JPS5946073A - Semiconductor thin film light emitting element - Google Patents
Semiconductor thin film light emitting elementInfo
- Publication number
- JPS5946073A JPS5946073A JP57156111A JP15611182A JPS5946073A JP S5946073 A JPS5946073 A JP S5946073A JP 57156111 A JP57156111 A JP 57156111A JP 15611182 A JP15611182 A JP 15611182A JP S5946073 A JPS5946073 A JP S5946073A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- light emitting
- semiconductor
- mixed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 239000010409 thin film Substances 0.000 title claims description 41
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 239000004020 conductor Substances 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 239000003086 colorant Substances 0.000 abstract description 7
- 239000011521 glass Substances 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003955 hot wall epitaxy Methods 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は新規な半導体薄膜発光素子に関し、特に、好み
の発光色をｆＩｉられ、各種表示装置の発光素子−とし
て好適である新規な〉１“導体薄１１！ｉ！発光素ｆを
提供しようとするものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a novel semiconductor thin film light emitting device, and in particular to a novel semiconductor thin film light emitting device, which can emit light of a desired color and is suitable as a light emitting device for various display devices. It is intended to provide a thin 11!i! light-emitting element f.
発明の概要
本発明半導体薄膜発光素ｒの第１のものは、禁制帯幅の
異なる２種の半導体月利を用い、禁制帯幅の大きな力の
半導体材料から成る」′−導体薄膜層の間に前記２種の
゛ト導体の混晶相才］から成る゛１′°導体薄膜層を挟
持状にした積層体を透明゛電極と背面′１１を極との間
に挟置して成ることを特徴とする。これによって禁制帯
幅の小さな方の゛Ｖ導体薄膜層を構成している混晶材料
とその混晶比を適宜番、−１ふことによって、好みの発
光色を得ることかできる。Summary of the Invention The first semiconductor thin film light emitting device of the present invention uses two types of semiconductor materials with different forbidden band widths, and is made of a semiconductor material with a large forbidden band width between the conductive thin film layers. A laminate comprising a 1' conductor thin film layer sandwiched between the transparent electrode and the back surface '11' is sandwiched between the transparent electrode and the back surface '11'. It is characterized by As a result, a desired emission color can be obtained by adjusting the mixed crystal material constituting the V conductor thin film layer with the smaller forbidden band width and the mixed crystal ratio by -1 as appropriate.
また、本発明半導体薄膜発光′、＋８ｒの第２のものは
、禁制帯幅の異なる２種の≧１′°導体材利を川し１、
禁制帯幅の大きな方の゛１′導体材石から成る゛１′４
体薄膜層と前記２種の半導体の混晶材料から成る゛１′
導体薄膜層とを交互に積層し、そして、１ｌｉｊ品材才
゛］から成る複数の半導体薄ｌり層の混晶比を変化させ
たことを特徴とする。これによって、それぞれ１７〜品
比の異なる混晶材料による半導体薄膜層での発光色の合
成色による発光がイ１すられ、従って、混晶材料と１ｈ
ｉ晶比の組み合わせを適宜に選ぶことにより、好１ノの
色の発光色を岩°易に得ることかできる。In addition, the second semiconductor thin film light emitting device according to the present invention, +8r, uses two types of ≧1′° conductor materials with different forbidden band widths.
``1'4'' made of ``1'' conductor material stone with larger forbidden band width
1' consisting of a body thin film layer and a mixed crystal material of the two types of semiconductors mentioned above.
It is characterized in that conductor thin film layers are alternately laminated, and the mixed crystal ratio of the plurality of thin semiconductor layers made of 1lij material is varied. As a result, the light emitted by the composite color of the emitted light in the semiconductor thin film layer by the mixed crystal materials with different product ratios is improved, and therefore, the mixed crystal materials and the
By appropriately selecting a combination of i-crystal ratios, it is possible to easily obtain a preferred luminescent color.
