JPS582027A - Mask for x ray exposure - Google Patents
Mask for x ray exposureInfo
- Publication number
- JPS582027A JPS582027A JP56099955A JP9995581A JPS582027A JP S582027 A JPS582027 A JP S582027A JP 56099955 A JP56099955 A JP 56099955A JP 9995581 A JP9995581 A JP 9995581A JP S582027 A JPS582027 A JP S582027A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mask
- ray
- mechanical strength
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 claims description 9
- 230000008094 contradictory effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000005530 etching Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000010931 gold Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 241000255789 Bombyx mori Species 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はＸ線ｍ光用マスクに係り、特に機械的強度の向
上を図った構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an X-ray m-light mask, and particularly to a structure with improved mechanical strength.
半導体工業の発達に伴い、Ｌ、８Ｊおよび超ＬＳ１と高
精＋Ｘ度を要求され、これら高度な製造技術として、た
とえば電子ビーム露光技術が実用化されており、さらに
最近、高Ｎ−加工技術としてＸ線露光技術が実用化され
つつある。このＸ融結光を、選択的に行うためにＸ線露
光用マスクが用いら３れ、このマスクの選択精度に高度
の精一度が要求、され、る。With the development of the semiconductor industry, L, 8J, and ultra LS1 and high precision + X-ray exposure technology is being put into practical use. An X-ray exposure mask is used to selectively apply this X-fused light, and a high degree of precision is required for the selection accuracy of this mask.
従来％ Ｘｍ１ｉ光用マスクの膜の材質には、樹脂ある
いは８１０マ膜などの膜を用いる方法が知られており、
その膜の支持台には通常シリコンが主に便用されている
。Ｗ、１図（ａ）〜（ｅ）は８１０１膜などを用いた従
来のマスクの製造工程を示したもので、シリコン基板ｌ
の表面を酸化して８１０麿膜２を形成する。その後、一
方の表面上に金（Ａｕ ）などのＸ線吸収系数の高い金
属Ｉを蒸着し、この金属ＩＩを選択エツチングして所望
のパターン３＃３．・・・を第１図（ｂ）のように形成
する。次に、他方の表面の８１０ｚ 膜２について、
その周縁部を残して他の中央部を第１図（Ｃ）のように
除去する。その後、この日１０！膜２をマスクとして、
８１０．膜２とシリコン基板１との選択比の高いエッチ
ャントを用いてシリコン基板１のみをエツチングし、第
１図（ｄ）のように残つたシリコン基板ｌを支持台４と
したものである。Conventional methods of using resin or 810 mm film as the material of the film of the %Xm1i optical mask are known.
Silicon is usually used as the support for the membrane. Figures 1 (a) to (e) show the manufacturing process of a conventional mask using 8101 film, etc.
The surface of the substrate is oxidized to form an 810-marinated film 2. Thereafter, a metal I having a high X-ray absorption coefficient such as gold (Au) is deposited on one surface, and this metal II is selectively etched to form a desired pattern 3#3. ... is formed as shown in FIG. 1(b). Next, regarding the 810z film 2 on the other surface,
The central portion is removed leaving the peripheral portion as shown in FIG. 1(C). After that, 10 on this day! Using membrane 2 as a mask,
810. Only the silicon substrate 1 is etched using an etchant having a high selectivity between the film 2 and the silicon substrate 1, and the remaining silicon substrate 1 is used as a support 4 as shown in FIG. 1(d).
しかしながら、このような構造のｘ＊ｇ光用マスクアは
、８１０雪膜□２と支持台４となるシリコン基板１との
ストレス差によって、シリコンの支持台４と６１０１膜
Ｉとの境界領域５からクラックあるいは８１０を膜２の
収縮が生じ、マスクの製造が非常に困難であるｉともに
、Ｘ線の透過率を上げるためには、８１０ｍ ＪＩＪを
出来る限り薄くシカけ−ればならないため機械的強度に
も乏しく、耐久性に難点があった。However, in the x*g light masker having such a structure, due to the difference in stress between the 810 snow film □ 2 and the silicon substrate 1 which becomes the support 4, there is a difference in stress from the boundary area 5 between the silicon support 4 and the 6101 film I. Cracks or shrinkage of the 810 membrane 2 occur, making it extremely difficult to manufacture the mask.In addition, in order to increase the X-ray transmittance, the 810 m JIJ must be made as thin as possible, which reduces mechanical strength. However, there was a problem with durability.
