JPS5916160U - Storage device - Google Patents
Storage deviceInfo
- Publication number
- JPS5916160U JPS5916160U JP1982109343U JP10934382U JPS5916160U JP S5916160 U JPS5916160 U JP S5916160U JP 1982109343 U JP1982109343 U JP 1982109343U JP 10934382 U JP10934382 U JP 10934382U JP S5916160 U JPS5916160 U JP S5916160U
- Authority
- JP
- Japan
- Prior art keywords
- storage device
- nitride film
- abstract
- layer
- cvdsi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図から第５図までは本考案の一実施例の製造工程を
示す断面図、第６図は同じ〈実施例構造の断面図である
。
１・・・・・・ケイ素単結晶基板、２． ６． ７・・
四酸化ケイ素層、３・・・・・・熱窒化による窒化ケイ
素層、４・・・・・・窒化ケイ素層、５．８・・・・・
・低抵抗率の多結晶ケイ素層、９．１０・・・・・・高
濃度Ｎ型領域、１１−・・・・・リンガラス層、１２・
・・・・・金属電極。1 to 5 are cross-sectional views showing the manufacturing process of an embodiment of the present invention, and FIG. 6 is a cross-sectional view of the same embodiment structure. 1...Silicon single crystal substrate, 2. 6. 7...
Silicon tetroxide layer, 3...Silicon nitride layer by thermal nitriding, 4...Silicon nitride layer, 5.8...
・Low resistivity polycrystalline silicon layer, 9.10... High concentration N type region, 11-... Phosphorus glass layer, 12.
...Metal electrode.
Claims (1)
用容量の誘電体物質としてＣＶＤＳｉ窒化膜／Ｓｉ熱窒
化膜なる二層膜を用いることを特徴とする記憶装置。A transistor memory cell type memory device characterized in that a two-layer film of CVDSi nitride film/Si thermal nitride film is used as a dielectric material of a charge storage capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982109343U JPS5916160U (en) | 1982-07-21 | 1982-07-21 | Storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1982109343U JPS5916160U (en) | 1982-07-21 | 1982-07-21 | Storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5916160U true JPS5916160U (en) | 1984-01-31 |
Family
ID=30254746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1982109343U Pending JPS5916160U (en) | 1982-07-21 | 1982-07-21 | Storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5916160U (en) |
-
1982
- 1982-07-21 JP JP1982109343U patent/JPS5916160U/en active Pending
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