JPS5838078A - Area type solid image pickup device - Google Patents

Abstract

PURPOSE:To detect the brightness of an object at high accuracy and in a short time by reading picture element information from picture elements selected by a photometric picture element selector prior to reading of the picture element information from the whole picture elements. CONSTITUTION:Vertical shift registers VS1-VS8 and a horizontal shift register HS are provided in photoelectric conversion element sections A1-A8, B1-B8... H1-H8. Element sections A1, A8; B2, B7...H1, H8 selected symmetrically and diagonally to the center of image pickup scene are provided as photometric elements. When, for instance, the picture element information of the whole picture elements of 500X500 area type solid image pickup elements are read at 100kHz frequency, it takes 500X500X10musec=2.5sec. While by this selection, it takes 500X2X10musec=10 millisecond. By this way, the object information corresponding to the whole picture can be obtained in a short time.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement of an area-type solid-state camera element having a photometric function. Conventionally, in order to control the amount of light incident on an area-type solid-state camera element, another photoelectric conversion was performed. The output of the photoelectric conversion element is used to control the fringing on the front surface of the solid-state image sensor and to control the amount of incident light.
Because the focal point of WiK is WiK~, and because the Fi film is placed on the focal plane of the photographic lens in a normal camera, IIl
The photoelectric conversion element for light cannot be placed on the focal plane, which may cause photometry errors.

The present invention includes a photometric pixel selection means for selecting a pixel to be used for side light in an area type solid-state image sensor disposed on the focal plane of a photographic lens, and prior to reading out image information from all pixels. An ideal focal plane photometry structure that can read image information from a pixel selected by a photometry pixel selection means and detect the brightness of a subject in a short time and with high precision based on the image information from the photometry pixel. The present invention provides a solid-state imaging device having the following features.

The present invention will be explained in detail below with reference to the drawings.

FIGS. 1 and 2 are conceptual diagrams of the present invention.

Mul〜As, Bt〜Bs, see, H1〜
VB2-%-V81 is a vertical shift register % H8 horizontal shift register, VΦ1. ■１
is the clock pulse for driving the vertical shift register, Hal,
HIDs is a μk pulse for driving the horizontal shift register, FCu.

Pct: Rs - Rs t;j A field effect transistor and a resistor for charge-voltage conversion, VFa is an image output terminal, VCC is a power supply terminal, and Shi is a pulse input terminal for resetting read charges.

FIG. 1 shows photoelectric conversion elements selected diagonally, for example, symmetrically with respect to the center of the imaging screen.

Mus; Bs, By; eases; li
t, H Lu is the first person! , A number ,
Mv; Bs, B number, Bl −
Os, Co, Cm; Ds, D
4, D@; Es, B number, Bs; Ps
, F number, 1* ;Q! , G4, and Φ are selected as photometric pixels. In addition to this, it is also possible to select a plurality of pixels that are in a random positional relationship with respect to the entire imaging screen.

Therefore, for example, when reading out the image information of all pixels of a soo x soo area type solid-state image sensor at a frequency of 100 KHz, it takes 2.5 seconds (500 x 500 x 10 p
sec) However, if the photometric pixels are selected as shown in Figure 1, the time required to read out the image information of the photometric pixels is #11 (1
It takes 9 seconds (500 x 2 x 10 seconds) to obtain object brightness information corresponding to all 1i planes in a short time.

Furthermore, even if the photometric pixels are selected as shown in Fig. 2, in the interline type COD, the measurement 5v: IN element iii.
X 2 X 10 p sec) "t'Jb 'J
s 109, it is possible to obtain object brightness information corresponding to the entire surface.

FIG. 5 shows an embodiment of a concrete structure in the case where a factory-type solid-state sensor equipped with a photometric pixel selection means as shown in FIG. 1 is realized by an interline-type COD. AI, 11
11@, ass; Bl, ass, B! l
; 711, @1111Zn Id photoelectric conversion element section F 1. 2me; FAJI; FBl.

A charge transfer gate for transferring to Vsx, . . . , Vsfi.

MAl, MAn; MBs, MBs-q; se
e; MYs, MYn-+, =@; MZI,
hJZn is a predetermined photometric pixel AI.

Jun: 1r; Bs, Ha-, +1; ***
; Ya, Yn -1; Charges accumulated in Zl, Zll for photometry are transferred to vertical shift register V8s, -
..., tllr transfer case for transferring VB11K
), ckl, m@@, CZl: ***;
cA! '1@..., CZl1fa This is an integral clear gate for clearing unnecessary image information accumulated in the photoelectric conversion element section, and these gates are connected to terminals 8H,
M.W.

