JPS5868944A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5868944A JPS5868944A JP56167219A JP16721981A JPS5868944A JP S5868944 A JPS5868944 A JP S5868944A JP 56167219 A JP56167219 A JP 56167219A JP 16721981 A JP16721981 A JP 16721981A JP S5868944 A JPS5868944 A JP S5868944A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- tab
- solder
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
本発明は金、銀材料の省略化、低コスト化を図りかつ信
頼性の高い半導体装置に関するものである。
頼性の高い半導体装置に関するものである。
従来、半導体ペレットをリードフレームにペレット付f
fする場合、リードフレームの半導体ペレット付は部及
びインナーリード部に金めつきを施こしておき、べGン
トのシリコンとり゛−ドフレームの金、とを加熱(約4
00C)してスクラブすることによ゛り金−シリコン共
晶構造を作り、ペレ・ツト付けする方法を用い、ペルレ
ット付は後ペレットの電極部とインナーリード部を金線
によって接続する方式が一般的である。
fする場合、リードフレームの半導体ペレット付は部及
びインナーリード部に金めつきを施こしておき、べGン
トのシリコンとり゛−ドフレームの金、とを加熱(約4
00C)してスクラブすることによ゛り金−シリコン共
晶構造を作り、ペレ・ツト付けする方法を用い、ペルレ
ット付は後ペレットの電極部とインナーリード部を金線
によって接続する方式が一般的である。
ところが、このような構造では、ペレットと金めっき層
との間に形成される共晶合金が、両者間での面圧の不均
一等が原因となって、ペレット全面に均一に形成されな
いと、所謂部れの悪い箇所が生じ、その境界部に応力集
中が生じてペレットクラックが起こり昌くなり、信頼性
の低いものにな〜てしまう。また、前述の構造では高価
な金属である金をペレット付は及びワイヤボンディング
部やワイヤに多量に用いているためコスト高になってい
る。
との間に形成される共晶合金が、両者間での面圧の不均
一等が原因となって、ペレット全面に均一に形成されな
いと、所謂部れの悪い箇所が生じ、その境界部に応力集
中が生じてペレットクラックが起こり昌くなり、信頼性
の低いものにな〜てしまう。また、前述の構造では高価
な金属である金をペレット付は及びワイヤボンディング
部やワイヤに多量に用いているためコスト高になってい
る。
したがって、本発明の目的は、信頼性が高く、しかも低
コストの半導体装置を提供することにある。
°゛このような目的を達
成するために本発明による半導体装置は、リードフレー
ムのベレット付1部及びインナーリード部にAJをめっ
きあるいは蒸着によりもうけたものと、ペレット裏面に
同じようにA!なめっきあるいは蒸着によりもうけたも
のを、A4が良く濡れるはんだで溶着しかつペレットの
電極部とインナーリード部をA!ワイヤで接続してなる
構造を特徴とするものである。
コストの半導体装置を提供することにある。
°゛このような目的を達
成するために本発明による半導体装置は、リードフレー
ムのベレット付1部及びインナーリード部にAJをめっ
きあるいは蒸着によりもうけたものと、ペレット裏面に
同じようにA!なめっきあるいは蒸着によりもうけたも
のを、A4が良く濡れるはんだで溶着しかつペレットの
電極部とインナーリード部をA!ワイヤで接続してなる
構造を特徴とするものである。
以下本発明の実施例を図面に基づいて説明する。
第1図は本発明の半導体装置の縦断面図であり、銅系、
鉄系金属の板材を所定のパターンに打抜き成形成いはエ
ツチングして形成したリードフレーム1は牛導体ペレッ
ト5をボンディングするタブ2及びインナーリード3に
A1をめっきあるいは蒸着で形成しており、さらにアウ
ターリード4からなっている。そして前記タブ2には、
シリコンからなる牛導体ベレット5の裏面にA1層8を
めっき又は蒸着でもうけたものをAJに対して濡れの良
いはんだ7により加熱溶融して溶着し、かつペレット5
とインナーリード3上にもうけたAノ層6間をA!ワイ
ヤ9にて接続している。更に、これ等ペレット5やイン
ナーリード3はレジン10にて封止され、レジンモール
ド製パッケージが完成されている。
鉄系金属の板材を所定のパターンに打抜き成形成いはエ
ツチングして形成したリードフレーム1は牛導体ペレッ
ト5をボンディングするタブ2及びインナーリード3に
A1をめっきあるいは蒸着で形成しており、さらにアウ
ターリード4からなっている。そして前記タブ2には、
シリコンからなる牛導体ベレット5の裏面にA1層8を
めっき又は蒸着でもうけたものをAJに対して濡れの良
いはんだ7により加熱溶融して溶着し、かつペレット5
とインナーリード3上にもうけたAノ層6間をA!ワイ
ヤ9にて接続している。更に、これ等ペレット5やイン
ナーリード3はレジン10にて封止され、レジンモール
ド製パッケージが完成されている。