実施例
以下に、本発明半導体薄膜発光素子の第１のものの５Ｔ
細を図示実施例に従って説明する。尚、この実施例では
、禁制帯幅の異なる２種の半導体材料として、硫化亜鉛
（ＺｎＳ）とセレン化１１１（鉛（Ｚ ｎ Ｓ ｅ）を
用いた場合を例として説、明する。Examples Below, 5T of the first semiconductor thin film light emitting device of the present invention will be described.
The details will be explained according to the illustrated embodiment. In this example, a case will be explained in which zinc sulfide (ZnS) and selenide 111 (lead (Z n S e)) are used as two types of semiconductor materials having different forbidden band widths.
従って、混晶材料は亜鉛（Ｚｎ）と硫の（Ｓ）とセレン
（Ｓｅ）の３つの構成元素を含む多元材料（ＺｎＳｘＳ
ｅ （ｔ−Ｘ ）） である。Therefore, the mixed crystal material is a multi-element material (ZnSxS) containing three constituent elements: zinc (Zn), sulfur (S) and selenium (Se).
e (t-X)).
■は透明基板であり、ガラス板又はシリコン（Ｓｉ）、
ガリウム−砒素（ＧａＡｓ）等の単結晶基板から成る。■ is a transparent substrate, which is a glass plate or silicon (Si),
It consists of a single crystal substrate such as gallium-arsenide (GaAs).
２は透明電極であり、例えはインシラ／−，−−１−ｉ
ｆの酸化物の薄膜から成り、１１１記透明基根Ｊ１７）
フッの面に被着形成される。2 is a transparent electrode, for example, insira/-,--1-i
It consists of a thin film of oxide of f, 111 transparent base J17)
It is deposited on the surface of the foot.
３は半導体薄１模で、例えは何？化仙鉛ｔ’、 ７．
ｎ Ｓ ）の１００〜１０００オンゲス１０−八（八）
イぐｔの薄膜である。3 is 1 model of semiconductor thin film, what is the analogy? Kasen lead t', 7.
n S ) 100-1000 onges 10-8 (eight)
It is a thin film of igut.
４は活性層で、１１ｊ記？１′導体薄膜３の゛１′導体
材４゛［より禁制帯幅の小さなゝＩ′導体月利と前記゛
１′導体薄１１９層３の半導体材料との混晶材７ｒ′］
から成る薄１１１−１で、前記半導体薄１１り３とはへ
テロ接合されている。そして、この活性層４の半導体材
木゛ｌは［１１１記゛１′導体薄膜３の半導体材料より
禁１（−１帯幅が小さなもので、例えは前述のように゛
１′：導体薄１１り３の゛１′″導体旧石を硫化亜鉛（
ＺｎＳ）と１〜だ場合は、セ］／ン化亜鉛（Ｚ ｎ Ｓ
ｅ）と硫化＋１ｊ鉛（Ｚ ｎ Ｓ ）とノ１１４晶材
料（ＺｎＳｘＳｅ 〈１−Ｘ ））が考λられる。そし
て、この活性層４の膜厚はｌＯ〜２００オンゲストロー
１、（八）である。4 is the active layer, 11j? 1' conductor material 4 of 1' conductor thin film 3 [Mixed crystal material 7r' of 1' conductor material with smaller forbidden band width and semiconductor material of the 119 layer 3 of 1' conductor thin film]
The semiconductor thin layer 111-1 is heterojunctioned with the semiconductor thin layer 11-3. The semiconductor material 1 of the active layer 4 has a narrower band width than the semiconductor material of the conductor thin film 3. Zinc sulfide (
ZnS) and 1~, then zinc chloride (ZnS)
e), +1j lead sulfide (Z n S ), and a 114-crystalline material (ZnSxSe <1-X )). The film thickness of this active layer 4 is lO~200 angstrow 1.(8).
