JPS5878424A - Mother boat for semiconductor diffusion furnace - Google Patents
Mother boat for semiconductor diffusion furnaceInfo
- Publication number
- JPS5878424A JPS5878424A JP17637381A JP17637381A JPS5878424A JP S5878424 A JPS5878424 A JP S5878424A JP 17637381 A JP17637381 A JP 17637381A JP 17637381 A JP17637381 A JP 17637381A JP S5878424 A JPS5878424 A JP S5878424A
- Authority
- JP
- Japan
- Prior art keywords
- temperature measuring
- measuring pipe
- temperature
- mother boat
- motherboard
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、測温管を設置することができる半導体拡散炉
用マザーボートに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a motherboard for a semiconductor diffusion furnace in which a temperature measuring tube can be installed.
従来から使用されている半導体拡散炉は、プロセスチュ
ーブを挿入するライナーチューブの外側に断熱材を設け
た二重構造になっている。そして、プロセスチューブの
中にマザーボートを挿入する。マザーボート1は被処理
物(ウェハー)をのせたウェハーボートが積載されてい
る。Conventionally used semiconductor diffusion furnaces have a double structure in which a heat insulating material is provided on the outside of a liner tube into which a process tube is inserted. Then insert the motherboard into the process tube. The mother boat 1 is loaded with wafer boats carrying objects to be processed (wafers).
半導体の拡散工程では、拡散処l1lIi度が最も重要
な条件の1つである。この拡散時の温度制御を従来の拡
散炉では次のように行なっていた。In a semiconductor diffusion process, one of the most important conditions is the degree of diffusion treatment. Temperature control during this diffusion was performed in the conventional diffusion furnace as follows.
(1)プロセスチューブの外側から温度測定を行なう。(1) Measure the temperature from the outside of the process tube.
あるいは
(2)拡散処理前にプロセスチューブ内の温度を数箇所
測定し、プロセスチューブ内の温度条件を一定に保ちな
がら、プロセスチューブ内に被処理物を積載したマザー
ボートを挿入する。Alternatively, (2) the temperature inside the process tube is measured at several points before the diffusion treatment, and the mother boat loaded with the object to be processed is inserted into the process tube while keeping the temperature condition inside the process tube constant.
しかし、(1)のI!度制御では被処理物、ウェハーボ
ート及びマザーボートが熱容量を有するため、プロセス
チューブ内に挿入した被処理物の実際の温度を測定する
ことができなかった。また、(2)は拡散処理前だけ濃
度測定を行ない、その後はI1度条件を一定にするだけ
で温度測定を行なわないため、拡散処理中の正確な温度
測定が国難であった。However, (1) I! In temperature control, the actual temperature of the workpiece inserted into the process tube cannot be measured because the workpiece, wafer boat, and mother boat each have a heat capacity. In addition, in (2), the concentration is measured only before the diffusion treatment, and after that, the temperature is not measured only by keeping the I1 degree condition constant, so accurate temperature measurement during the diffusion treatment is a national problem.
本発明の目的は上記の従来技術の欠点を解消して、拡散
処理中も被処理物の実際のI!痕を測定することができ
る半導体拡散炉用マザーボートを提供することにある。An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art, and to maintain the actual I/O of the treated object even during the diffusion process. An object of the present invention is to provide a motherboard for a semiconductor diffusion furnace that can measure marks.
本発明による半導体拡散炉用マザーボートは、マザーボ
ート本体の所定の場所に1または2個以上の測温管支持
部材を設け、この測温管支持部材に測温管を設置する構
成にしたものである。The motherboard for a semiconductor diffusion furnace according to the present invention has a structure in which one or more temperature measuring tube support members are provided at predetermined locations on the motherboard body, and the temperature measuring tubes are installed on the temperature measuring tube support members. It is.
以下、図面を参照して本発明の好適な実施例を説明する
。Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
第1図は、本発明による半導体拡散炉用マザーボートの
一例を示す側面図で、ウェハーボートがのっている。FIG. 1 is a side view showing an example of a mother boat for a semiconductor diffusion furnace according to the present invention, on which a wafer boat is mounted.
