JPS5947759A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5947759A JPS5947759A JP57158408A JP15840882A JPS5947759A JP S5947759 A JPS5947759 A JP S5947759A JP 57158408 A JP57158408 A JP 57158408A JP 15840882 A JP15840882 A JP 15840882A JP S5947759 A JPS5947759 A JP S5947759A
- Authority
- JP
- Japan
- Prior art keywords
- type
- skin layer
- substrate
- layer
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004020 conductor Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052714 tellurium Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 abstract description 3
- 229910052793 cadmium Inorganic materials 0.000 abstract description 3
- 229910052753 mercury Inorganic materials 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 4
- 238000009825 accumulation Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 210000003491 skin Anatomy 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000002615 epidermis Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14868—CCD or CID colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
ｆａ＋ 発明の技術分野
本発明は半導体装置に係り、特に水鉢トカドミウム・テ
ルルよりなるＭＴＳ型光セン男の構造に関する。DETAILED DESCRIPTION OF THE INVENTION fa+ Technical Field of the Invention The present invention relates to a semiconductor device, and more particularly to the structure of an MTS type optical sensor made of tocadmium tellurium.
（ｂｌ 従来技術と問題点
従来より水銀・カドミウム・テルル（ｌｌｇｃｄＴｅ）
を用いて、赤外検知器のような光センサが作成され、実
用に供されている。第１図は」二記従来の光センサの一
例としての、ｌｌｇｃｄＴｅよりなるＭＩＳ型ＣＩＤ
（電荷注入素子）を示す要部１ｔｌｆ面図゛乙同図に見
られる如〈従来の赤外センサは、ｐ型のｌ１ｇＣｄＴｅ
よりなる基板１と、ｎ型に変換された表皮層２と、その
上に絶縁膜３を介して配設された複数１１ｈ１の読み出
し電極４及び蓄積電極５とから構成されている。(bl Conventional technology and problems Conventionally, mercury, cadmium, tellurium (llgcdTe)
Using this method, optical sensors such as infrared detectors have been created and put into practical use. Figure 1 shows a MIS type CID made of llgcdTe as an example of a conventional optical sensor.
A 1tlf side view of the main part showing the charge injection device (charge injection device).
The device is composed of a substrate 1 made of a substrate 1, a skin layer 2 converted to n-type, and a plurality of readout electrodes 4 and storage electrodes 5 of 11h1 disposed thereon with an insulating film 3 interposed therebetween.
上記ＩＩＨＣｄＴｅよりなるＣＩＤを高速で動作さ−Ｌ
るためには、不要となった電荷を速やかに消滅させるこ
とが必要で、それには動作時に基板１と表皮層２との間
に逆バイアスを印加することが望ましい。しかし上記構
造では、基板の切断面であるチップ６の端面７に、ｐ型
の基板１とｎ型の表皮層２との間のｐ−ｎ接合８の端部
が露出しているため、当該部分においてリーク電流の発
生が避りられず、逆バイアスを印力１目゛るとこのリー
ク電流が増大し、素子の温度上昇を招く等の問題が４１
−しる。The above CID made of IIHCdTe is operated at high speed.
In order to achieve this, it is necessary to quickly eliminate unnecessary charges, and for this purpose, it is desirable to apply a reverse bias between the substrate 1 and the skin layer 2 during operation. However, in the above structure, the end of the p-n junction 8 between the p-type substrate 1 and the n-type skin layer 2 is exposed on the end surface 7 of the chip 6, which is the cut surface of the substrate. The occurrence of leakage current is unavoidable in some parts, and when a reverse bias is applied for the first time, this leakage current increases, causing problems such as an increase in the temperature of the element.
- Sign.
更に」二記構造は光センサとしての素子形成部以外の、
ｐ−ｎ接合を必要としない領域にも接合が形成され、接
合面積が必要以上に大きいことも、リーク電流が増大す
る一因となる。そのため従来構造のＨｇＣｄＴｅよりな
る光センサは、実用」二その動作時に逆バイアスを印加
することが出来ず、従って動作速度は必ずしも満足し得
るとはｔｌい！ｉ！ｌｆい。In addition, the structure described in "2 above" has a structure other than the element forming part as a photosensor.
A junction is formed even in a region that does not require a pn junction, and the junction area is larger than necessary, which also contributes to an increase in leakage current. For this reason, it is not possible to apply a reverse bias to a conventionally structured optical sensor made of HgCdTe during its operation, and therefore the operation speed is not necessarily satisfactory! i! lf.
（Ｃ） 発明の目的
本発明の目的は、上記リーク電流の少ない、従ってｐ−
ｎ接合に逆バイアスを印加しζ１ｒ（１連動作可能なＩ
ＩｇＣｄＴｅよりなる光センサを提供することにある。(C) Object of the Invention The object of the present invention is to reduce the leakage current as described above, and thus reduce the p-
A reverse bias is applied to the n junction and ζ1r (I
An object of the present invention is to provide an optical sensor made of IgCdTe.
