JPS5937640A - Liquid metal ion source - Google Patents
Liquid metal ion sourceInfo
- Publication number
- JPS5937640A JPS5937640A JP14765482A JP14765482A JPS5937640A JP S5937640 A JPS5937640 A JP S5937640A JP 14765482 A JP14765482 A JP 14765482A JP 14765482 A JP14765482 A JP 14765482A JP S5937640 A JPS5937640 A JP S5937640A
- Authority
- JP
- Japan
- Prior art keywords
- liquid metal
- ionization chamber
- ion source
- metal ion
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001338 liquidmetal Inorganic materials 0.000 title claims abstract description 47
- 239000000126 substance Substances 0.000 claims abstract description 23
- 150000002500 ions Chemical class 0.000 claims description 71
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims 1
- 230000008018 melting Effects 0.000 abstract description 8
- 238000002844 melting Methods 0.000 abstract description 8
- 230000005855 radiation Effects 0.000 abstract 1
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 16
- 239000007788 liquid Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はイオンマイクロアナライザ（ＩＭＡ）、イオン
打込機、イオンビーム描画装置などで使用される高輝度
な点状イオン源に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a high-brightness point ion source used in an ion microanalyzer (IMA), an ion implanter, an ion beam lithography device, and the like.
液体金属イオン源は高輝度な点状イオン源であり、イオ
ンビーム応用機器の性能向上に望ましいものである。こ
のイオン源の基本構造と動作原理は特開昭５２−１２５
９９８に詳述されている。液体金属イオン源の基本構造
は第１図に示すように、フィラメント１、針状チップ２
、およびイオン化する液体金属３から成る。真壁中でフ
ィラメント１を通電加熱する等の手段でイオン化物質を
液体状に保った状態で、針状チップ３が正に、これと対
向して設けた引出し電極４が戸になるような電圧を印加
すると、液体金属３で濡れた針状チップ３の先端から液
体金属成分のイオン５が放出されるものである。この型
の液体金属イオン源に訃いて、イオン化物質として要求
される第一条件は液体状態において蒸気圧が低いことで
ある。即ち、液体状態において蒸気圧が高いと蒸発によ
ってイオン化物質が飛散してイオン源の寿命が短かくな
ったり、著しい場合には真空中で液体状態を安定に保持
することができず、イオンを放出させることも不可能に
なる。さらに蒸発が著しいと蒸発物質がイオン源周辺の
部品に付着して、絶縁耐圧の低下といった問題も生ずる
。Liquid metal ion sources are high-brightness point ion sources that are desirable for improving the performance of ion beam application equipment. The basic structure and operating principle of this ion source is disclosed in Japanese Patent Application Laid-Open No. 52-125.
998. The basic structure of a liquid metal ion source, as shown in Figure 1, consists of a filament 1 and a needle tip 2.
, and an ionizing liquid metal 3. While the ionized substance is kept in a liquid state by heating the filament 1 with electricity in a wall, a voltage is applied such that the needle-shaped tip 3 is directly connected to the extraction electrode 4 provided opposite to it. When the voltage is applied, ions 5 of the liquid metal component are released from the tip of the needle tip 3 wetted with the liquid metal 3. For this type of liquid metal ion source, the first requirement for the ionizing material is a low vapor pressure in the liquid state. In other words, if the vapor pressure is high in the liquid state, ionized substances may scatter due to evaporation, shortening the life of the ion source, or in extreme cases, the liquid state cannot be stably maintained in a vacuum, and ions may be emitted. It becomes impossible to do so. Furthermore, if the evaporation is significant, the evaporated substances will adhere to parts around the ion source, causing problems such as a reduction in dielectric strength.
Ｓ＋半導体工４分野でイオン打込種として重要な元素に
、ｐ、Ａｓ、 Ｓｂなどがある。これらの元素の融点に
おける蒸気圧は、Ｐ （＞ １０” Ｔｏｒｒ）、Ａ
ｓ （＞１０” Ｔｏｒｒ ） Ｓ ｂ （〜１０”
Ｔｏｒｒ ）と高いため、例えばＮｉ−１９ａｔ％Ｐ、
Ｐｉ−２８ａｔ％Ａｓ のように合金をンることによ
ってＰ。Elements that are important as ion implantation species in the four S+ semiconductor engineering fields include p, As, and Sb. The vapor pressures at the melting point of these elements are P (> 10” Torr), A
s (>10” Torr) S b (~10”
Torr ), for example, Ni-19at%P,
P by alloying it like Pi-28at%As.
