JPS59132147A - Airtight sealing method for semiconductor device - Google Patents
Airtight sealing method for semiconductor deviceInfo
- Publication number
- JPS59132147A JPS59132147A JP58006852A JP685283A JPS59132147A JP S59132147 A JPS59132147 A JP S59132147A JP 58006852 A JP58006852 A JP 58006852A JP 685283 A JP685283 A JP 685283A JP S59132147 A JPS59132147 A JP S59132147A
- Authority
- JP
- Japan
- Prior art keywords
- sealing
- container
- semiconductor device
- opening
- transmitting body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000007789 sealing Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 14
- 239000003566 sealing material Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 abstract description 10
- 230000008018 melting Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、固体撮像装置等の半導体装置の気密封正方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for hermetically sealing a semiconductor device such as a solid-state imaging device.
一般に、Ｃ０Ｄ（電荷結合装置）等の固体撮像装置は第
１図および第２図に示すような構成をとる。第１図は、
固体撮像装置の外観斜視図であシ、第２図は、第１図の
Ａ−Ａ線に溜った断面図である。これら図面に示すよう
に、上方に光を入射するための開口部を設けた直方体状
のセラミック容器ｌには複数のリードλが設けられてお
り、このセラミック容器ｌの内部には半導体素子３が搭
載され、半導体素子３はボンディングワイヤｌによって
リードλに電気的に接続されている。そして、半導体素
子を収納するセラミック容器／の開口部には、該開口部
と同形のガラスプレー）ｊが・封着剤としての低融点ガ
ラス層ｔを介して固着され、これにより半導体装置の気
苦封止が達成されている。Generally, a solid-state imaging device such as a C0D (charge-coupled device) has a configuration as shown in FIGS. 1 and 2. Figure 1 shows
2 is a perspective view of the appearance of the solid-state imaging device, and FIG. 2 is a sectional view taken along line A-A in FIG. 1. As shown in these drawings, a rectangular parallelepiped ceramic container l provided with an opening for incident light upward is provided with a plurality of leads λ, and a semiconductor element 3 is installed inside this ceramic container l. The semiconductor element 3 is mounted and electrically connected to the lead λ by a bonding wire l. A glass plate (j) having the same shape as the opening is fixed to the opening of the ceramic container// that houses the semiconductor element through a low-melting glass layer (t) serving as a sealant, thereby sealing the semiconductor device. A tight seal has been achieved.
従来、この気密封止は、次のような方法で行われていた
。すなわち、半導体素子の設置、配線等が終了した後に
、セラミック容器の開口部の板受用の凹部に低融点ガラ
ス層ｔを形成し、さらにこの上にガラスプレートｊを開
口部全面を覆うように載置する。次いで、たとえばｔｉ
ｓｏ℃の窒素雰囲気中で１〜７０分間、／、０−２．０
Ｋ９７の２の圧力を゛加えることにより低融点ガラス層
ｔを溶融し、これによシガラスプレートをセラミック容
器に固着し、装置の気密封止が行われていた。Conventionally, this hermetic sealing was performed by the following method. That is, after the installation of semiconductor elements, wiring, etc. are completed, a low melting point glass layer t is formed in the recess for the plate in the opening of the ceramic container, and a glass plate j is placed on top of this to cover the entire surface of the opening. place Then, for example, ti
1 to 70 minutes in a nitrogen atmosphere at so℃ /, 0 to 2.0
By applying a pressure of 2 K97, the low melting point glass layer t was melted, thereby fixing the glass plate to the ceramic container and hermetically sealing the device.
上記従来の気密封止方法は、簡易かつ迅速に半導体装置
の気密封止を達成する方法としてすぐれているが、次の
ような欠点を有する。Although the conventional hermetic sealing method described above is excellent as a method for easily and quickly achieving hermetic sealing of a semiconductor device, it has the following drawbacks.
すなわち、上記従来法においては、低融点ガラス層ｚを
介してガラスプレー）ｊを熱圧着する際に、該低融点ガ
ラスの一部が飛散あるいは溶出し、これが半導体素子の
受光面を覆う等の致命的又′陥を生ぜしめ、製品の歩Ｑ
、Ｄの低下をもたらすという問題があった。That is, in the above-mentioned conventional method, when the glass plate (j) is thermocompression bonded through the low-melting point glass layer z, a part of the low-melting point glass is scattered or eluted, causing problems such as covering the light-receiving surface of the semiconductor element. This can cause fatal defects and damage the quality of the product.
, D is lowered.
本発明は、上述の点に鑑みてなされたものであシ、半導
体装置を封止する際に生ずる半導体装置に及ばず悪影響
を解消し、装置の製造歩留りの向上が図られた半導体装
置の気密封止方法を提供する−ことを目的とする。The present invention has been made in view of the above-mentioned points, and is intended to improve the manufacturing yield of semiconductor devices by eliminating the adverse effects that occur when encapsulating the semiconductor devices without affecting the semiconductor devices. The purpose is to provide a hermetic sealing method.
本発明の半導体装置の気密封止方法は、リード部および
開口部を有する容器の内部に半導体素子を搭載し該開口
部を封止するに際し、１ず前記開口部をυうようにして
光透過性体を載置し、次いで封着材を介して前記光透過
性体の周縁部に封止体を固着することによシ前記容器の
開口部を封止することを特徴とするものである。In the hermetic sealing method for a semiconductor device of the present invention, when a semiconductor element is mounted inside a container having a lead portion and an opening and the opening is sealed, first, the opening is made to pass through the opening. The container is characterized in that the opening of the container is sealed by placing a transparent body thereon and then fixing a sealing body to the peripheral edge of the light-transmitting body via a sealing material. .
以下、図面を参照して本発明の実施例について説明する
。Embodiments of the present invention will be described below with reference to the drawings.
第３図に示すように、まずセラミック容器ｌの内部に半
導体素子３を搭載しボンデイングワイヤグ等によシ必要
な配線を行った後に、容器開口部端縁に設けた仮受用四
部にはめ込むようにして光透過性体、ｔａを密着載置す
る。光透過性体としては、ガラス板が好ましく用いられ
る。As shown in Fig. 3, first the semiconductor element 3 is mounted inside the ceramic container l, and after the necessary wiring is done using bonding wires etc., it is inserted into the four temporary receiving parts provided at the edge of the opening of the container. Then, place the light-transmitting body and ta in close contact with each other. A glass plate is preferably used as the light-transmitting body.
次いで、セラミック容器／と光透過性体の周縁との境界
部を薇うようにして封着材層Ｊａを形成する。側着材と
しては、リン酸塩系、鉛系ガラス等の低融点ガラスが好
ましく用いられる。Next, a sealing material layer Ja is formed so as to cover the boundary between the ceramic container and the periphery of the light-transmitting body. As the side adhesive material, low melting point glass such as phosphate glass or lead glass is preferably used.
次いで、上記封着材層６ａの上に封止体７を載置する（
第ｚ図）。この封止体はセラミックスからなることが
好葦しく、またその形状は′、第１図にその正面図を示
すように、セラミック容器開口部周Ｚ「６と光透過性体
！ａの端縁との境界部を被覆できるような形状で＊るこ
とか必要である。Next, the sealing body 7 is placed on the sealing material layer 6a (
Figure z). This sealing body is preferably made of ceramics, and its shape is as shown in the front view of FIG. It is necessary to have a shape that can cover the boundary between the two.
次いで、封着材層Ａａが溶融した状態で外圧を加えるこ
とによシ封着剤層乙ａを介して封止体７および光透過性
体ｔａを容器／に固治し半導体装置の気密封止工程が終
了する（第５図）。Next, by applying external pressure while the sealing material layer Aa is in a molten state, the sealing body 7 and the light-transmitting body ta are solidified into a container/through the sealing material layer Oa, and the semiconductor device is hermetically sealed. The process is completed (Figure 5).
上記気密封止工程において、封止体の圧着時の圧力によ
シ封石材が圧延され、該封着材が光透過性体の表面に飛
散する場合もあるが、容器内部に飛散し、半導体素子に
悪影響を及ぼすおそれはない。葦だ、光透過性体の表面
に飛散した封着材は容易に除去し得る。たとえば、清浄
な柔らかい布等でふき取ったシ、あるいはエツチング等
によシ化学的に除去することができる。本発明者の実験
によれは、光透過性体としてガラス板を用い、封着材と
して低融点ガラスを用いた場合において、ガラス板表表
面に飛散した低融点ガラスは、希硝酸（７０％）で処理
することによシはぼ完全に除去し得ることを確認した。In the above-mentioned hermetic sealing process, the sealing material is rolled by the pressure when the sealing body is crimped, and the sealing material may scatter on the surface of the light-transmitting body, but it may also scatter inside the container and cause the semiconductor There is no risk of adverse effects on the device. The sealing material scattered on the surface of the light-transmitting body can be easily removed. For example, it can be chemically removed by wiping with a clean soft cloth or by etching. According to the inventor's experiments, when a glass plate is used as a light-transmitting body and a low-melting point glass is used as a sealing material, the low-melting point glass scattered on the surface of the glass plate is exposed to dilute nitric acid (70%). It was confirmed that the stains could be completely removed by treatment.
