JPS59134821A - Method and device for manufacturing thin film - Google Patents

Abstract

PURPOSE:To reduce the inner stress of a thin film as desired and then easily obtain a thin film containing a high melting point substance according to necessity by using a vapor deposition method and a sputtering method at the same time. CONSTITUTION:The inside of a chamber 1 is set at a pressure of 10<-4> Torr or less, and a vapor depositing device 2 and a sputtering device are operated. Since the titled device has a structure of producing ions accelerated in an ion beam sputtering part 8, the vacuum degree can be decreased to approx. 10<-4> Torr, thus enabling the operation in the same chamber as the vapor deposition device 2. The formed thin film 7 is deposit by evaporation and sputtering, and has different deposition density, therefore the change of the ratio of deposition enables to obtain a desired average density and to control the inner stress arbitrarily. Further, the arbitrary amount of the high melting point substance can be contained in the thin film by setting up the high melting point substance 9 in a sputtering source 9, performing sputtering and vapor deposition at the same time, and thus varying the amount of sputtering gas flow and the acceleration voltage for the gas ion.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for manufacturing a thin film, and more particularly to a method and apparatus for manufacturing a thin film with controlled internal stress and a thin film that can contain a required amount of a high melting point substance.

Generally, when forming a thin film on a substrate in the manufacture of semiconductor devices, etc., CVD, vapor deposition, or sputtering methods have traditionally been used, and the most suitable method is selected from each of these methods to form a thin film. are doing. By the way, it has been revealed that internal stress exists in the thin film formed in this manner. This internal stress depends on the thin film formation method and formation conditions.

It is generally said that thin films formed by vapor deposition have tensile stress and those formed by sputtering have compressive stress, depending on the material.

Therefore, it cannot be denied that internal stress exists in the thin film forming the semiconductor device, and this internal stress may also have an adverse effect on device characteristics or may cause peeling. Particularly in recent years, the film thickness of semiconductor devices tends to become thinner and thinner as they become more highly integrated and operate at higher speeds, and the above-mentioned problems become more pronounced, making it even more important to reduce internal stress. However, the reality is that the above-mentioned film forming methods cannot solve the problem of internal stress, and this is the way forward.

(An object of the present invention is to provide a thin film manufacturing method and manufacturing apparatus that can control the internal stress of a thin film such as reducing it as desired, and can also contain a low melting point substance as necessary. It's about doing.

In order to achieve this object, the method of the present invention uses both vapor deposition and sputtering methods simultaneously to form a thin film.

Furthermore, the apparatus of the present invention incorporates a vapor deposition apparatus and a sputtering apparatus into one chamber so that they can be operated simultaneously.

Hereinafter, the present invention will be explained based on the drawings.

According to the inventor's study, 1. There are various possible reasons why a thin film has internal stress, one of which is related to the density of the thin film. For example, internal stress increases when a deposited Ni film is annealed at several hundred degrees. This is because heat annealing eliminates lattice defects and reduces the volume. Therefore, it is possible to change the internal stress by changing the density of the thin film.For example, if the density of the film is increased during film formation, the compressive stress will be increased, and if the density is decreased, the tensile stress will be increased. It will be done. The present invention focuses on this point and changes the density of the thin film during film formation. Specifically, the vapor deposition method and the sputtering method are operated simultaneously.

Hereinafter, one embodiment of the present invention will be described based on the drawings.

The figure shows an embodiment of a thin film manufacturing apparatus, in which a vapor deposition apparatus 2 and a sputtering apparatus 3 are installed in a film forming tank 1 configured as one chamber. The evaporation apparatus 2 includes an electron gun 4 for performing electron beam evaporation and a evaporation source 5, and uses electrons emitted from the electron gun 4 to deposit material from the evaporation source 5 onto a substrate 7 placed on a substrate support 6. to form a film. Sputtering device 3
has an ion beam sputtering section 8 and a sputtering source 9, and causes ions accelerated and emitted from the ion beam sputtering section 8 to collide with the sputtering source 9, and the soot produced at that time,
7 particles are deposited on the substrate 7. The ion beam sputtering section 8 includes an ion source 1 having a gas inlet 10.
1 and an accelerating section 12 connected to the ion source 11.
The ions can be ionized in the acceleration section 12 and then accelerated and released. The interior of the film forming tank 1 is exhausted through an exhaust port 13, for example, by a diffusion pump.