（ｄ） 発明の構成
本発明の特徴は、ｐ型の水銀・カドミウム・テルルより
なる半導体基板と、該半導体基板表面に島状に形成され
たｎ型表皮層とを有し、該ｎ型表皮層に所定の受光素子
が形成されてなることにある。(d) Structure of the Invention The present invention is characterized by having a p-type semiconductor substrate made of mercury, cadmium, and tellurium, and an n-type skin layer formed in an island shape on the surface of the semiconductor substrate. A predetermined light receiving element is formed in the layer.
（ｅｌ 発明の実施例
以下本発明の一実施例を、その製造工程と共に第２図〜
第５図を参照して説明する。(el Embodiment of the Invention Below, an embodiment of the present invention, together with its manufacturing process, is shown in Figures 2 to 2.
This will be explained with reference to FIG.
第２図において、１はＩＩｇＣｄＴｅよりなる基板で、
予め水銀（ｌ１ｇ）雰囲気中において例えば凡そ６００
（”Ｃ）で４〔時間〕程度の加熱処理を施す。このよう
にすると、ｌ１ｇｃｄＴｅ基板中のｌ１ｇが基板結晶か
ら抜は出し、あとに空格子点が残される。この空格子点
はアクセプタとして働くので、上記Ｉｆ ｇＣ（］ Ｔ
ｅ基板１は深層部までｐ型に変換される。この１Ｉｔ
ＸｃｄＴｅ基板１表面に、例えば化学気相成長法（ＣＶ
Ｄ法）により、素子形成領域を開ｌ」部１０とする二酸
化シリコン（５ｔＯ２）膜１１を選択的に形成する。In FIG. 2, 1 is a substrate made of IIgCdTe,
For example, approximately 600
Heat treatment is performed at ("C) for about 4 hours. In this way, l1g in the l1gcdTe substrate is extracted from the substrate crystal, leaving behind vacancies. These vacancies act as acceptors. Since the above If gC(] T
The e-substrate 1 is converted to p-type even in its deep layer. This 1It
For example, chemical vapor deposition (CVD) is applied to the surface of the XcdTe substrate 1.
Using method D), a silicon dioxide (5tO2) film 11 is selectively formed to form an open portion 10 in the element formation region.
次いで上記５ｉ０２１１Ｒ’ｌｌをマスクとして、ＩＩ
Ｆ、雰囲気中において、ｌ１ｇｃｄＴｅ基板１に、例え
ば凡そ２５０（”Ｃ）で４〔時間〕程度の低温加熱処理
を施す。Then, using the above 5i0211R'll as a mask, II
F. In an atmosphere, the l1gcdTe substrate 1 is subjected to low-temperature heat treatment, for example, at about 250 ("C) for about 4 hours.
このようにすることにより第３図に示すよ・うに、１１
ｇＣｄＴｅ基板１の前記開口部１０内表層部は、空格子
点に再びＩｌｇが入り込み、低濃度ｎ型層に変換される
。この現象は処理時間が短いため基板深層部までは及ば
ず、表層部のみに限られる。かくしてｐ型のｌ１ｇ（：
ｄＴｅ基板１表面に、ｎ型の表皮Ｊｆｉ（素子形成領域
）１２が島状に形成される。By doing this, as shown in Figure 3, 11
In the surface layer inside the opening 10 of the gCdTe substrate 1, Ilg enters the vacancies again and is converted into a low concentration n-type layer. Since the processing time is short, this phenomenon does not extend to the deep layer of the substrate, but is limited to the surface layer. Thus p-type l1g (:
On the surface of the dTe substrate 1, an n-type skin Jfi (element formation region) 12 is formed in the form of an island.
なお本工程を実施するに際し、基板１の背面側は図示は
していないが全面をＳｉＯ２膜で被覆しておき、上記加
熱処理工程終了後に除去する。こうすることにより基板
１背面側はｐ型のまま保たれ、上述の如く開口部１０内
表層部のみがｎ型に変換され、素子形成領域が画定され
る。Note that when carrying out this step, the entire back side of the substrate 1 is coated with a SiO2 film (not shown), which is removed after the above heat treatment step is completed. By doing so, the back side of the substrate 1 remains p-type, and as described above, only the inner surface layer of the opening 10 is converted to n-type, thereby defining an element formation region.
このあとのコー程は通常の光センサのＭ：’１ 渭方法
に従って進めて良い。即ち、第４図に示す如く、ＣＶＤ
法により ５ｉ０２股１３を形成する等の方法により、
ｎ型の表皮層１２表面を所定の絶縁膜で被覆する。The subsequent process may proceed according to the M:'1 method of a normal optical sensor. That is, as shown in FIG.
By a method such as forming a 5i02 crotch 13 by a method,
The surface of the n-type skin layer 12 is covered with a predetermined insulating film.
