のトラン
ジスタのエミッタである第 26の領域を互いに
電気的に接続してなるダーリントントランジスタ。A first region of a first conductivity type and a second region of a second conductivity type are joined, and third and fourth regions of the first conductivity type are spaced apart within the second region. the first and second transistors each having a common collector in the first region, a common base in the second region, and respective emitters in the third and fourth regions; forming a fifth region of the first conductivity type spaced apart from the third and fourth regions; forming a sixth region of the second conductivity type within the fifth region; ,
A third transistor is configured in which the region is the collector, the fifth region is the base, and the sixth region is the emitter.
A Darlington transistor, in which a second region which is the base of the transistor, a third region which is the emitter of the second transistor, and a twenty-sixth region which is the emitter of the third transistor are electrically connected to each other.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18294782U JPS5987157U (en) | 1982-12-01 | 1982-12-01 | darlington transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18294782U JPS5987157U (en) | 1982-12-01 | 1982-12-01 | darlington transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5987157U true JPS5987157U (en) | 1984-06-13 |
Family
ID=30396065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18294782U Pending JPS5987157U (en) | 1982-12-01 | 1982-12-01 | darlington transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5987157U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54137284A (en) * | 1978-04-07 | 1979-10-24 | Philips Nv | Semiconductor device |
JPS5740970A (en) * | 1980-08-25 | 1982-03-06 | Matsushita Electronics Corp | Monolithic darlington transistor |
-
1982
- 1982-12-01 JP JP18294782U patent/JPS5987157U/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54137284A (en) * | 1978-04-07 | 1979-10-24 | Philips Nv | Semiconductor device |
JPS5740970A (en) * | 1980-08-25 | 1982-03-06 | Matsushita Electronics Corp | Monolithic darlington transistor |
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