JPS58199575A - Photoelectric device - Google Patents
Photoelectric deviceInfo
- Publication number
- JPS58199575A JPS58199575A JP57081941A JP8194182A JPS58199575A JP S58199575 A JPS58199575 A JP S58199575A JP 57081941 A JP57081941 A JP 57081941A JP 8194182 A JP8194182 A JP 8194182A JP S58199575 A JPS58199575 A JP S58199575A
- Authority
- JP
- Japan
- Prior art keywords
- optical fiber
- chip
- cap
- metal
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013307 optical fiber Substances 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 230000008878 coupling Effects 0.000 abstract description 15
- 238000010168 coupling process Methods 0.000 abstract description 15
- 238000005859 coupling reaction Methods 0.000 abstract description 15
- 230000005855 radiation Effects 0.000 abstract description 6
- 239000000835 fiber Substances 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 239000013308 plastic optical fiber Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、比較的コア径の大きな光ファイバを伝送路と
した光フアイバ伝送系において発光もしくは受光素子と
して用いる光電装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoelectric device used as a light emitting or light receiving element in an optical fiber transmission system using an optical fiber with a relatively large core diameter as a transmission line.
光ファイバを用いた伝送系の特徴の1つは、伝送信号と
して光を用いているので電磁ノイズの影響を受けないこ
とである。しかし、伝送路の両端の光電変換部、特に光
受信部においては、微弱光2ベーン
を微弱な電気信号に変換するために外来ノイズに弱い構
成となっている。そのため、光電変換部には外来ノイズ
の1つである輻射ノイズに対して金属ケース等を用いた
シールドを行っている。One of the characteristics of transmission systems using optical fibers is that they are not affected by electromagnetic noise because they use light as the transmission signal. However, the photoelectric conversion sections at both ends of the transmission line, especially the optical reception sections, convert two vanes of weak light into weak electrical signals, and therefore are vulnerable to external noise. Therefore, the photoelectric conversion unit is shielded from radiation noise, which is one type of external noise, using a metal case or the like.
ところで、簡単な光フアイバ伝送系は、例えば第1図の
従来例に示すように、コア径の大きな取扱いの容易なプ
ラスチック光ファイバ1と、一般市販品の半導体光電素
子2とを、プラスチック成形品の光コネクタ3で結合す
る構成を用いている。By the way, a simple optical fiber transmission system, for example as shown in the conventional example shown in FIG. A configuration in which the optical connectors 3 are used for coupling is used.
電子回路部は金属ケース4で輻射ノイズ5対策を行って
も、プラスチック光コネクタ3に内蔵されている光電素
子2はノイズ対策を施していないので、輻射ノイズ5は
プラスチック光コネクタ3を透過して発受光素子2の半
導体チップ6に入射し、光フアイバ伝送系を誤動作させ
る欠点がある。さらに、光電素子2と光ファイバ1との
結合効率を上げるために半導体チップ6を光ファイバ1
に近づけると、半導体チップ6が光電素子ケース7の外
面に近づくので、さらに輻射ノイズ5の影響を受は易く
なるという欠点がある。Even if the electronic circuit part takes measures against radiated noise 5 with the metal case 4, the photoelectric element 2 built into the plastic optical connector 3 does not take measures against noise, so the radiated noise 5 passes through the plastic optical connector 3. There is a drawback that the light enters the semiconductor chip 6 of the light emitting/receiving element 2 and causes the optical fiber transmission system to malfunction. Furthermore, in order to increase the coupling efficiency between the photoelectric element 2 and the optical fiber 1, the semiconductor chip 6 is connected to the optical fiber 1.
, the semiconductor chip 6 approaches the outer surface of the photoelectric element case 7, which has the disadvantage that it becomes even more susceptible to the effects of the radiation noise 5.