ＡＳなどの蒸気圧を下げて液体金属イオン源のイオン化
物質として使用するなどの工夫がなされている。しかし
合金化していてもＰ、Ａｓ； Ｓｂなどは蒸発し易いた
め、イオン源の動作時間の経過とともに液体合金中のＰ
、Ａｓ、Ｓｂの割合が減少してくるという問題がある。Efforts have been made to lower the vapor pressure of AS, etc., and use it as an ionizing substance in liquid metal ion sources. However, even if they are alloyed, P, As;
There is a problem that the proportions of , As, and Sb are decreasing.
液体金属イオン源用のイオン化物質としては、融点にお
ける蒸気圧が１Ｏ−４Ｔｏｒｒ 以下、さらに望ましく
は１０−６’ｌ’ｏｒｒ以下であることが必要である。The ionizing substance for the liquid metal ion source needs to have a vapor pressure at the melting point of 10-4 Torr or less, more preferably 10-6'l'orr or less.
本発明は、融点において比較的高い蒸気圧（１０”〜ｌ
’ｐｏｒｒ）を持つ物質を安定にイオン化できる液体金
属イオン源を提供することを第一の目的とし、１０−”
ｌ’ｏｒｒ以下の蒸気圧を持つ物質をイオン化物質とし
て用いる場合においては、寿命およびイオン源の信頼性
が大幅に改善された液体金属イオン源を提供することを
第二の目的とするものである。The present invention has a relatively high vapor pressure at the melting point (10" to 1
Our primary objective is to provide a liquid metal ion source that can stably ionize substances with 10-"
A second objective is to provide a liquid metal ion source with significantly improved lifetime and ion source reliability when a substance with a vapor pressure of less than l'orr is used as an ionizing substance. .
以下、本発明の原理について説明する。 The principle of the present invention will be explained below.
物質を真空中で加熱溶融すると、その溶融点にも・ける
蒸気圧に依存して物質の蒸発が起こる。例えばＡｇは、
その融点（１２３４Ｋ）にも・いて、約３ Ｘ １０”
” Ｔｏｒｒの蒸気圧を示し、Ａｇを１０−６’ｌ’ｏ
ｒｒ台の真空中で溶融すると、時間の経過につれて全て
蒸発してし筐う。この蒸発を抑えるためには、真空中に
ガスを１０−” Ｔｏｒｒ程度導入することが有効であ
る。すなわち、物質の蒸気圧以上のガス圧に保つことに
より、物質の自然蒸発を低下させることができる。この
基本原理を液体金属イオン源に適用することにより、イ
オン化物質の蒸発を抑えることが可能となる。第２図は
、この点を考慮した、より蒸気圧の高いイオン化物質の
使用を可能ならしめる液体金属イオン源の基本構造を示
すものである。第２図において、６はイオン化室、７は
イオン取出しと真空排気を兼ねた小孔、８はガス導入パ
イプ、９はニードルパルプ、１０はガスボンベである。When a substance is heated and melted in a vacuum, evaporation of the substance occurs depending on the vapor pressure above its melting point. For example, Ag is
Its melting point (1234K) is about 3 x 10"
” indicates the vapor pressure of Torr, Ag is 10-6'l'o
When it is melted in the vacuum of an RR table, it all evaporates over time and remains in the housing. In order to suppress this evaporation, it is effective to introduce a gas of about 10-'' Torr into the vacuum.In other words, by keeping the gas pressure higher than the vapor pressure of the substance, it is possible to reduce the natural evaporation of the substance. By applying this basic principle to a liquid metal ion source, it is possible to suppress the evaporation of ionized substances. Figure 2 shows that, taking this point into consideration, it is possible to use ionized substances with higher vapor pressure. This figure shows the basic structure of a liquid metal ion source for conditioning. In Fig. 2, 6 is an ionization chamber, 7 is a small hole that serves both for ion extraction and vacuum evacuation, 8 is a gas introduction pipe, 9 is a needle pulp, and 10 is a gas cylinder.
小孔７の直径は通常０．１〜５陥φ程度である。イオン
化室６と高真空側がこの小孔７によって接続されている
。イオン化室６にはニードルバルブを通じて任意の圧力
のガスを導入できるようになっており、イオン化室６内
のガスは小孔７を通じて差動排気できる構造となってい
る。この差動排気作用によってイオン化室内のガス圧を
高真空側に比べて高く保つことができる。The diameter of the small hole 7 is usually about 0.1 to 5 indentations. The ionization chamber 6 and the high vacuum side are connected through this small hole 7. Gas at any pressure can be introduced into the ionization chamber 6 through a needle valve, and the gas in the ionization chamber 6 can be differentially pumped out through small holes 7. This differential pumping action allows the gas pressure in the ionization chamber to be maintained higher than that on the high vacuum side.