Controlled via ICG VΦ1. vΦl and Hat, HIz, vertical shift register VSt, . . . , V8m and a clock pulse input terminal for driving the horizontal shift register H8, field-effect transistors FC*, Pct, resistor R1, a charge consisting of It is converted into voltage information via a voltage conversion circuit, and image information corresponding to the subject is output from the VF terminal.

FIG. 4 is a timing chart of clock pulses of the main part of FIG. 3.

Vertical shift register vS1. e..., the floating charge occurring at V8m is the clock pulse Wit, VφI
It is cleared by time tx from K, and the floating charge in the horizontal shift register is also read out and cleared by clock pulse Hal by time t3.

Photoelectric conversion element part Al, Φ..., An:... dispute; Z
l, . . . are cleared via the ICG while clearing the floating charge of the analog shift register. After completion of clearing the floating charge in the analog shift register, ICG is inverted to a low level at time 1s13, and accumulation of photometric image information is started. When the accumulation of side party AM information is completed at time im, IIg party pixel 1゜All; B
s e Bll-1; s***@; Ys, yl
-1; Only pixel information accumulated in Zie Zn or charge transfer gate style 1, Man
；Kutomi, 11-1; @@11@@; h[Ys
g blYt*-x e 闩x I The vertical shift register VSI, . . . Φ . By time t4 due to vφ1, the horizontal shift register H8K% *Mu1 +Z
t l Bs +Ya.

eases, Bll-t -) Ym-t, A
The photometric information of n+Zn is stored, and Hg11. Hg)
Axr +Zn by time ti.

Bm-1+ YEI-1, @@116@, λs ten Ys
, ^* -) Zl (1) Information is outputted to the VF via the charge-voltage conversion circuit in time series.

The output photometric image information is calculated up to time 1. Based on the calculated photometric information, the integration time of the area type solid-state image sensor is controlled, and all image information is output in the order described below.

When the photometric calculation is completed at a certain time and the integration time is determined, the ICG is inverted to a low level by a control circuit (not shown), and the accumulation of image information corresponding to the subject in the photoelectric conversion element section is started.

Then, when the accumulation of 1111 m information corresponding to the object is completed at the time when the integration time determined by the photometric calculation result has elapsed, the image information accumulated in all the photoelectric conversion elements 11 corresponds to several 8 HA pulses, and the charge transfer becomes negative. FAX
, ... dispute, FAn; ・
-...; ]-B51 -...Φ・ Via Italy FZa, vertical shift register VSt,...
4I.

Transferred to VSn, clock pulse ■1. ■ From IK, the iii* information of Aa is simultaneously transferred to the L/sister H8 (horizontal shift), and by clock pulse shape l, shape l, by time t-, mu, mu l, −・・・・
Mu2. It is output in chronological order as shown in 2vi;'.

Next, clock pulse ■1 by time 1. The image information of Bl, Bs, .

In the same way, all image information with an appropriate signal level corresponding to the subject brightness can be obtained.

As described above, when the present invention is used, it is possible to obtain high-n degree photometric information in a short time from the area-type solid-state image sensor disposed on the focal plane of the photographic lens, so that it is possible to quickly locate the subject after photographing starts. It has the excellent feature of being able to obtain image information at the most suitable signal level.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an embodiment of the area type solid-state imaging device of the present invention, FIG. 2 is a diagram showing a second implementation example of the same device, and FIG. 3 is a diagram showing an example of the area type solid-state imaging device of the present invention. FIG. 4 is a diagram showing a timing chart for driving the configuration shown in FIG. 3. vS”t””eV81”in 1K”)”
:p tH8: Horizontal shift register. Person l~A$;...; Hl-Hs z photoelectric conversion section. FAu −, −FAn; **@; FZI −,,
FZm s transfer gate. MAu, bus; OS dispute; cooperation 1. Kyoho 3 pixel selection means. Hiidefu Canon Co., Ltd.

Claims (1)

[Claims] (1) Provided with pixel selection means that can selectively read out the outputs of some of the pixels located in a strategic positional relationship within the imaging plane formed by the plurality of pixels. An area-type solid-state imaging device featuring: (2) The device according to claim (1), characterized in that the photometric information is obtained from the output read by the ij'lL selection means. β) Based on the output read out by the pixel selection means,
The device according to claim 1, characterized in that the area-type body imaging device has a bare horse that controls the integration time. (4) The apparatus according to claim (1), wherein the pixel selection means is configured to select more pixels near the center of the imaging plane. 6) The pixel selection means is capable of selectively reading out the outputs of a plurality of pixels located at mutually symmetrical positions with respect to the center of the imaging plane.
). (6) Claim Φ (1) characterized in that the pixel selection means is capable of selectively reading out a plurality of pixel outputs that are in a random positional relationship with each other within the imaging plane.
Apparatus described in section.