本発明は上記事情に鑑みてなされたもので、その目的と
するところは、Ｘ線透過膜をストレス特性が相反する複
数の膜を積層して形成することにより、クラックの防止
および機械的強度の向上を図ったｘｓｇ光用マスクを提
供することにある。The present invention has been made in view of the above circumstances, and its purpose is to prevent cracks and improve mechanical strength by forming an X-ray transparent film by laminating a plurality of films with contradictory stress characteristics. An object of the present invention is to provide an improved XSG light mask.
以下、本発明の一実施例について図１を参照して説明す
る。なお、第１図と同一部分には同一符号を付して説明
する。An embodiment of the present invention will be described below with reference to FIG. Note that the same parts as in FIG. 1 will be described with the same reference numerals.
ｍ ２ 図（ａ） 〜（ｄ） Ｋ オイテ、約４００＃
乃至６００μのシリコン基板１の表面を約１０００℃乃
至１２００℃の温度で加熱することにより、シリコン着
板１０表面に厚さ約１ｏｏｏｏｉ以下の５ｉｆｔ膜（熱
酸化膜）２を形成する。次に、この８１０を膜２とはス
トレス特性が相反する。つまり逆のストレス特性を有す
る膜、たとえば低温減圧Ｃ’ＶＤによる８１０．膜６を
上記８１０ｔ 狭２上に厚さ約３０００λ以下に形成す
ることにより、８４０．膜２と８１０雪膜６とのストレ
スをコンペンセートする。さらに、上記８１０！膜６上
に機械的強度を向上させるための膜、たとえば常圧ＣＶ
Ｄ（ケミカル・ペーパ・デポジション）法による５ｉｏ
＝ｙＸｙを形成し、これらによってＸ線透過膜８を構成
する。その後、この８１０置換７上に金（Ａｕ）などの
Ｘ線吸収系数の高い金属層を蒸着し、この金属層を選択
エツチングして所望形状のパターン３．３．を第２図（
ｂ）のように形成する。次に、このパターン３と反対側
表面の周縁部Ｘ線透過膜８を残して、他の中央部のＸ線
透過膜８を第２図（Ｃ）のように選択エツチングして除
去する。その後、この残つ良Ｘ線透過膜８をマスクとし
て、露出したシリコン基板１のみをエツチングし、第２
図（ｄ）のように残ったシリコン基板１を支持台４とす
る。勿論、このエツチングはＸ線透過膜８とシリコン基
板Ｉとの選択比の高いエッチャントを用いて行うもので
あり、これにより第２図（ｄ）に示すようなＸ線露光用
マスクが得られる。m2 Figures (a) to (d) K oil, approximately 400#
A 5ift film (thermal oxide film) 2 having a thickness of about 1 ooooi or less is formed on the surface of the silicon bonded plate 10 by heating the surface of the silicon substrate 1 having a thickness of 600 μm to about 1000° C. to 1200° C. Next, the stress characteristics of this 810 and the film 2 are opposite to each other. That is, films with opposite stress characteristics, such as 810. By forming the film 6 on the 810t narrow 2 to a thickness of about 3000λ or less, the 840. The stress between the film 2 and the 810 snow film 6 is compensated. Furthermore, the above 810! A film for improving mechanical strength, such as normal pressure CV, is placed on the film 6.
5io by D (chemical paper deposition) method
=yXy, and these constitute the X-ray transparent film 8. Thereafter, a metal layer with a high X-ray absorption coefficient such as gold (Au) is deposited on this 810 substitution 7, and this metal layer is selectively etched to form a pattern 3.3. Figure 2 (
Form as in b). Next, leaving the peripheral X-ray transparent film 8 on the surface opposite to this pattern 3, the other central X-ray transparent film 8 is removed by selective etching as shown in FIG. 2(C). Then, using the remaining good X-ray transmitting film 8 as a mask, only the exposed silicon substrate 1 is etched, and the second
The remaining silicon substrate 1 is used as a support base 4 as shown in FIG. 4(d). Of course, this etching is carried out using an etchant having a high selectivity between the X-ray transparent film 8 and the silicon substrate I, and thereby an X-ray exposure mask as shown in FIG. 2(d) is obtained.