次に上記構造の牛導体装置の製造方法を第2図乃至第5
図を用いて説明する。
図を用いて説明する。
先ず、所定のパターンに形成した銅系、鉄系リードフレ
ームlのタブ2及びインナーリード3にAJをめ、5ぎ
あるいは蒸着により形成する。6一方シリコンを主体と
した牛導体ベレット5はその裏面(ボンディング面)に
第3図に示すとと<A1層8をめっきあるいは蒸着によ
り形成してお(。
ームlのタブ2及びインナーリード3にAJをめ、5ぎ
あるいは蒸着により形成する。6一方シリコンを主体と
した牛導体ベレット5はその裏面(ボンディング面)に
第3図に示すとと<A1層8をめっきあるいは蒸着によ
り形成してお(。
そしてリードフレーム1のタブ2をヒーター(図示せず
)上で窒素雰囲気を使用しかつA4とよく濡れるはんだ
7を用いて溶融温度迄加熱することにより数秒で溶融し
、前記ペレット5を揺動こすり(スクラブ)により溶着
し、ペレット裏面のM層8とタブ2のA1層6とはばん
だ7により一体化し、再び冷却固イiしたときにペレッ
ト5をタブ2に固着する。その後、ペレット5とインナ
ーリード3をAJワイヤ9で接続し、レジン10で封止
することにより第”1wJに示した牛導体装置が完成さ
れるのである。従って、以上のようにして製造された牛
導体装置によれば、ボイドの少ない高信頼度のペレット
はんだ付け(低温ボンディング)が可能になり、しかも
金、銀等の高価な貴金属めっ墜の必要性もなくなり、大
巾な原価低減につながる。
)上で窒素雰囲気を使用しかつA4とよく濡れるはんだ
7を用いて溶融温度迄加熱することにより数秒で溶融し
、前記ペレット5を揺動こすり(スクラブ)により溶着
し、ペレット裏面のM層8とタブ2のA1層6とはばん
だ7により一体化し、再び冷却固イiしたときにペレッ
ト5をタブ2に固着する。その後、ペレット5とインナ
ーリード3をAJワイヤ9で接続し、レジン10で封止
することにより第”1wJに示した牛導体装置が完成さ
れるのである。従って、以上のようにして製造された牛
導体装置によれば、ボイドの少ない高信頼度のペレット
はんだ付け(低温ボンディング)が可能になり、しかも
金、銀等の高価な貴金属めっ墜の必要性もなくなり、大
巾な原価低減につながる。
なお、本発明はレジンモールド型の半導体装置に限定さ
れるものではなく、他の型式の半導体装置も含むもので
ある。
れるものではなく、他の型式の半導体装置も含むもので
ある。
以上説明したように、本発明によれば、信頼性が高く、
しかも極めて低コストの半導体装置を得ることができる
。
しかも極めて低コストの半導体装置を得ることができる
。
第1図は本発明の半導体装置の一実施例を示す断面図、
第2図はリードフレーム上の金属めっき層を示す部分断
面図、第3図は牛導体ペレットの裏面構造の一例を示す
断面図、第4図乃至第5図は本発明の半導体装置の製造
工程を順次示す図である。 1・・・リードフレーム、2・・・タブ、3・・・イン
ナーリード、4・・・アウターリード、5・・・半導体
ペレット、6・・・AJ3層、7・・・はんだ、8・・
・A1層、9・・・A!線、10・・・レジン。
第2図はリードフレーム上の金属めっき層を示す部分断
面図、第3図は牛導体ペレットの裏面構造の一例を示す
断面図、第4図乃至第5図は本発明の半導体装置の製造
工程を順次示す図である。 1・・・リードフレーム、2・・・タブ、3・・・イン
ナーリード、4・・・アウターリード、5・・・半導体
ペレット、6・・・AJ3層、7・・・はんだ、8・・
・A1層、9・・・A!線、10・・・レジン。
Claims (1)
- ペレット付は部及びインナーリード部にアルミニウム層
を形成したリードフレームと、ペレット付は面にアルミ
ニウム層を形成した半導体ペレットと、前記両アルミニ
ウム層を結合するはんだ層と、前記半導体ペレットの電
極部と前記インナーリード部とを電気的に接続するアル
ミニウムワイヤとを具備してなる半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56167219A JPS5868944A (ja) | 1981-10-21 | 1981-10-21 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56167219A JPS5868944A (ja) | 1981-10-21 | 1981-10-21 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5868944A true JPS5868944A (ja) | 1983-04-25 |
Family
ID=15845638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56167219A Pending JPS5868944A (ja) | 1981-10-21 | 1981-10-21 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5868944A (ja) |
-
1981
- 1981-10-21 JP JP56167219A patent/JPS5868944A/ja active Pending
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