この５ｉ０２膜１３上の所定位置に、赤外線に対して透
明な導電材料１例えばクロムの薄）模よりなる読み出し
電極Ｉ４を選択的に形成し、次いで上記読み出し電極１
４表面を含むｎ型の表皮層１２表面に再び５ｉ０２膜１
４を形成し、その上の所定位置に赤外線に対して不透明
な金属よりなる蓄積電極１５を形成する。At a predetermined position on this 5i02 film 13, a readout electrode I4 made of a conductive material 1, such as a thin layer of chromium, transparent to infrared rays is selectively formed.
5i02 film 1 again on the surface of the n-type skin layer 12 including the 4 surface.
4, and a storage electrode 15 made of a metal that is opaque to infrared rays is formed at a predetermined position thereon.
このようにして得られた本実施例Ｑ月Ｉ Ｂ Ｃｄ Ｔ
ｅよりなる赤外検知器は、ｎ型表皮層１２が島状に形
成されているので、従来の赤外検知器のように素子の端
面７にｐ−ｎ接合１６の端部が露出するごとがなく、ま
たｐ−ｎ接合１６ばｎ型の表皮ＩＷ１２の底部にのみ形
成され、不要部には存在しないので、接合面積は従来に
比較し一ζ減少する。この２つの効果により本実施例で
はり−ク電流が極めて小さいので、ｐ−ｎ接合１６に逆
バイアスを印加することが可能となり、従って高速動作
が可能となる。This example Q month I B Cd T obtained in this way
In the infrared detector made of e, the n-type skin layer 12 is formed in the form of an island, so that when the end of the p-n junction 16 is exposed on the end face 7 of the element, unlike the conventional infrared detector, Furthermore, since the p-n junction 16 is formed only at the bottom of the skin IW 12 and is not present in unnecessary parts, the junction area is reduced by 1ζ compared to the conventional one. Because of these two effects, the leakage current in this embodiment is extremely small, so it is possible to apply a reverse bias to the pn junction 16, and therefore high-speed operation is possible.
なお上記一実施例の説明において、ｒ１型の表皮Ｊｉ＃
１２を形成するための加熱処理工程の温度、あるいは加
熱時間、マスクとして使用する絶縁膜の種類等は、適宜
選択し得るものであって本発明を限定するものでないこ
とば、特に説明するまでもないであろう。In addition, in the description of the above example, r1 type epidermis Ji#
The temperature or heating time of the heat treatment step for forming 12, the type of insulating film used as a mask, etc. can be selected as appropriate, and do not limit the present invention, so there is no need to specifically explain them. Will.
ｆｆ） 発明の詳細
な説明した如く本発明によれば、リーク電流が少なく、
従って逆バイアスを印加して１ｒ１１速動作可能な光セ
ンサが得られる。ff) As described in detail, according to the present invention, leakage current is small;
Therefore, an optical sensor capable of operating at 1r11 speeds by applying a reverse bias can be obtained.
第１図は従来の光センサの説明に供するための要部断面
図、第２図〜第４図は本発明の一実施例を示す要部断面
図である。
図において、■はｐ型１１ｇｃｄＴｅ基板、２はｎ型に
変換された表皮層、３，１３ば絶縁膜、４，１４は読み
出し電極、５．１５は蓄積電極、７は醋１面、８゜１６
はｐ−ｎ接合、１１は絶縁膜、１２は、−１ｊ状に形成
されたｎ型の表皮層を示す。
第１図
多
旦
第２図
第３図
１
第４図
（１ツ・
＼−FIG. 1 is a sectional view of a main part for explaining a conventional optical sensor, and FIGS. 2 to 4 are sectional views of main parts showing an embodiment of the present invention. In the figure, ■ is a p-type 11gcdTe substrate, 2 is a skin layer converted to n-type, 3 and 13 are insulating films, 4 and 14 are readout electrodes, 5 and 15 are storage electrodes, 7 is a 1st surface, and 8° 16
1 is a pn junction, 11 is an insulating film, and 12 is an n-type skin layer formed in a -1j shape. Figure 1: Figure 2: Figure 3: Figure 1: Figure 4 (1 piece)
Claims (1)
板と、該半導体基板表面に島状に形成されｌコｎ型表皮
層とを有し、該ｎ型表皮ＪＭに所定の受光素子が形成さ
れてなることを特徴とする１り導体装置。It has a p-type mercury-cadmium-tellurium, JM, semiconductor substrate, and an island-shaped n-type skin layer formed on the surface of the semiconductor substrate, and a predetermined light-receiving element is formed on the n-type skin JM. A single conductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57158408A JPS5947759A (en) | 1982-09-10 | 1982-09-10 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57158408A JPS5947759A (en) | 1982-09-10 | 1982-09-10 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5947759A true JPS5947759A (en) | 1984-03-17 |
Family
ID=15671097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57158408A Pending JPS5947759A (en) | 1982-09-10 | 1982-09-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5947759A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0441503A (en) * | 1990-06-07 | 1992-02-12 | Asahi Chem Ind Co Ltd | Production of diene copolymer latex |
-
1982
- 1982-09-10 JP JP57158408A patent/JPS5947759A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0441503A (en) * | 1990-06-07 | 1992-02-12 | Asahi Chem Ind Co Ltd | Production of diene copolymer latex |
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