なお、上記実施例では、”０＊ Ｈ’と逆のストレス特
性を有する膜６として、低温減圧ＣＶＤ法による８１０
？膜を用いた場合について説明したが、逆のストレス特
性を有する膜であれば何れでもよく、たとえば高温８１
Ｎ Ｉｌｌ！を用いることができる。また、機械的強度
を向上させるための膜１として、通常の常〜圧ＣＶＤ法
によるＳｉｎ、膜を用いた場合について説明し九が、機
械的強度を向上させる友めの膜であれば何れでもよく、
たとえば減圧ＣＶＤ法による８１０．膜を用いることが
できる。In the above embodiment, as the film 6 having stress characteristics opposite to "0*H", 810
? Although the case where a film is used has been described, any film having opposite stress characteristics may be used, for example, at high temperature 81
N Ill! can be used. In addition, as the film 1 for improving mechanical strength, we will explain the case where a Sin film produced by ordinary pressure CVD method is used. often,
For example, 810. by low pressure CVD method. A membrane can be used.
・以上説明したように本発明によれば、Ｘ線透過膜をス
トレス特性が相反する複数の膜を積層して形成すること
によって、り２ツクの防止および機械的強度の向上が図
れるｘｍＭ光用マスクを提供できる。- As explained above, according to the present invention, by forming the X-ray transmitting film by laminating a plurality of films with contradictory stress characteristics, it is possible to prevent deformation and improve mechanical strength. We can provide masks.
第１図（ａ）〜（ｅ）は従来のＸ線露光用マスクの製蚕
工程説明図で、（ｅ）図は（ｄ）においてＡ−Ａ矢印方
向から見た平面図、第２図（ａ）〜（（１）は本発明の
一実施例に係るＸ線露光用マスクの製造工楢図である。
１・・・シリコン基板、２・・・熱酸化膜、３・・・Ｘ
線吸収パターン、４・・・支持台、６・・・低温減圧Ｃ
ＶＤ法による８１（ｈ膜、７・・・常圧Ｃ’ＶＤ法によ
る５１０８膜、８・・・Ｘ線透過膜。
出−人代理人 弁理士 鈴 圧式 彦第１図
第２図FIGS. 1(a) to 1(e) are explanatory diagrams of the silkworm production process for conventional X-ray exposure masks, and FIG. 1(e) is a plan view seen from the direction of arrow A-A in FIG. a) - ((1) is a manufacturing process diagram of an X-ray exposure mask according to an embodiment of the present invention. 1... Silicon substrate, 2... Thermal oxide film, 3... X
Line absorption pattern, 4... Support stand, 6... Low temperature decompression C
81 (h membrane) by VD method, 7... 5108 membrane by normal pressure C'VD method, 8...
Claims (1)
、なるＸ ａ Ｗｉ元開用マスクおいて、前記Ｘ線透過
膜はストレス特性が相反する複数の膜を積ｌ−シてなる
ことを特徴とするＸ４Ｉ露光用マスク。 （２）Ｘ線透過膜は、ストレス特性が相反する複数の膜
の積ｊ−にさらに機械的強度を向上させるための膜を積
層したことを特徴とする特許請求の範咄第１項記載のＸ
線露光用マスク。[Claims] In an X-ray original opening mask formed by forming an X41 absorption pattern on a flJ X-ray transparent film, the X-ray transparent film is laminated with a plurality of films having contradictory stress characteristics. An X4I exposure mask that is characterized by a (2) The X-ray transparent membrane according to claim 1, wherein a membrane for further improving mechanical strength is laminated on top of a plurality of membranes having conflicting stress characteristics. X
Mask for line exposure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56099955A JPS582027A (en) | 1981-06-27 | 1981-06-27 | Mask for x ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56099955A JPS582027A (en) | 1981-06-27 | 1981-06-27 | Mask for x ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS582027A true JPS582027A (en) | 1983-01-07 |
Family
ID=14261109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56099955A Pending JPS582027A (en) | 1981-06-27 | 1981-06-27 | Mask for x ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS582027A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124136U (en) * | 1984-07-19 | 1986-02-13 | 株式会社椿本チエイン | Feeder with robot |
| JPH05136029A (en) * | 1991-11-08 | 1993-06-01 | Shin Etsu Chem Co Ltd | Manufacturing method of mask for x-ray lithography |
-
1981
- 1981-06-27 JP JP56099955A patent/JPS582027A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6124136U (en) * | 1984-07-19 | 1986-02-13 | 株式会社椿本チエイン | Feeder with robot |
| JPH05136029A (en) * | 1991-11-08 | 1993-06-01 | Shin Etsu Chem Co Ltd | Manufacturing method of mask for x-ray lithography |
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