液体金属イオン源の動作時にはイオン化室内のガス圧力
をグロー放電が生じない圧力範囲で上昇させて動作させ
ることにより、イオン化物質の液体金属の一蒸発を抑え
、長時間、安定なイオン放射を実現ならしめることがで
きる。上昇可能な圧力は１０−２〜１Ｏ−ＩＴｏｒｒ程
度である。これ以上の圧力下では針状チップに電圧を印
加した時にグロー放電が起こり、安定なイオン放射が不
可能になる。導入するガスとしては、Ｈ，、Ｈｅ、Ｎｅ
。When operating a liquid metal ion source, the gas pressure inside the ionization chamber is increased within a pressure range that does not cause glow discharge, thereby suppressing evaporation of the liquid metal in the ionized substance and achieving stable ion emission for a long period of time. It can be tightened. The pressure that can be increased is about 10-2 to 1 O-ITorr. If the pressure is higher than this, glow discharge will occur when voltage is applied to the needle tip, making stable ion emission impossible. The gases to be introduced include H, He, Ne.
.
Ａ ｒ ） Ｋ ｒ＋ Ｎｚ ＊などが可能である。A r ) K r + Nz *, etc. are possible.
この構成の液体金属イオン源では、イオン化室のガス圧
力を１Ｏ−１Ｔｏｒｒ程度まで上昇して動作させること
ができるので、従来のタイプの液体金属イオン源では安
定なイオン放射を得ることができなかった蒸気圧の高い
金属元素イオンも容易に得ることができるようになる。A liquid metal ion source with this configuration can be operated by increasing the gas pressure in the ionization chamber to about 10-1 Torr, which makes it impossible to obtain stable ion emission with conventional liquid metal ion sources. Metal element ions with high vapor pressure can also be easily obtained.
また、Ｎ１−Ｐ。Also, N1-P.
Ｐｔ−Ａｓなどに訃けるＰ、Ａｓのように高蒸気圧元素
を含む液体合金の場合、時間とともに高蒸気圧元素の割
合が減少するのを防ぐことができる。In the case of a liquid alloy containing high vapor pressure elements such as P and As, which are similar to Pt-As, it is possible to prevent the proportion of the high vapor pressure elements from decreasing over time.
さらに、従来のタイプの液体金属イオン源で用いていた
イオン化物質を使用した場合では、蒸発によるイオン源
近傍の汚染を大幅に低減することができ、イオン源の寿
命と信頼性を向上させることができる。イオン化室に導
入するガスの種類を適轟に選択することにより、望まし
い効果を発揮せしめることも可能である。例えば、液体
金属の表面に酸化被覆が形成され易い場合にはＮ２など
の還元性ガスを導入することにより酸化被覆の形成を肋
止できるため、針状チップ表面での液体金属の流れが滑
らかになシ、この結果として安定なイオン放射が実現芒
れ得る。Furthermore, when using the ionizable materials used in conventional liquid metal ion sources, contamination near the ion source due to evaporation can be significantly reduced, increasing the lifespan and reliability of the ion source. can. By appropriately selecting the type of gas introduced into the ionization chamber, it is possible to achieve the desired effect. For example, if an oxide coating is likely to form on the surface of the liquid metal, the formation of the oxide coating can be prevented by introducing a reducing gas such as N2, so that the liquid metal flows smoothly on the surface of the needle tip. As a result, stable ion emission can be realized.
以下、本発明を実施例にもとづいて説明する。 Hereinafter, the present invention will be explained based on examples.