５は前記半導体薄１１り３の半導体材料と同様の゛１′
導体材料（前記例ではＺｎ５）から成る１′・導体薄膜
であり、活性層４とへテロ接合され、その層厚は５０〜
５００オングストローム（人）である。5 is the same semiconductor material as the semiconductor material 11 and 3.
It is a 1' conductive thin film made of a conductive material (Zn5 in the above example), is heterojunctioned with the active layer 4, and has a layer thickness of 50 to 50 mm.
It is 500 angstroms (person).
６は半導体薄膜５の背面に接して設けられた背面電極で
ある。この背面電極６は、透明、１′、透明、無彩色、
イ１彩色等適宜のもので良い。Reference numeral 6 denotes a back electrode provided in contact with the back surface of the semiconductor thin film 5. This back electrode 6 is transparent, 1', transparent, achromatic,
B1 Coloring or other appropriate materials may be used.
第２図（Ａ）は１−記半導体薄膜３．５と活性層４とか
ら成る積層体７を厚み方向に薄くスライスして示す断面
図であり、同図（Ｂ）は（Ａ）に対応して各層における
エネルキー憎位の分ろを示すものである。FIG. 2(A) is a sectional view showing the laminated body 7 consisting of the semiconductor thin film 3.5 and the active layer 4 sliced thinly in the thickness direction, and FIG. 2(B) corresponds to (A). This shows the distribution of energy levels in each layer.
第２図からもわかるように、混晶材木１から成る禁制帯
幅の小さな半導体薄膜層をそれより禁制帯幅の大きな半
導体材料から成る薄ｌりによって挟んだ層構造とすると
、量子井戸ＱＷが形成され、禁制帯幅のより小さな平導
体層即ち活性層に電子及び止孔が閉じ込められ、ここで
発光再結合をするため、所定の波長の発光がｔｉＩられ
る。また、Ｊ二記のような量子井戸構造によると、電子
及び正孔が活性層４に閉じ込められ、発光再結合をし易
くなるため、発光効′：４ｚが増大し、従って、駆動電
圧をドげることができる。As can be seen from Fig. 2, if a semiconductor thin film layer made of mixed crystal lumber 1 with a small bandgap is sandwiched between thin layers made of a semiconductor material with a larger bandgap, the quantum well QW will be formed. Electrons and blocking holes are confined in the formed flat conductor layer, that is, the active layer, which has a smaller forbidden band width, and radiative recombination occurs here, so that light emission of a predetermined wavelength is tiI. In addition, according to the quantum well structure as described in J2, electrons and holes are confined in the active layer 4 and are easily recombined by light emission, so that the light emission effect 4z increases and, therefore, the driving voltage can be reduced. can be given.
更に、本発明の半導体薄膜発光素ｒ−によれば、活性層
４を構成する混晶材料の混晶比を変えることにより発光
色を変えることがｉ＋１能となり、２つのゝ１′導体材
料、即ち、ト記例で−（えは、ＺｎＳとＺｎ５ｅの固有
発光色の中間の色をすべて出すことができる。Furthermore, according to the semiconductor thin film light emitting device r- of the present invention, it is possible to change the emission color by changing the mixed crystal ratio of the mixed crystal material constituting the active layer 4. That is, in the example given below, it is possible to produce all the colors intermediate between the inherent luminescent colors of ZnS and Zn5e.