Discharge using a rotary pump, etc.

Therefore, according to the above configuration, film formation can be performed by setting the degree of vacuum in the film forming tank 1 to 10' Torr or less and then operating the vapor deposition device 2 and the sputtering device 3. In this case, the vapor deposition device 2 satisfies the vacuum condition, but the sputtering device 3 usually requires a vacuum degree of 10-1 to 10 Torr, so problems may occur if both devices are operated at the same time. Seem. However, since the sputtering apparatus 3 of this example is configured to generate accelerated ions within the ion beam sputtering section 8, the degree of vacuum condition is set to 1.
It becomes possible to lower the pressure to 0-' Torr, and it can be operated in the same tank as the vapor deposition apparatus 2.

By forming a film on the substrate 7 by operating the evaporation device 2 and the sputtering device 3 simultaneously in this way, the formed thin film is composed of deposition by evaporation and deposition by sputtering. Since the density due to each deposition is different, a desired density (average density) can be obtained by changing the deposition ratio, and therefore the internal stress of the thin film can be arbitrarily controlled.

In addition, in the sputtering apparatus 3 having the above configuration, plasma peculiar to sputtering is not generated in the film forming bath 1, so that the influence of the plasma on the film can also be prevented.

Here, the vapor deposition source 5 and the sputtering source 9 may be configured as the same target. On the other hand, a plurality of vapor deposition devices 2 and a plurality of sputtering devices 3 may be provided.

Furthermore, since the sputtering method can form a thin film of high melting point substances and their compounds more easily than vapor deposition methods etc., by placing the high melting point substance in the sputtering source 9 and performing sputtering and vapor deposition simultaneously, A thin film containing a high melting point substance can be formed. Inclusion of a high melting point substance can be easily achieved by changing the sputtering ratio by changing the flow rate of the sputtering gas or the accelerating voltage of gas ions.

As described above, according to the thin film manufacturing method of the present invention, since the thin film is formed using both the vapor deposition method and the sputtering method at the same time, the internal stress of the thin film can be adjusted to a desired value by adjusting the density of the thin film to a desired value. This can be controlled and, if necessary, a thin film containing a high melting point substance can be formed.

Furthermore, since the thin film manufacturing apparatus of the present invention integrates a vapor deposition apparatus and a sputtering apparatus in one tank so that they can be operated simultaneously, the thin film manufacturing apparatus of the present invention can contain a thin film of the desired density and a high melting point substance. Therefore, it is possible to form a thin film extremely easily.

[Brief explanation of the drawing]

The figure is an overall configuration diagram of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Film formation tank, 2... Evaporation device, 3... Snow vine device, 4... Electron gun, 5... Vapor deposition source, 7... Substrate, 8... Ion beam snow (Ivy part, 9...Snow ivy source, 11...Ion source, 12...Acceleration part.

Claims (1)

[Claims] 1. A method for manufacturing a thin film, characterized in that the thin film is formed by simultaneously using two methods: vapor deposition and sputtering. 2. The thin film manufacturing method according to claim 1, wherein the film density is controlled by changing the film deposition ratio of the vapor deposition method and the sputtering method. 3. A method for producing a thin film according to claim 2, which is formed by sputtering using a high melting point substance. 4. A film manufacturing apparatus for forming a thin film, characterized in that a vapor deposition device and a sputtering device are integrated in one film forming tank, and are configured to operate simultaneously. Device. 5. The sputtering device includes an ion source that ionizes the rare gas,
5. The thin film manufacturing apparatus according to claim 4, comprising an ion beam sputtering section having an acceleration section that accelerates and releases the ions. 6. The thin film manufacturing apparatus according to claim 5, wherein the degree of vacuum in the tank is set to 10-' Torr or less.