実施例１
本実施例は、融点において比較的高い蒸気圧（１０”〜
１０’Ｉ’ｏｒｒ）を持つ純金属をイオン化物質として
用いた場合、イオン源として安定に動作するかどうかを
、従来型の液体金属イオン源と本発明によるイオン化室
を持つ液体金属イオン源で実験比較を行なった結果に関
するものである。従来型の液体金属イオン源は第１図に
示した構造のものを、本発明による液体金属イオン源は
第２図に示した構造のものを使用した。液体金属の加熱
温度は（融点）＋（３０〜１００Ｋ）とした。従来型の
イオン源の動作雰囲気は１０−’ Ｔｏｒｒの真空とし
、本発明によるイオン源では真空、側は１０−６’ｆｏ
ｒｒとしイオン化室にはＮ２ガスを１０−４〜ＩＴＯｒ
ｒの範囲で導入した。各イオン源に督いてフィラメント
材および針状チップ材としてＷを使用した。なお、Ｗと
ぬれ性の悪い金属（Ａｇ、Ａ、ｕ）ではＷの代りにＮｉ
を用いた。表１にイオン化す体金属イオン源として安定
に動作した場合を、Δ印は安定性に問題はあるがイオン
源として動作可能な場合を、Ｘ印はイオン源として動作
不可能である場合を示す。本発明による液体金属イオン
源ではイオン化室のＨ，ガス圧力もあわせて示した。Example 1 This example demonstrates a relatively high vapor pressure at the melting point (10”~
Experiments were conducted using a conventional liquid metal ion source and a liquid metal ion source with an ionization chamber according to the present invention to determine whether it operates stably as an ion source when a pure metal with 10'I'orr) is used as an ionizing substance. This relates to the results of the comparison. A conventional liquid metal ion source having the structure shown in FIG. 1 was used, and a liquid metal ion source according to the present invention had the structure shown in FIG. 2. The heating temperature of the liquid metal was (melting point) + (30 to 100K). The operating atmosphere for conventional ion sources is a vacuum of 10-' Torr, and for the ion source according to the present invention, the atmosphere is 10-6' torr.
rr, and the ionization chamber is filled with N2 gas at 10-4~ITOr.
It was introduced in the range of r. W was used as the filament material and needle-like tip material for each ion source. In addition, for metals (Ag, A, u) that have poor wettability with W, Ni is used instead of W.
was used. Table 1 shows cases in which the ionizing body operates stably as a metal ion source, Δ marks indicate cases in which there is a stability problem but can operate as an ion source, and X marks indicate cases in which it cannot operate as an ion source. . In the liquid metal ion source according to the present invention, H and gas pressure in the ionization chamber are also shown.
表１より明らかなように、本発明による液体金属イオン
源を用いることによって従来型の液体金属イオン源では
安定なイオンビームが得難い金属でも容易にイオン化が
できることが確認された。As is clear from Table 1, it was confirmed that by using the liquid metal ion source according to the present invention, even metals for which it is difficult to obtain a stable ion beam with conventional liquid metal ion sources can be easily ionized.
実施例２ 実施例１と同様な液体金属イオン源を用いて、Ｐｉ？。Example 2 Using the same liquid metal ion source as in Example 1, Pi? .
Ａｓ３゜合金のイオンを発生させ、時間の経過につれて
Ａｓイオンの強度が変化する様子を測定した。ここでは
フィラメントおよび針状チップ材料にはＰｔ−Ａｓ合金
液体に浸蝕され難い炭素を用い、イオン化室内への導入
ガスとして１０−８’ｌ’ｏｒｒの）（ｅを使用した。Ions of As3° alloy were generated, and changes in As ion intensity over time were measured. Here, carbon, which is not easily corroded by the Pt--As alloy liquid, was used for the filament and the needle-like tip material, and 10-8'l'orr) (e) was used as the gas introduced into the ionization chamber.
これ以外の実験条件は実施例１と同一とした。第３図に
Ａｓイオン強度の時間変化を、従来型の液体金属イオン
源と本発明による液体金属イオン源について比較して示
す。Other experimental conditions were the same as in Example 1. FIG. 3 shows a comparison of changes in As ion intensity over time for a conventional liquid metal ion source and a liquid metal ion source according to the present invention.
第３図においてａが従来型の液体金属イオン源のＡｓイ
オン強度の経時変化、ｂが本発明による液体金属イオン
源のＡｓイオン強度の経時変化である。第３図では初期
のＡｓイオン強度を１として示しである。この図より明
らかなように、本発明による液体イオン源ではＡｓイオ
ン強度の時間変化が極めて小さくなっていることかわあ
する。In FIG. 3, a shows the change over time in the As ion intensity of the conventional liquid metal ion source, and b shows the change over time in the As ion intensity in the liquid metal ion source according to the present invention. In FIG. 3, the initial As ion strength is assumed to be 1. As is clear from this figure, in the liquid ion source according to the present invention, the time change in the As ion intensity is extremely small.
同様の効果は、Ｐｔ Ｐ、Ｎ１−Ｐ、 Ｎｉ−８ｂ合
金を用いた場合のｐ、ｓｂイオン強度に関しても観測さ
れた。Similar effects were also observed regarding p and sb ion strengths when using PtP, N1-P, and Ni-8b alloys.
本発明による液体金属イオン源では、高い蒸気圧を持つ
元素を含む液体合金をイオン化物質として用いた場合に
督いて、高蒸気圧元素が蒸発によって脱離するのを抑制
できる効果があり、一定の強度のイオンビームを長時間
安定に得ることができることがわかった。In the liquid metal ion source according to the present invention, when a liquid alloy containing an element with a high vapor pressure is used as an ionizing substance, there is an effect of suppressing the desorption of the high vapor pressure element by evaporation. It was found that a strong ion beam can be stably obtained for a long time.