本発明゛１′、導体薄膜発光素ｒ−における積層体に用
いられる半導体材料の組み合わせは、基本的には禁制帯
幅の互いに異なるものであればどんな組み合わせでも良
い。他のへテロ接合素−ｒにおいで性能を左右する鍵と
なる異種材料間における格ｒ不整合は、本発明半導体薄
膜発光素ｒ−の積層体においては、各層がきわめて薄い
ため他のへテロ＃ｉ合素子におけるほどには大きな影響
は生しない。そのため、従来、ペテロ接合に用いられて
いる組み合わせはもとより、より広い範囲の組み合わせ
について適用が可能である。例えは、古色系の発光がｆ
ｊ、）られる前述のＺｎＳ−Ｚｎ５ｅの組み合わせ、緑
色系の発光力端ＩＩられるＧａＡ１．Ｐ−ＧａＰの組み
合わせ、赤色系の発光が得られるＧａＰ−ＧａＡｓＰの
絹み合わせ、赤外の発光がｆｌｔられるＧ ａ Ａ １
． Ａ ｓ Ｇ ａ Ａ ｓのＭｌみ合わせ笠が挙げ
られる。この外にも、２−２．ｗＬ、■−２元、３−２
ノＣ１４−２元化合物の組み合わけも７′；えられ、そ
の適用範囲はきわめて広いもの７″ある。尚、禁制御ｓ
：幅の小さな方の半導体薄ＨＱ層の構成４Ａ斜を２つの
゛１パ導体材料のｌＪ’１品材利とすることにより、格
ｒ定数を近づけることができるというｆｉ１点がある。The combination of semiconductor materials used for the laminate in the conductor thin film light emitting device r- of the present invention 1' may basically be any combination as long as they have different forbidden band widths. The case r mismatch between different materials, which is the key to determining the performance of other heterojunction devices, can be avoided because each layer is extremely thin in the stacked structure of the semiconductor thin film light emitting device of the present invention. The effect is not as large as in the #i combination element. Therefore, it is possible to apply not only the combinations conventionally used for petrojunctions but also a wider range of combinations. For example, paleochromic luminescence is f
The above-mentioned ZnS-Zn5e combination, which is given by J,), and the GaA1. P-GaP combination, GaP-GaAsP combination that produces red light emission, Ga A 1 that produces flt infrared light emission
．． An example is the Ml combination hat of As Ga As. In addition to this, 2-2. wL, ■-2 yuan, 3-2
Combinations of C14-binary compounds are also possible, and the range of application is extremely wide.
: There is a fi1 point that the lattice r constant can be made close to each other by making the structure 4A diagonal of the semiconductor thin HQ layer with the smaller width by using lJ'1 material of two 1-pass conductor materials.
別表に、いくつかの゛１′導体の組み合わせを、禁制イ
１ｆ幅、格子定数、バンド間発光波長とノ（にン３りず
。In the attached table, some combinations of 1' conductors are shown in terms of forbidden width, lattice constant, and interband emission wavelength.
また、各半導体層３．４．５の製法は適宜の方法によっ
て良く、例えば、電子ビーム式、抵抗加熱式等による真
空蒸着法、ホットウォールエビタキシャＡｙ７’Ｊ２
（ＨＷＥ） 、分子線エピタキシャル法（ＭＢＥ）、Ｃ
ＶＤ法、ＭＯＣＶＤ法、原子層エピタキシャル法等が考
えられる。Further, each semiconductor layer 3.4.5 may be manufactured by an appropriate method, such as a vacuum evaporation method using an electron beam method, a resistance heating method, etc., a hot wall epitaxy Ay7'J2
(HWE), molecular beam epitaxial method (MBE), C
Possible methods include the VD method, MOCVD method, and atomic layer epitaxial method.
第３図は本発明半導体薄膜発光素子−の第２のものの実
施の一例を示すものである。FIG. 3 shows an example of implementation of the second semiconductor thin film light emitting device of the present invention.
この実施例における積層体７ａは外側に禁制帯幅の大き
い方の半導体から成る層３．３（稍厚く１００〜１００
０人）が配置され、その間に２２．ｆｉの半導体の混晶
材料から成る半導体薄ＩＩＩＡ層（厚さ１０〜２００人
）、即ち活性層４と禁制帯幅の大きい方の半導体から成
る層５（厚さ５０〜５００人）が交互に積層ｙれて成る
。In this embodiment, the laminate 7a has a layer 3.3 (slightly thick 100 to 100 mm thick) made of a semiconductor having a larger forbidden band width on the outside.
