JPS582290A - Manufacturing apparatus for semiconductor crystal - Google Patents

Abstract

PURPOSE:To uniformly regulate a temp. distribution in a direction parallel to the interface between solid and liq. phases in a container for growing a crystal to be introduced into the core tube of a furnace and to obtain a fine single crystal by installing a heat absorbing member divisible into a plurality of parts on the wall of the core tube opposite to the container. CONSTITUTION:The core tube of a furnace is composed of inner and outer tubes 11, 12 made of quartz or the like, rectangular heat absorbing members 13A-13H having large heat capacity are installed on part of the wall, e.g., between the tubes 11, 12 in this case, and the members are lifted up and down by moving stoppers 14. When a single crystal of Hg1-xCdxTe is manufactured, a material for the crystal is packed into a quartz container 1, the container is evacuated, and one end is sealed. A heater 2 is regulated so as to provide a temp. gradient 4, the position of the furnace in the (x) direction where the temp. reaches a point M of the temp. distribution 4 corresponding to the interface between liq. and solid phases is detected beforehand, and the internal temp. of the tube 11 at the part is detected at several places in a direction perpendicular to the axis of the tube. Some of the members 13 is properly moved parallel to the axial direction of the tube 11 to make the internal temp. distribution of the tube 11 uniform in a direction perpendicular to the axis of the tube 11 at the position of the furnace in the (x) direction where the temp. reaches the point M.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improved semiconductor crystal manufacturing apparatus, particularly to an improved Pritzliman crystal manufacturing apparatus.

Previously〉Mercury containing crystal evaporated mercury (Iff), etc., and used as a material for infrared sensing elements
/ (Jig 1-1) When manufacturing (34xT.)O single crystals, the Bridgman method is used.

As shown in the 1st ml, this method is a h1N Manshun $1110 111K with a rounded steel pattern at one end, for example [11-104!・After filling with the O semiconductor material, the inside of the quartz bowl is evacuated at once to seal the saturated portion.

Then, heat the quartz tic with a layer of snow on the shoulder circumference and insert it into the P core tube 8 to melt the conductor material.While lowering the iSS quartz 1, 40 □ As ll1ilI Iris-I3 Kaedeme 凰斡 9KaPengdeO temperature distribution *, ii*Spring-40 One End Mu "-North Gate [gt-KO11X?I O Obtaining a single crystal.

The X-axis heating W-ZS is summarized in ζζ, and ys indicates the heating temperature (IIL-1t), and the end point is HlB, 10104xt indicates the melting point, and ζ01
Below the M point, the stone is converted into a single crystal. A place to do IIjllll+
The shpLm4p bond formed at 1 end grew sequentially to become a single crystal, Kishiyo #, and ζζ - Sugi and Ni1-x
o mati! - and Chinsho O, the so-called solid phase and liquid phase O boundary ws becomes flat and becomes 1 -, and the high quality single crystal, crystal is pure - (Tasosho v
c**Nakasu-F-7-Moring ring confirmed.

In order to flatten the interface between the solid phase and the liquid phase, it is necessary to maintain a uniform temperature distribution in the direction parallel to the interface. Semiconductor crystal manufacturing equipment that can uniformly adjust the temperature is a must.

An object of the present invention is to provide a semiconductor crystal manufacturing apparatus that solves the above-mentioned problems.

A semiconductor crystal manufacturing apparatus for achieving this purpose is:
A furnace facing the crystal growth container in a semiconductor crystal manufacturing apparatus that performs crystallization treatment by introducing a crystal growth container equipped with a heater on the outer periphery and filled with a semiconductor material to be crystal-grown into a nine-furnace core tube. It is characterized in that a plurality of divided heat absorbing members are installed on the wall surface of the core tube to partially vary the heat capacity of the furnace core tube in the circumferential direction.

An embodiment of the present invention will be described in detail below with reference to the drawings.

The eighth intention is the vertical cross-sectional view of the semiconductor crystal manufacturing apparatus 0 of the present invention.
The figure shows a cross-sectional view of the device.