第を図に、本発明の他の実施例を示す。Another embodiment of the present invention is shown in FIG.
本実施例においては、容器開口部の周縁の凹部に封着材
＆ａを介して封止体７および光透過性体ｊａが固着され
、半導体装置の気密封止が達成されている。In this embodiment, the sealing body 7 and the light-transmitting body ja are fixed to the recessed portion at the periphery of the container opening via the sealing material &a, thereby achieving airtight sealing of the semiconductor device.
本発明の半導体装置の気密封止方法は、半導体装置の開
口部に光透過性体を載置した後に封着材を介して封止体
および該光透過性体を固着することによシ開ロ部を封止
するようにしたので、封着材が半導体装置内部に飛散す
る等の欠点は解消され、半導体装置の製造歩留シの一層
の向上を図ることができる。The method for hermetically sealing a semiconductor device of the present invention includes placing a light-transmitting body in an opening of a semiconductor device and then fixing the sealing body and the light-transmitting body through a sealing material. Since the round part is sealed, defects such as the sealing material scattering inside the semiconductor device are eliminated, and the manufacturing yield of the semiconductor device can be further improved.
第７図は半導体装置の外観斜視図であシ、第２図は第１
図Ａ −Ａ 繍に沿う断面図であり、第３図は本発明の
気密封止工程を示す断面図であシ、゛葛グ図は封止体の
平面図であシ、第３図および第２図は、本発明の方法で
封止された半導体装置の断面図である。
／・・・セラミック容器、 ２・・・リード、 ３・・
・半導体素子、 グ・・・ボンティングワイヤ、 ！・
・・ガラス板、 ！ａ・・・光透過性体、 ｔ・・・低
融点ガラス層、 ＆ａ・・・封着材、 ７・・・封止体
。
出願人代理人 猪 股 清FIG. 7 is an external perspective view of the semiconductor device, and FIG.
Figure A-A is a cross-sectional view along the embroidery, Figure 3 is a cross-sectional view showing the hermetic sealing process of the present invention, and Figure 3 is a plan view of the sealed body. FIG. 2 is a cross-sectional view of a semiconductor device sealed by the method of the present invention. /...Ceramic container, 2...Reed, 3...
・Semiconductor elements, bonding wires, !・
...Glass plate! a...Light-transmitting body, t...Low melting point glass layer, &a...Sealing material, 7... Sealing body. Applicant's agent Kiyoshi Inomata
Claims (1)
体素子を搭載し該開口部を封止するに際し、まず前記開
口部を覆うようにして光透過性体を載置し、′次いで封
着材を介して前記光透過性体の周縁部に封止体を固着す
ることによシ前記容器の開口部を封止することを特徴と
する、半導体装置の気密封止方法。 コ、前記光透過性体がガラス板であり、前記ｉ層材が低
融点ガラスである、特許請求の範囲第１項に記載の方法
。[Claims] / When a semiconductor element is mounted inside a container having a lead portion and an opening and the opening is sealed, a light-transmitting material is first placed to cover the opening. the opening of the container is sealed by fixing a sealing body to the peripheral edge of the light-transmitting body through a sealing material. Sealing method. 7. The method according to claim 1, wherein the light-transmitting body is a glass plate, and the i-layer material is a low-melting glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006852A JPS59132147A (en) | 1983-01-19 | 1983-01-19 | Airtight sealing method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006852A JPS59132147A (en) | 1983-01-19 | 1983-01-19 | Airtight sealing method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59132147A true JPS59132147A (en) | 1984-07-30 |
Family
ID=11649759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58006852A Pending JPS59132147A (en) | 1983-01-19 | 1983-01-19 | Airtight sealing method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132147A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622251U (en) * | 1985-06-20 | 1987-01-08 | ||
| EP1624498A3 (en) * | 2004-08-03 | 2011-03-30 | Philips Lumileds Lighting Company LLC | Package for semiconductor light emitting device |
| US9054279B2 (en) | 2007-01-11 | 2015-06-09 | Osram Opto Semiconductors Gmbh | Optoelectronic component disposed in a recess of a housing and electrical componenet disposed in the housing |
-
1983
- 1983-01-19 JP JP58006852A patent/JPS59132147A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622251U (en) * | 1985-06-20 | 1987-01-08 | ||
| EP1624498A3 (en) * | 2004-08-03 | 2011-03-30 | Philips Lumileds Lighting Company LLC | Package for semiconductor light emitting device |
| US9054279B2 (en) | 2007-01-11 | 2015-06-09 | Osram Opto Semiconductors Gmbh | Optoelectronic component disposed in a recess of a housing and electrical componenet disposed in the housing |
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