0 people) were placed, and 22. Semiconductor thin IIIA layers (10 to 200 layers thick) made of a mixed crystal material of a semiconductor of fi, that is, an active layer 4 and a layer 5 (50 to 500 layers thick) made of a semiconductor with a larger forbidden band width are alternately formed. It is made up of layers.
そして、活性層４１．４２．４３、・・・４ｎ各層を構
成する混晶材料の４昆晶比はそれぞれ変えられている。The active layers 41, 42, 43, . . . , 4n have different crystal ratios of mixed crystal materials constituting each layer.
例えば第４図に示すようにｌｈ！晶材料Ｚｎ５ｘＳｅ
＜ ｓ−Ｘ １（７）ｒｘＪの的を透明基板１側から０
．９．０．８−−−０．１と０．１きざみで変化させる
。そして、ＺｎＳ層、Ｚｎ５ｘＳ（１−ｘ）ともに層厚
２０ ’ＯＡとすると、３３９０人〜４６４０人の波長
範囲にわたる発光が得られる。For example, as shown in Figure 4, lh! Crystal material Zn5xSe
< s-X 1(7) Move the rxJ target from the transparent substrate 1 side to 0
．． 9.0.8---Vary in 0.1 increments of 0.1. If both the ZnS layer and Zn5xS(1-x) have a layer thickness of 20' OA, light emission over the wavelength range of 3390 to 4640 can be obtained.
このように、活性層４を複数層形成し、そして、その活
性層４を構成する混晶材料の混晶比をそれぞれ変化させ
ると、各活性層４における発光波長が異り、積層体７ａ
全体としては活性層４１．４２．４３、・・・４ｎ各層
の発光色の合成色による発光が得られる。In this way, when a plurality of active layers 4 are formed and the mixed crystal ratios of the mixed crystal materials constituting the active layers 4 are changed, the emission wavelength in each active layer 4 is different, and the laminate 7a
As a whole, light emission is obtained with a composite color of the light emission color of each of the active layers 41, 42, 43, . . . 4n.
発明の効累
以−１−に記載したどころから明らかなように、本発明
半導体薄膜発光素イのｔｆＪｌのものにおいては、禁制
帯幅の異なる２種の半導体材料を用い、禁制帯幅の大き
な方の半導体材料から成る半導体薄ＩＩ！２層の間に前
記２種の半導体の混晶材料から成る半導体層１１り層を
挟持状にした積層体を透明電極と背面電極との間に挟置
して成るので、禁制帯幅の小さな方の半導体薄膜層を構
成しているＩＦｉ’、晶材利とそのｌバー品比を適宜に
遊ぶことによって、ｂｒみの発光色を得ることができる
。更に、′亀子及びＦ［孔が禁制？ｔＦ幅の小さな方の
１“導体薄膜層に閉じ込められ、９２光再結合を１７易
くなるため、発光効率が増大し、従って、駆動１１丁を
ドげることがてきる。As is clear from the description in 1-1-, the semiconductor thin film light emitting device of the present invention, tfJl, uses two types of semiconductor materials with different forbidden band widths. Semiconductor thin II made of the same semiconductor material! A laminate in which a semiconductor layer 11 made of a mixed crystal material of the two types of semiconductors is sandwiched between the two layers is sandwiched between the transparent electrode and the back electrode, so that the forbidden band width is small. By appropriately controlling IFi', the crystal material ratio, and the ratio of the crystal materials constituting the semiconductor thin film layer, a blurred luminescent color can be obtained. Furthermore, 'Kameko and F [holes are prohibited? Since the light is confined in the 1" conductor thin film layer with the smaller tF width and 92 light recombination becomes easier, the light emitting efficiency increases and, therefore, the driving force can be reduced.