3ページ
そこで本発明は、比較的コア径の大きな光ファイバ例え
ばプラスチック光ファイバと、安価な一般仕様の半導体
光電素子を結合する光伝送系において、光ファイバとの
結合効率が高く、かつ輻射ノイズの影響を受けない光電
装置を提供することを目的とするものである。Page 3 Therefore, the present invention aims to provide an optical transmission system that combines an optical fiber with a relatively large core diameter, such as a plastic optical fiber, and an inexpensive general-spec semiconductor photoelectric device, which has high coupling efficiency with the optical fiber and reduces radiation noise. The aim is to provide an optoelectronic device that is not affected.
以下、本発明につき、その一実施例を示す図面を参照し
て詳細に説明する。EMBODIMENT OF THE INVENTION Hereinafter, the present invention will be described in detail with reference to the drawings showing one embodiment thereof.
まず、本発明の一実施例の構成を第2図に示して説明す
る。図において8は光ファイバで、たとえばコア径が1
備程席と大きく、開口数(N、A・)が○、峨度のプラ
スチック光ファイバとする。9は半導体発光素子もしく
は受光素子等の光電素子の半導体チップ、1Qはチップ
9を固定する金属製のステム、11はチップ9の周囲を
覆って保護するようにしだ金属キャップで、ステム10
に結合し、前面には光ファイバ8の端面とチップ9と、
の間の光12を通過させるための開孔13を設けている
。14はチップ9の外部引出用リード、15は内部接続
用リードである。First, the configuration of an embodiment of the present invention will be described with reference to FIG. In the figure, 8 is an optical fiber, for example, the core diameter is 1
It is made of plastic optical fiber that is large in size, has a numerical aperture (N, A.) of ○, and has a strength. 9 is a semiconductor chip of a photoelectric device such as a semiconductor light emitting device or a light receiving device; 1Q is a metal stem for fixing the chip 9; 11 is a metal cap that covers and protects the chip 9;
The end face of the optical fiber 8 and the chip 9 are coupled to the front surface.
An opening 13 is provided to allow light 12 to pass through. 14 is a lead for external extraction of the chip 9, and 15 is a lead for internal connection.
光ファイバ8は、例えば図示していないがプラスチック
成形品の光コネクタによって光電素子のキャップ11の
前面16に密着−またけ近接した位置に固定される。キ
ャップ11の前面16とチップ9との距離lは、光ファ
イバ8との結合効率が高い1.0陥以下とし、キャップ
11が内部のIJ−ド15に接触しない程度の長さとす
る。The optical fiber 8 is fixed in close contact with and close to the front surface 16 of the cap 11 of the photoelectric element by, for example, an optical connector made of a plastic molded product (not shown). The distance 1 between the front surface 16 of the cap 11 and the chip 9 is set to be 1.0 or less for high coupling efficiency with the optical fiber 8, and is set to such a length that the cap 11 does not come into contact with the internal IJ-domain 15.
次に、キャップ11の開孔13について説明する。第3
図はキャップ11に設けだ開孔13の直径と、光ファイ
バ8と光電素子チップ9との結合効率(相対値)の関係
および輻射ノイズに対する耐量(相対値)の関係を表わ
しだものである。ここで、用いた光ファイバ8はコア径
1 、 Orrmlのプラスチック製光ファイバで、ノ
イズ耐量はノイズ源として電磁弁等を近傍で動作させた
場合の光電素子の誤動作の程度を表わしたものである。Next, the opening 13 of the cap 11 will be explained. Third
The figure shows the relationship between the diameter of the aperture 13 provided in the cap 11, the coupling efficiency (relative value) between the optical fiber 8 and the photoelectric element chip 9, and the relationship between the resistance to radiation noise (relative value). The optical fiber 8 used here is a plastic optical fiber with a core diameter of 1 Orrml, and the noise tolerance represents the degree of malfunction of the photoelectric element when a solenoid valve or the like is operated nearby as a noise source. .
