JPS59158572A - Manufacture of solar cell - Google Patents
Manufacture of solar cellInfo
- Publication number
- JPS59158572A JPS59158572A JP58032374A JP3237483A JPS59158572A JP S59158572 A JPS59158572 A JP S59158572A JP 58032374 A JP58032374 A JP 58032374A JP 3237483 A JP3237483 A JP 3237483A JP S59158572 A JPS59158572 A JP S59158572A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- nitride film
- windows
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 150000004767 nitrides Chemical class 0.000 claims abstract description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910000679 solder Inorganic materials 0.000 claims abstract description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 238000005476 soldering Methods 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000001947 vapour-phase growth Methods 0.000 abstract description 2
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 230000004907 flux Effects 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔背景技術〕 第１図乃至第５図は従来の太陽電池の製造方法である。[Detailed description of the invention] [Background technology] 1 to 5 show a conventional solar cell manufacturing method.
従来にあっては、太陽電池を表面にｆ層を形成せるウェ
ハ（ン基板）（１）上に第２図の如くナイトライド（５
１３＝＼・４）膜（２）を形成して反射防止膜とし、該
ナイトライド膜（２）に第３図の如く窓Ｃろ）を開設し
、第４図の如く該窓（ろ）内にアルミニウムの電極（４
）を形成し、第５図の如く該電極（４）の表面に半田（
５）を付けて形成している。Conventionally, as shown in Fig. 2, nitride (50%
13=\・4) A film (2) is formed to serve as an anti-reflection film, a window (C) is opened in the nitride film (2) as shown in Fig. 3, and a window (C) is formed as shown in Fig. 4. There are aluminum electrodes (4
) and solder (
5).
しかるに電極窓明工程においてナイトライド膜のエツチ
ングは該ナイトライド膜（２）上にレジスト膜（図示略
）を形成し、１６０℃の熱燐酸を使用して行なっている
がレジストの耐熱性に問題があり、エツチング途中にレ
ジストの剥離が起こりエツチングがおこないにくい欠点
がある。またアルミニウムの電極（４１上への半田付工
程番こおいては半田付の際（半田伺温度５５０° ）に
、フラックスが炭化し、ナイトライド膜（反射防止膜）
（２１Ｊ−に残り太陽電池の性能を著しく低下させる欠
点かある。However, in the electrode window brightening process, the nitride film is etched by forming a resist film (not shown) on the nitride film (2) and using hot phosphoric acid at 160°C, but there is a problem with the heat resistance of the resist. However, there is a drawback that the resist peels off during etching, making it difficult to perform etching. In addition, during the soldering process on the aluminum electrode (41) (soldering temperature 550°), the flux carbonizes and forms a nitride film (anti-reflection film).
(21J- has a drawback that it significantly reduces the performance of the solar cell.
この発明は上記の点に鑑みてなされたもので、太陽電池
反射防止膜（ナイトライド（Ｓｉ３Ｎ４）膜）上に常圧
ＣＶＤにより酸化膜を形成しこれをマスクとして使用す
ることにより電極窓明は工程を容易にし、かつ電極形成
後の半田付の際に生じるフラックスによる反射防止膜の
汚れを除去することができる太陽電池の製造方法を提供
することを目的とする。This invention was made in view of the above points, and by forming an oxide film on the solar cell antireflection film (nitride (Si3N4) film) by normal pressure CVD and using this as a mask, the electrode window brightness can be reduced. It is an object of the present invention to provide a method for manufacturing a solar cell that facilitates the process and can remove stains on an antireflection film caused by flux generated during soldering after electrode formation.
この発明の要旨とするところはウェハ（基板）（１）」
二にナイトライド膜（２）を形成し、該ナイトライド膜
（２）上に酸化膜（６）を形成し、該酸化膜（６）にバ
ッファフッ酸を使用するエツチングにより窓（イ）を開
口し、該窓（私を介して熱リン酸を使用するエツチング
によりナイトライド膜（２）に窓（ろ）を開設し２、こ
れらの窓（ｇ＋、 （ｓ＋を介してウェハ（１）上に電
極（４）を形成し、該電極（４）に半田（５）を刊け、
しかる後にバッファフッ酸により酸化膜（６）を除去す
ることを特徴とする太陽電池の製造方法である。The gist of this invention is wafer (substrate) (1).
Second, a nitride film (2) is formed, an oxide film (6) is formed on the nitride film (2), and a window (a) is formed on the oxide film (6) by etching using buffered hydrofluoric acid. Open windows (fil) in the nitride film (2) by etching using hot phosphoric acid through the windows (g+, (s+) on the wafer (1) through these windows (g+, (s+)). forming an electrode (4) on the electrode (4), applying solder (5) to the electrode (4);
This method of manufacturing a solar cell is characterized in that the oxide film (6) is then removed using buffered hydrofluoric acid.