また、本発明半導体薄膜発光素子の第２のものにおいて
は、禁制帯幅の異なる２種の゛１６導体材料を用い、禁
制帯幅の大鼻な方の半導体材料から成る゛１′導体薄膜
層と前記２種の゛ＩＬ導体の混晶材料から成る半導体薄
膜層とを交Ｔｉに積層し、そして、１１コ晶材オニ１か
ら成る複数の半導体層１１り層の混晶比を変化させたの
で、それぞれ混晶比の異なる混晶材料による゛ＩＬ導体
薄膜層での発光色の合成色による発光が得られ、従って
、混晶材料とイＩ４品比の組り合わせを適宜にｆぷこと
により、好みの色の発光色を容具に１１することができ
る。Further, in the second semiconductor thin film light emitting device of the present invention, two types of 16 conductor materials having different forbidden band widths are used, and a 16 conductor thin film layer made of the semiconductor material with the larger forbidden band width is used. and a semiconductor thin film layer made of a mixed crystal material of the above two kinds of IL conductors were laminated on an crossed Ti layer, and the mixed crystal ratio of the plurality of semiconductor layers 11 and 11 made of a 11-co-crystalline material Oni 1 was varied. Therefore, it is possible to obtain light emission with a composite color of the emitted light color in the IL conductor thin film layer due to the mixed crystal materials having different mixed crystal ratios. This allows you to choose your favorite luminescent color for the container.
第１図及び第２図は本発明半導体ｆ＃膜発光素子の第１
のものの実施の一一例を示すもので、第１図はその模型
的側面図、へ′５２図は積層体の各層とエネルギー準位
の分布状態との関係を示し、（Ａ）は積層体を厚み方向
に薄くスライスして示す断面ＩＡ、（Ｂ）は（Ａ）に対
応して各層におけるエネルギー準位の分布を示す図、第
３図及び第４図は本発明半導体薄膜発光１子の第２のす
）のの実施の一例を示すもので、第３図は模型的側面図
、第４図は各層におけるエネルギー準位の分７１状態を
示す図である。
符号の説明
２・・・透明電極、 ３・・・禁制帯幅の大きな方の
半導体薄膜層、 ４・・・混晶材料からなる半導体薄
膜層、 ５・・・禁制帯幅の大きな方の半導体層ロタ
層、 ６・・・背面電極、７．７ａｅ−・積層体
出 願 人 株式会社 小糸製作所
（・竜図
１・２図
ローＬ工
わせ−’ｌ即
１・７１図
第４図1 and 2 show the first diagram of the semiconductor f# film light emitting device of the present invention.
Fig. 1 is a schematic side view of the laminate, Fig. Cross section IA is shown by slicing thinly in the thickness direction, (B) is a diagram showing the distribution of energy levels in each layer corresponding to (A), and FIGS. This shows an example of the implementation of the second step, in which FIG. 3 is a schematic side view and FIG. 4 is a diagram showing 71 states of energy levels in each layer. Explanation of symbols 2...Transparent electrode, 3...Semiconductor thin film layer with larger forbidden band width, 4...Semiconductor thin film layer made of mixed crystal material, 5...Semiconductor with larger forbidden band width Layer Rota layer, 6...Back electrode, 7.7ae-・Laminated body Applicant: Koito Seisakusho Co., Ltd.
Claims (2)
帯幅の大きな方の半導体材料から成る半導体薄膜層の間
に前記２種の半導体の混晶材料から成る半導体薄膜層を
挟持状にした積層体を透明電極と背面電極との間に挟置
して成ることを特徴とする半導体薄膜発光素子(1) Two types of semiconductor materials with different forbidden band widths are used, and a semiconductor thin film layer made of a mixed crystal material of the two semiconductors is sandwiched between a semiconductor thin film layer made of the semiconductor material with a larger forbidden band width. A semiconductor thin film light emitting device characterized in that the laminate is sandwiched between a transparent electrode and a back electrode.
