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JPS59179352U - semiconductor pressure sensor - Google Patents

semiconductor pressure sensor

Info

Publication number
JPS59179352U
JPS59179352U JP7358783U JP7358783U JPS59179352U JP S59179352 U JPS59179352 U JP S59179352U JP 7358783 U JP7358783 U JP 7358783U JP 7358783 U JP7358783 U JP 7358783U JP S59179352 U JPS59179352 U JP S59179352U
Authority
JP
Japan
Prior art keywords
pressure sensor
semiconductor pressure
substance
gel
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7358783U
Other languages
Japanese (ja)
Inventor
義典 山下
健二 深瀬
高浜　圀彦
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP7358783U priority Critical patent/JPS59179352U/en
Publication of JPS59179352U publication Critical patent/JPS59179352U/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は半導体圧力センサの典型例を示す断面図、第２
図は本考案の一実施例を示す断面図である。Figure 1 is a sectional view showing a typical example of a semiconductor pressure sensor, Figure 2 is a cross-sectional view showing a typical example of a semiconductor pressure sensor.
The figure is a sectional view showing an embodiment of the present invention.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 感圧素子を備えたシリコンダイヤフラムを基台に固着し
てなる半導体圧力センサにおいて、上記シリコンタイヤ
フラムの表面をゲル状物質で被覆すると共に、上記ゲル
状物質の表面にゴム状物質を積層形成せしめたことを特
徴とする単導体圧力センサ。In a semiconductor pressure sensor comprising a silicon diaphragm having a pressure-sensitive element fixed to a base, the surface of the silicon tire flam is coated with a gel-like substance, and a rubber-like substance is laminated on the surface of the gel-like substance. A single conductor pressure sensor characterized by:
JP7358783U 1983-05-16 1983-05-16 semiconductor pressure sensor Pending JPS59179352U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7358783U JPS59179352U (en) 1983-05-16 1983-05-16 semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7358783U JPS59179352U (en) 1983-05-16 1983-05-16 semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS59179352U true JPS59179352U (en) 1984-11-30

Family

ID=30203702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7358783U Pending JPS59179352U (en) 1983-05-16 1983-05-16 semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS59179352U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221031A (en) * 1985-07-19 1987-01-29 Citizen Watch Co Ltd Pressure sensor unit
JP2015025769A (en) * 2013-07-29 2015-02-05 ビフレステック株式会社 Test body information detection unit, test body information processing apparatus, and method of manufacturing test body information detection unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221031A (en) * 1985-07-19 1987-01-29 Citizen Watch Co Ltd Pressure sensor unit
JP2015025769A (en) * 2013-07-29 2015-02-05 ビフレステック株式会社 Test body information detection unit, test body information processing apparatus, and method of manufacturing test body information detection unit

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