マザーボート本体1の上には、ウェハー5を並べたウェ
ハーボート4が積載されている。A wafer boat 4 in which wafers 5 are lined up is loaded on top of the mother boat body 1.
マザーボート本体1の前後には車輪6が取付けられてい
て、マザーボート本体1の出し入れが容易にできるよう
になっている。Wheels 6 are attached to the front and rear of the motherboard body 1, so that the motherboard body 1 can be easily taken in and out.
さて、マザーボート本体1には1または2個以上の測温
管支持部材2が設けられている。Now, the motherboard main body 1 is provided with one or more temperature measuring tube support members 2.
測温管支持部材2はマザーボート本体1と別物でもよい
し、マザーボート本体1と一体成形で設けてもかまわな
い。また、測温管支持部材2の材質はマザーボート1と
同質のものが好ましいが、これに限定されない。従来か
ら使用されているマザーボート本体1は炭化珪素質のも
のである。炭化珪素質とは、炭化珪素を主体とするもの
という意味であり、炭化珪素だけからなるもの、あるい
は金属珪素を含むものをいう。The temperature measuring tube support member 2 may be separate from the motherboard main body 1, or may be provided integrally with the motherboard main body 1. Moreover, the material of the temperature measuring tube support member 2 is preferably the same as that of the motherboard 1, but is not limited thereto. A conventional motherboard body 1 is made of silicon carbide. The term "silicon carbide material" means a material mainly composed of silicon carbide, and refers to a material consisting only of silicon carbide or a material containing metallic silicon.
測温管支持部材2には貫通孔が設けてあり、この貫通孔
に測温管3を挿入して設置する。The temperature measuring tube support member 2 is provided with a through hole, and the temperature measuring tube 3 is inserted and installed into this through hole.
測1!!!3は必要に応じて測温管支持部材2から抜く
ことも可能である。測温113は石英製あるいは炭化珪
素質のものが好ましい。そして、測1113の中に熱電
対を挿入する。Measurement 1! ! ! 3 can be removed from the temperature measuring tube support member 2 if necessary. The temperature measurement 113 is preferably made of quartz or silicon carbide. Then, insert a thermocouple into the probe 1113.
測温管支持部材2の設置場所はどこでもよいが、測温管
3の先端3aが拡散炉の中間部に位置するよう設置する
のが好ましい。また、マザーボート本体1の下部に設置
するのが好ましい。The temperature measuring tube support member 2 may be installed anywhere, but it is preferably installed so that the tip 3a of the temperature measuring tube 3 is located in the middle of the diffusion furnace. Moreover, it is preferable to install it at the lower part of the motherboard main body 1.
以上のように構成されたマザーボート本体1をプロセス
チューブ(図示せず)に入れて、ウェハー5の拡散処理
をする。測温管3はマザーボート本体1に設置されてい
るから、マザーボート本体1の出し入れの際には測温管
3も一緒に移動する。The motherboard main body 1 configured as described above is placed in a process tube (not shown), and the wafer 5 is subjected to a diffusion process. Since the temperature measuring tube 3 is installed in the motherboard main body 1, when the motherboard main body 1 is inserted or removed, the temperature measuring tube 3 also moves together.
本発明の半導体拡散炉用マザーボートによれば、被処理
物をのせるマザーボート本体1に測温管3が取付けであ
るので、被処理物の実際の温度を炉に入れた時から拡散
処理中まで正確に測定することができ、拡散処理中の被
処理物の温度制御を正確にすることができる。According to the motherboard for a semiconductor diffusion furnace of the present invention, since the temperature measuring tube 3 is attached to the motherboard main body 1 on which the object to be processed is placed, the actual temperature of the object to be processed can be measured from the time it is placed in the furnace during the diffusion process. It is possible to accurately measure the temperature of the object to be processed during the diffusion process.