帯幅の大きな方の半導体材料から成る半導体ン轡ｆＩｇ
：層と前記２種の半導体の混晶材料から成る゛ビ；導体
薄膜層とを交互に積層し、そして、４１ル晶材料から成
る複数の′１′、導体薄膜層の混晶比を変化ネせたこと
を特徴とする半導体薄膜発光素子(2) Semiconductor film fIg using two types of semiconductor materials with different forbidden band widths and consisting of the semiconductor material with the larger forbidden band width.
: layers and conductor thin film layers made of mixed crystal materials of the two types of semiconductors are alternately laminated, and the mixed crystal ratio of the conductor thin film layers is varied. Semiconductor thin film light emitting device characterized by a flattened surface
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156111A JPS5946073A (en) | 1982-09-08 | 1982-09-08 | Semiconductor thin film light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156111A JPS5946073A (en) | 1982-09-08 | 1982-09-08 | Semiconductor thin film light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5946073A true JPS5946073A (en) | 1984-03-15 |
Family
ID=15620547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57156111A Pending JPS5946073A (en) | 1982-09-08 | 1982-09-08 | Semiconductor thin film light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946073A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6269690A (en) * | 1985-09-24 | 1987-03-30 | Semiconductor Energy Lab Co Ltd | Light emitting semiconductor device |
| US5128728A (en) * | 1989-01-13 | 1992-07-07 | National Research Council Of Canada | Semiconductor superlattice infrared source |
| US5459337A (en) * | 1993-02-19 | 1995-10-17 | Sony Corporation | Semiconductor display device with red, green and blue emission |
-
1982
- 1982-09-08 JP JP57156111A patent/JPS5946073A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6269690A (en) * | 1985-09-24 | 1987-03-30 | Semiconductor Energy Lab Co Ltd | Light emitting semiconductor device |
| US5128728A (en) * | 1989-01-13 | 1992-07-07 | National Research Council Of Canada | Semiconductor superlattice infrared source |
| US5459337A (en) * | 1993-02-19 | 1995-10-17 | Sony Corporation | Semiconductor display device with red, green and blue emission |
| US5597740A (en) * | 1993-02-19 | 1997-01-28 | Sony Corporation | Semiconductor display device and a method of fabricating the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5055363A (en) | Electroluminescent device of compound semiconductor | |
| JP2008523615A (en) | Adaptive short wavelength LED for multicolor, broadband or "white" emission | |
| JP4270885B2 (en) | Oxide semiconductor light emitting device | |
| JPH0268968A (en) | Compound semiconductor light-emitting device | |
| JPH0342881A (en) | Light emitting element of compound semiconductor | |
| JPH03119760A (en) | Semiconductor element and manufacture thereof | |
| JPS5946073A (en) | Semiconductor thin film light emitting element | |
| US5872023A (en) | Method of fabricating of light emitting device with controlled lattice mismatch | |
| US5714014A (en) | Semiconductor heterojunction material | |
| JP2004260111A (en) | Semiconductor light-emitting element and semiconductor light-emitting device using the same | |
| JPH11233816A (en) | Semiconductor light emitting device and manufacture thereof | |
| JPS61222284A (en) | Light emitting element | |
| JP2002050795A (en) | InGaN LIGHT-EMITTING DIODE | |
| JP3228208B2 (en) | Semiconductor light emitting device and method of manufacturing the same | |
| JP4851648B2 (en) | Semiconductor components that generate mixed color electromagnetic radiation | |
| JPS5946071A (en) | Semiconductor thin film light emitting element | |
| JPH0412600B2 (en) | ||
| JPH03268360A (en) | Semiconductor device | |
| JP2007042771A (en) | P-type wide gap semiconductor | |
| JPS62154789A (en) | Semiconductor light emitting element | |
| TWI827271B (en) | Optoelectronic device | |
| KR100631968B1 (en) | Wavelength Converting Light Emitting Device | |
| JP3514542B2 (en) | Brightness modulation type diamond light emitting device | |
| JPH04299876A (en) | Semiconductor light emitting element material | |
| JPH04253381A (en) | Semiconductor light emitting element and manufacture thereof |