As shown in the figure, the semiconductor crystal manufacturing apparatus of the present invention has an inner tube 11 and an outer tube made of quartz. A furnace core tube is composed of, and a part of its ssag+,
That is, in this case, the outer tube 1 is a strip-shaped heat absorbing member made of carbon, for example, which has a large amount of heat and is placed between the inner and outer tubes. Bottle-shaped stopper 1 that fits into the hole provided in the inner wall of O
It is supported and installed by 4. This y trapper moves up and down by moving the pin. Although eight heat absorbing members 18M to 18H are installed between the inner tube 11 and the outer tube 12 in the figure, a larger number may be installed as appropriate. On the outer periphery of the outer tube, a shihita is installed inside. The heat absorbing member 18~18
H is movable in the vertical direction, and by moving the heat absorbing members 18mm to 18H of the cylinder up and down separately as appropriate, the heat capacity of the furnace core tube changes partially, and as a result, the heat capacity of the furnace core tube is changed, and as a result, the container is filled. Sieving is achieved by making the temperature distribution parallel to the solid-liquid interface 6 of the semiconductor crystal uniform. With this ζ, Figure OII is Hgi1. zOdx'! 'e' is the OII phase, and 16 is the liquid phase.

Hg1. xOsl yi!・When producing a single crystal of KHIIs-x in the quartz spring lIl
After filling the material of O (! IT
After exhausting K and sealing one end, adjust the heater IO temperature to give a temperature gradient as shown in No. 1-64, and adjust the heater pO heating voltage. ζ Once the distribution 4 - ゛ (liquid phase solid phase * wi > h * h'is thermal furnace □ Inner pipe O
It is detected by using a thermocouple or the like in the direction of the tube axis.

+0- Among the heat absorbing members 11A to 18, the gates are appropriately moved in the axial direction of the inner tube O to 'Fff. ``In this way, heat to the front liiIM point and 1 - 〇
Set the a degree distribution to Aya-Vcl.

ζt)*5KLfTh6*1I11ft-x'Odx?
* #Hideharu Kuishi is written down into the inner tube with a double O once.

If you do SK for ζO, it will be the front point and tk, so the heating furnace will be OK. At the position O, -tIR1#lI will be *C, and parallel 1 in the daytime at the ζO part.
Once the book is ayan, the solid-liquid interface is flat and the umbrella) Toriyuki Kame Has-go4 is low!・OII Sosaki wins b
hru.

Even if the temperature in the inner tube of Hiro% I & Kajime was adjusted in the OII example above, #IζO and other OI in the front tube with the insertion of Shoulder Ro-1! The fear is that the previous games can be changed to l$m ~■ Let the father-in-law dream in and insert the quartz vessel 1 filled with living body material into the inner tube and lower it. As for the parts, I don't feel shy even if I use carbon O, a μst number, or vμ=, wire (1■0・), abusing gH6B,
104xt* In addition to the materials, please refer to the suitable MN items when obtaining a single crystal.

As mentioned above, this book 1sle Mudo Ye Zengjing O cutting scissors set M
If you use %A, you can easily obtain single crystal crystals and manufacture crystals.
**n gives rise to the advantage of china clay.

[Brief explanation of drawings]

stmm subordinate imo tei guide yue so crystal 0 preparation 111jlI@I4
1 # 閤, happy 1lIl is this mercenary O semi-guide tsumugi aosn * 〇 - refreshing example ea * - 1, 鯵 l■ indicates the 10 e horizontal purchase cry. 11K, 1 roar 2m trial - 1 dew is heating ""ps@ is a quartz tube, 4 is a temperature bone book, easy is an interface, 11 is an inner tube, 11 is an outer tube, 1 field ~ 1sI 紘啜鴎铁material, 14 is thread bar 1t
S is liquid phase, l@ is IN$1111m is edge, MalkA
, xa$111FOIill, y is aFe*i. 1f'21 Figure 2

Claims (1)

[Claims] In a semiconductor crystal O production device that performs crystallization by introducing a crystal growth device filled with a conductive material with high conductivity to increase crystallization into the inside of a furnace core tube equipped with a heating element on the outer periphery. , A heat absorbing member divided into 0** is installed on the wall surface of the furnace core tube to be used for crystal growth in order to partially vary the heat amount of the furnace core tube in the 0 circumferential direction. A semiconductor crystal manufacturing device characterized by: