JPS5933536B2 - Compound having hexagonal layered structure represented by LuGaMnO↓4 and method for producing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a novel compound, LuGaMnO4, having a hexagonal layered structure and a method for producing the same.

Conventionally, a compound having a hexagonal layered structure represented by YFe, 04 is known.

This compound is a compound in which divalent and trivalent iron ions are surrounded by five-coordinated oxygen ions, and Y has six-coordinated oxygen ions around it, as shown by Y3+Fe2+Fe3+01-. It has magnetism. The present invention provides a novel compound in which Y3+ is replaced by Lu3+, Fe2+ is replaced by Mn'+, and Fe°+ is replaced by Ga°+ in the Y3+Fe2+Fe3+OH- compound, and a method for producing the same. LuGaM of the present invention
In the compound indicated by n04, lutetium exists as a Lu3+ ion, manganese exists as a Mn2+ ion, gallium exists as a trivalent ion, and Lu3+Ga3+Mn
It can be expressed as 2+01-.

This crystal has a hexagonal layered structure as shown in FIG. The largest circle is oxygen, the middle circle is Lu, and the smallest black circle is Ga.
and Mn. Ga and Mn are entered randomly. The divalent ions of manganese and the trivalent ions of gallium are surrounded by five-coordinated oxygen ions and occupy the same position crystallographically. Moreover, Lu has six-coordinated oxygen around it. Oxygen, an anion, has a dense structure.
Table 1 shows the plane index (hkl), plane spacing (dλ) (do indicates actual measurement, dc indicates calculated value), and relative reflection intensity (I%) for X-rays of this crystal.

The space group is R3″m, the crystal habit is plate-like, and the lattice constant is as follows: a0=3.4273±O, 00
01 (λ) c0 = 25.824 ± O, 002 (λ) 1st
Table LuGaMn04 This compound is useful as a catalytic material as well as a semiconductor material.

This compound can be produced by the following method.

Lutetium oxide (LU2O3). Manganese oxide (M
nO) and gallium oxide (Ga2O3) in a molar ratio of approximately 1:2:1, and heating the mixture at a temperature of 900°C or higher in a non-oxidizing atmosphere. can. Commercially available lutetium oxides used in the present invention may be used as they are, but in order to speed up the reaction between the oxides, the smaller the particle size, the better, particularly preferably 10 μm or less.

When used as a semiconductor material, since contamination with impurities is to be avoided, the raw material should preferably be of high purity and should have been calcined in air at about 1000° C. for several hours. Manganese oxide of ordinary reagent grade level may be used.

The particle size is 10 μm for the same reason as the lutetium oxide mentioned above.
It is preferable that it is below. Also, 1f at 1000℃]
Preferably, the mixture is calcined in a mixed gas of carbon dioxide and hydrogen (mixing ratio: 1:1) and then rapidly cooled to 7.0°C, since the reaction speeds up. The gallium oxide may be of special reagent grade. As mentioned above, the particle size is preferably 10 μm or less. Moreover, it is preferable to calcined in air at 800° C. for one day. These raw materials are thoroughly mixed as they are or with alcohol, acetone, etc. added. These mixing ratios are LU2O3, MnO, . The molar ratio of Ga2O3 is 1:2:1. If this ratio is exceeded, the desired layered compound cannot be obtained. These mixtures are sealed in a quartz or platinum container and heated under a non-oxidizing atmosphere.

Since manganese is in a divalent state, in an oxidizing atmosphere (for example, in the atmosphere), manganese will be oxidized and become trivalent, so it is necessary to be in a non-oxidizing atmosphere. The heating temperature may be 900°C or higher, and the heating time is 10 minutes or more, preferably 1 hour or more. There are no restrictions on the rate of temperature increase during heating. After the reaction is completed, it may be rapidly cooled to 0°C or rapidly drawn out into the atmosphere. The obtained LuGaMnO4 compound has a black metallic luster and is powder X.
It was found by line diffraction that it has a crystalline structure.

The valence of manganese ions in the compound was determined by gravimetric analysis, which measures the change in weight of the sample when it is heated in air. Example Lutetium oxide (LU2O3) powder with a purity of 99.9% or more, manganese oxide (MnO) powder with a purity of 99.9% or more, and gallium oxide (Ga2O3) powder with a purity of 99.9% or more in a molar ratio of 1 The mixture was weighed at a ratio of 2:1, and acetone was added in a mortar and mixed thoroughly to obtain a fine powder mixture with an average particle size of several μm.

The mixture was placed in a platinum tube (inner diameter 8 mm) and sealed by electric welding. This was placed in a box-shaped siliconite furnace set at 1000°C and heated for about 4 days, after which the sample was taken out and rapidly cooled to room temperature. What was obtained was Lu
It was a hexagonal layered compound of GaMnO4. The properties of the crystal were as shown in Table 1.

[Brief explanation of the drawing]

The drawing is a diagram of a LuGaMnO4 crystal of the present invention.

Claims (1)

[Claims] 1. A compound having a hexagonal layered structure represented by LuGaMnO_4. 2 Lutetium oxide (Lu_2O_3), manganese oxide (MnO) and gallium oxide (Ga_2O_3
) in a molar ratio of approximately 1:2:1, and this mixture is heated at a temperature of 900°C or higher in a non-oxidizing atmosphere. A method for producing a compound having