以下この発明を第６図乃至第１２図に示ず一実施例に基
づき説明する。This invention will be explained below based on one embodiment not shown in FIGS. 6 to 12.
表面にＮ”Ｅ＋を形成せるウニ／Ｓ（Ｐ基板）（１）上
にナイトライド膜（反射防止膜）（２）を形成するとこ
ろまでの工程は従来と同じである。第６図及び第７図は
この状態を示す。The steps up to forming a nitride film (anti-reflection film) (2) on the Urchin/S (P substrate) (1) on which N"E+ is formed on the surface are the same as the conventional process. Figures 6 and 6 Figure 7 shows this state.
常に第８図に示す如く、ナイトライド膜（２）上に常圧
ＣＶ Ｄ法（化学反応を伴う気相成長）により厚さ５０
００人程度までの硬化膜（Ｓｉｏ２）（６１を形成する
。As shown in Figure 8, the nitride film (2) is always coated with a thickness of 50 mm by atmospheric pressure CVD method (vapor phase growth accompanied by chemical reaction).
A cured film (Sio2) (61) is formed for up to about 00 people.
この酸化膜（６）上にフォトレジストを塗布しく図示略
）電極を設ける部分を開設する。この後フォトレジスト
は除去しておく。開設した部分下にある酸化ｙ （ｂ＋
をバッファフッ酸（ＢＨＦ）によりエツチングしｇ＜４
）を開ける。この窓（３）はナイトライド膜（２）に電
極用窓（３）を開けるためのエツチング用マスクとして
使用する。A photoresist is coated on this oxide film (6) to provide a portion where an electrode (not shown) will be provided. After this, the photoresist is removed. Oxidation y (b+
was etched with buffered hydrofluoric acid (BHF) and g<4
) open. This window (3) is used as an etching mask for opening an electrode window (3) in the nitride film (2).
バッファフッ酸はフッ化水１（ＨＦ）とフッ化アンモン
（ＮＨ４Ｆ）を１：５の割合でまぜたものである。Buffered hydrofluoric acid is a mixture of fluorinated water (HF) and ammonium fluoride (NH4F) at a ratio of 1:5.
ここにバッファフッ酸（ＢＨＦ）のナイトライド（Ｓｉ
３Ｎ４）に対するエツチングレートは２４λ／ｍ ｉ
ｎ に対して、酸化膜（Ｓｉ０２）に対しては６５０
ＱＪ、／ｍｉｎテアル。Here, buffered hydrofluoric acid (BHF) nitride (Si
The etching rate for 3N4) is 24λ/m i
n, 650 for the oxide film (Si02)
QJ, /minteal.
従ってバッファフッ酸のナイトライド膜（２）と酸化膜
（６）に対するエツチングレートの大きな差を利用して
電極用の窓（３）を設けるためのマスクとなる酸化膜（
６）に窓（イ）を容易に開けることができるのである。Therefore, by utilizing the large difference in the etching rate of buffered hydrofluoric acid between the nitride film (2) and the oxide film (6), the oxide film (2) serves as a mask for forming the electrode window (3).
6) The window (a) can be opened easily.
次に窓（舌）を利用して、即ち酸化膜（６）をマスクと
１７で熱リン酸にっけてナイトライド膜（２）に電極用
の窓（３）を開設する。ここに熱リン酸のナイトライド
膜に対するエツチングレートは１２０ Ｘ、／ｍｉ ｎ
であり、酸化膜（６）Ｉこ対するエツチングレートは８
λ、、／ｆ１１ｉ ｎであるので、酸化膜（６）を残し
て窓（５）は容易に開けることができるのである。Next, using the window (tongue), that is, the oxide film (6) is soaked in hot phosphoric acid with a mask 17 to open a window (3) for the electrode in the nitride film (2). Here, the etching rate of hot phosphoric acid for the nitride film is 120×/min.
The etching rate for the oxide film (6) I is 8.
Since λ, , /f11i n, the window (5) can be easily opened leaving the oxide film (6).
このようにして窓（ろ）が開けられるとこの窓（ろ）。When the window (ro) is opened in this way, it becomes this window (ro).
（４）を利用してＰ基板（１）上にアルミニウムの電極
（４）を形成する。第１０図はこの状態を示す。(4) to form an aluminum electrode (4) on the P substrate (1). FIG. 10 shows this state.
この電極（４）の上に半田（５）を伺ける。従って半田
イ」けの際に生ずるフラックスの炭化物は酸化膜（２）
上に残る。第１１図はこの状態を示す。Solder (5) can be applied on top of this electrode (4). Therefore, the carbide of the flux generated during soldering is an oxide film (2).
remain on top. FIG. 11 shows this state.