また、本発明による液体金属イオン源ではイオン化物質
の蒸発が抑えられるので、イオン化物質によるイオン化
室内の汚染、あるいは真空装置内の汚染が低減されるこ
とも確認された。It has also been confirmed that the liquid metal ion source according to the present invention suppresses evaporation of the ionized substance, thereby reducing contamination in the ionization chamber or in the vacuum apparatus due to the ionized substance.
さらにまた、使用できるイオン種を拡大できることも明
らかとなった。Furthermore, it has also become clear that the range of ion species that can be used can be expanded.
第１図は従来の液体金属イオン源の構成を示す図、第２
図は本発明による液体金属イオン源の構成を示す図、第
３図はｐｔｌＡｓ３゜合金をイオン化物質として使用し
たときのＡ’ｓイオン強度の時間変化を従来型と本発明
による液体金属イオン源で比較して示した図である。
１・・・フィラメント、２・・・針状チップ、３・・・
液体金属、４・・・引出し電極、５・・・イオン、６・
・・イオン化室、７・・・小孔、８・・・ガス導入パイ
プ、９・・・ニード第 １ 図
ｔ 〜
第 ２ 区
；；−５
子 ３ 図
イ
ン「
光
度
庁
遣１Ｆ
已Figure 1 shows the configuration of a conventional liquid metal ion source, Figure 2 shows the configuration of a conventional liquid metal ion source.
The figure shows the configuration of the liquid metal ion source according to the present invention, and Figure 3 shows the time change in A's ion intensity when ptlAs3° alloy is used as the ionizing substance in the conventional liquid metal ion source and the liquid metal ion source according to the present invention. It is a diagram shown in comparison. 1... filament, 2... needle tip, 3...
liquid metal, 4... extraction electrode, 5... ion, 6...
...Ionization chamber, 7...Small hole, 8...Gas introduction pipe, 9...Need 1st - 2nd ward;
Claims (1)
端を濡らし、その先端から強電界によってイオンを引出
す液体金属イオン源において、針状チップを収納するイ
オン化室を設け、かつこのイオン化室を高真空系と小孔
でもって接続してかき、該イオン化室に別に接続せられ
たパイプを通じてガスを導入し、イオン化室内のガス圧
力を小孔を通じての差動排気作用によって真空排気系に
比べて高い圧力に保つことによシ、イオン化物質の液体
金属の蒸発を抑制できることを特徴とする液体金属イオ
ン源。1. In a liquid metal ion source in which the tip of a needle tip is wetted with a molten metal substance to be ionized and ions are extracted from the tip using a strong electric field, an ionization chamber is provided to house the needle tip, and this ionization chamber is kept under high vacuum. The ionization chamber is connected to the system through a small hole, and gas is introduced through a pipe separately connected to the ionization chamber, and the gas pressure inside the ionization chamber is raised to a higher pressure than in the vacuum pumping system by differential pumping action through the small hole. A liquid metal ion source characterized in that evaporation of an ionized substance liquid metal can be suppressed by maintaining the liquid metal at a constant temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14765482A JPS5937640A (en) | 1982-08-27 | 1982-08-27 | Liquid metal ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14765482A JPS5937640A (en) | 1982-08-27 | 1982-08-27 | Liquid metal ion source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5937640A true JPS5937640A (en) | 1984-03-01 |
Family
ID=15435235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14765482A Pending JPS5937640A (en) | 1982-08-27 | 1982-08-27 | Liquid metal ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5937640A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013043794A3 (en) * | 2011-09-22 | 2013-08-01 | Carl Zeiss Nts, Llc | Liquid metal ion source, system and method |
| US9218934B2 (en) | 2013-07-08 | 2015-12-22 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
-
1982
- 1982-08-27 JP JP14765482A patent/JPS5937640A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013043794A3 (en) * | 2011-09-22 | 2013-08-01 | Carl Zeiss Nts, Llc | Liquid metal ion source, system and method |
| US9218934B2 (en) | 2013-07-08 | 2015-12-22 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9218935B2 (en) | 2013-07-08 | 2015-12-22 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9530612B2 (en) | 2013-07-08 | 2016-12-27 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9530611B2 (en) | 2013-07-08 | 2016-12-27 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9536699B2 (en) | 2013-07-08 | 2017-01-03 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9627172B2 (en) | 2013-07-08 | 2017-04-18 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9640364B2 (en) | 2013-07-08 | 2017-05-02 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
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