第1図は本発明による半導体拡散炉用マザーボートの一
例を示す側面図である。
1・・・・・マザーボート本体
2・・・・・測温管支持部材
3・・・・・測Ii管
4・・・・・ウェハーボート
5ΦΦ・・・ウェハー
6・・・・・車輪FIG. 1 is a side view showing an example of a motherboard for a semiconductor diffusion furnace according to the present invention. 1...Mother boat body 2...Temperature tube support member 3...Ii tube 4...Wafer boat 5ΦΦ...Wafer 6...Wheel
Claims (1)
ボートにおいて、マザーボート本体の所定の場所に1ま
たは2個以上の測温管支持部材を設け、前記測温管支持
部材に測温管を設置する構成にしたことを特徴とする半
導体拡散炉用マザーボート。In a mother boat used for placing objects to be processed in a semiconductor diffusion furnace, one or more temperature measuring tube support members are provided at predetermined locations on the mother boat body, and the temperature measuring tubes are attached to the temperature measuring tube support members. A motherboard for a semiconductor diffusion furnace, characterized in that the motherboard is configured to install a.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17637381A JPS5878424A (en) | 1981-11-05 | 1981-11-05 | Mother boat for semiconductor diffusion furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17637381A JPS5878424A (en) | 1981-11-05 | 1981-11-05 | Mother boat for semiconductor diffusion furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5878424A true JPS5878424A (en) | 1983-05-12 |
Family
ID=16012487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17637381A Pending JPS5878424A (en) | 1981-11-05 | 1981-11-05 | Mother boat for semiconductor diffusion furnace |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5878424A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63121431U (en) * | 1987-01-30 | 1988-08-05 | ||
EP0645072A1 (en) * | 1992-06-15 | 1995-03-29 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
-
1981
- 1981-11-05 JP JP17637381A patent/JPS5878424A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63121431U (en) * | 1987-01-30 | 1988-08-05 | ||
EP0645072A1 (en) * | 1992-06-15 | 1995-03-29 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
EP0645072A4 (en) * | 1992-06-15 | 1997-12-10 | Thermtec Inc | High performance horizontal diffusion furnace system. |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0902464A3 (en) | Semiconductor wafer temperature measurement and control thereof using gas temperature measurement | |
EP0390672B1 (en) | Method for heat process of silicon | |
JPS5878424A (en) | Mother boat for semiconductor diffusion furnace | |
JPH03145121A (en) | Temperature controller for heat treatment of semiconductor | |
JPS6047981B2 (en) | Jig for detecting internal temperature of horizontal heat treatment furnace | |
JPS6132510A (en) | Temperature controlling mechanism for substrate | |
JPS5932907Y2 (en) | temperature measuring device | |
US4256052A (en) | Temperature gradient means in reactor tube of vapor deposition apparatus | |
JPH06196427A (en) | Boat for heat treatment of wafer | |
JPS57190318A (en) | Electron beam exposure device | |
JPS5488068A (en) | Determination method of production condition for semiconductor device | |
JPH05180579A (en) | Measuring method for temperature of rear surface of slab in heating furnace | |
SU880633A1 (en) | Method of machining non-rigid parts | |
JPH03225819A (en) | Temperature measurement at the time of taking profile data of substrate heat treat furnace and substrate boat used therefor | |
JPS6479093A (en) | Pulling up device for single crystal rod | |
JPS5249089A (en) | Apparatus for testing reduction of iron ores or the like | |
JPS54136174A (en) | Automatic semiconductor thermal processor | |
JPS58180021A (en) | Heat treatment device for semiconductor substrate | |
JPS5478969A (en) | Tool for semiconductor wafer thermal treatment | |
JPS586136A (en) | Heat treatment method for semiconductor wafer | |
JPS605218B2 (en) | Heat balance jig | |
JPS58294Y2 (en) | semiconductor diffusion furnace | |
JPS622763Y2 (en) | ||
JPH0722430A (en) | Diffusion furnace for manufacturing semiconductor | |
JPH0555155A (en) | Semiconductor thermal treatment apparatus |