最後ニ？化Ｊ［６）をバッファフッ酸のエツチングによ
り除去する。従ってフラックスの炭化物は酸化膜（６）
と共（こ除去される。Last one? Chemical J[6] is removed by etching with buffered hydrofluoric acid. Therefore, the carbide of the flux is an oxide film (6)
With (this is removed.
上述の如（バッファフッ酸はナイトライド膜（２）に対
するエッチレイトが酸化膜に対するそれより非常に小さ
いのでナイトライド膜（２）を腐蝕するおそれはない。As mentioned above, the etch rate of buffered hydrofluoric acid for the nitride film (2) is much smaller than that for the oxide film, so there is no risk of corroding the nitride film (2).
第１２図はこの状態を示す。FIG. 12 shows this state.
以−Ｌのようにこの発明にあっては、ナイトライド膜よ
り剥離しやすいフオトレジスを使わす１こ空前外のよい
酸化膜を電極用の窓を開けるためのマスクとして使用し
ているので窓を開けるためθ）エツチングが容易であり
、しかもこの酸化膜（ま州′極形成後除去するので、電
極上に半田付けするため飛散したフラックスの炭化物も
同時番こ除去でき反射防止膜たるナイトライド膜は良好
番こ形成されるのである。As shown in L below, this invention uses a photoresist, which is easier to peel off than a nitride film, and uses an oxide film of unprecedented quality as a mask for opening the window for the electrode. Since this oxide film (θ) is easily etched, and since it is removed after the electrode is formed, the carbide of the flux that is scattered during soldering on the electrode can also be removed at the same time. This results in good grain formation.
第１図１乃至第５図に示すのは従来例を示す断面図、第
６図乃至第１２図はこθ〕発明θ）一実施例を示す断面
図である。
特許出願人
松下電工株式会社
代理人弁理士 竹 元 敏 丸
（ほか２名）
第１［４第２図
第３図 第４図
第５図 第６図
第７図・ 第８図
第９図 第１０図
第１１図 第１２図1 to 5 are sectional views showing a conventional example, and FIGS. 6 to 12 are sectional views showing an embodiment of the present invention θ). Patent applicant Matsushita Electric Works Co., Ltd. Patent attorney Toshimaru Takemoto (and 2 others) Figure 10 Figure 11 Figure 12
Claims (1)
）を形球し、該ナイトライド膜（２）上に酸化膜（６）
を形成し、該酸化膜（６）にバッファフッ酸を使用する
エツチングにより窓（５１を開口し、該窓（イ１を介し
て熱リン酸を使用するエツチングによりナイトライド膜
（２）に窓（５）を開設し、これらの窓（ろ１．（ろ１
を介してウェハ（１）上に電極（４）を形成し、該電極
ｉ４＋に半田（５１を付け、しかる後にバッファフッ酸
により酸化膜（６）を除去することを特徴とする太陽電
池の製造方法。(11 On the wafer (substrate) (1), the nitride film (2
) into a sphere, and an oxide film (6) is formed on the nitride film (2).
A window (51) is opened in the oxide film (6) by etching using buffered hydrofluoric acid, and a window (51) is opened in the nitride film (2) by etching using hot phosphoric acid through the window (A1). (5) and open these windows (Ro1.
Production of a solar cell characterized by forming an electrode (4) on a wafer (1) via a wafer (1), attaching a solder (51) to the electrode i4+, and then removing an oxide film (6) with buffered hydrofluoric acid. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58032374A JPS59158572A (en) | 1983-02-28 | 1983-02-28 | Manufacture of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58032374A JPS59158572A (en) | 1983-02-28 | 1983-02-28 | Manufacture of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59158572A true JPS59158572A (en) | 1984-09-08 |
Family
ID=12357165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58032374A Pending JPS59158572A (en) | 1983-02-28 | 1983-02-28 | Manufacture of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59158572A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014029836A3 (en) * | 2012-08-23 | 2014-04-17 | Commissariat à l'énergie atomique et aux énergies alternatives | Method for producing the electrical contacts of a semiconductor device, such as a photovoltaic cell, comprising steps involving the laser etching and wet etching of dielectric layers |
-
1983
- 1983-02-28 JP JP58032374A patent/JPS59158572A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014029836A3 (en) * | 2012-08-23 | 2014-04-17 | Commissariat à l'énergie atomique et aux énergies alternatives | Method for producing the electrical contacts of a semiconductor device, such as a photovoltaic cell, comprising steps involving the laser etching and wet etching of dielectric layers |
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