この特性図から、開孔13の直径が小さいほどノイズ耐
量は良いが、光ファイバ8との結合効率が悪くなること
がわかる。従って開孔直径は、光ファイバのコア径と等
しい1.○滞付近が最高値となる。From this characteristic diagram, it can be seen that the smaller the diameter of the aperture 13, the better the noise resistance, but the worse the coupling efficiency with the optical fiber 8. Therefore, the aperture diameter is equal to the core diameter of the optical fiber. ○The highest value is near the stagnation point.
5ページ
しかし、実際には光電素子チップ9と光ファイバ8との
結合を行う光コネクタの寸法のずれおよび光電素子のチ
ップ9の位置精度を考慮すると、光ファイバ8のコア径
の1.5倍以下の開口直径、この図の場合は約11.5
1以下、が適している。従って、キャップ11の開孔1
3は、光ファイバ8のコア径の約1.5倍以下で、ノイ
ズ耐量又は光ファイバ8との結合効率各々の必要の程度
に応じて、最適な直径を採用すればよい。Page 5 However, in reality, considering the deviation in the dimensions of the optical connector that connects the photoelectric element chip 9 and the optical fiber 8 and the positional accuracy of the photoelectric element chip 9, the core diameter of the optical fiber 8 is 1.5 times. Opening diameter of less than or equal to, in this illustration approximately 11.5
1 or less is suitable. Therefore, the opening 1 of the cap 11
3 is approximately 1.5 times or less the core diameter of the optical fiber 8, and an optimum diameter may be adopted depending on the required degree of noise tolerance or coupling efficiency with the optical fiber 8.
このように、本装置では、金属キャップ11を金属ステ
ム上に取り付けた半導体光電素子チップ9の周囲を覆う
ように設けて電磁ノイズからの保護を図り、その金属キ
ャップ11には結合させる光ファイバ8のコア径の約1
.5倍以下の直径の開孔13を設けて結合効率を向上す
るとともに、半導体光電素子チップ9と光ファイバ8と
の結合間隔を望捷しくは1.0那以下とすることができ
る高さにして、この点でも結合効率を向上している。As described above, in this device, the metal cap 11 is provided to cover the semiconductor photoelectric element chip 9 mounted on the metal stem to protect it from electromagnetic noise, and the optical fiber 8 to be coupled to the metal cap 11 is Approximately 1 of the core diameter of
.. The aperture 13 with a diameter of 5 times or less is provided to improve the coupling efficiency, and the height is set such that the coupling interval between the semiconductor photoelectric element chip 9 and the optical fiber 8 can desirably be 1.0 mm or less. This also improves the coupling efficiency.
第4図に本発明の別の具体的な実施例を示す。FIG. 4 shows another specific embodiment of the present invention.
ここで、第2図中の構成と同様の部分には同−符6ペー
ジ
号を付している。この装置では半導体光電素子チップ9
と金属キャップ11の前面16との間隔はたとえば0.
6rrmとし、金属キャップ11の開口13は透明なガ
ラス17によって充填し、かつ金属キャップ11と金属
ステム1oを溶接して気密構造とし、チップ9の耐環境
性を良くしている。まだ金属キャップ1−1およびステ
ム10の電位は、耐ノイズ対策のだめに必要な任意の電
位、例えば接地電位にできるように専用の外部リード1
8を設けるとともに、チップ9は絶縁性のサブマウント
19上に固定して、チップ9どステム10とを電気的に
絶縁している。Here, parts similar to those in FIG. 2 are designated with the same reference numerals on page 6. In this device, a semiconductor photoelectric element chip 9
The distance between the front surface 16 of the metal cap 11 and the front surface 16 of the metal cap 11 is, for example, 0.
6 rrm, the opening 13 of the metal cap 11 is filled with transparent glass 17, and the metal cap 11 and the metal stem 1o are welded to form an airtight structure, thereby improving the environmental resistance of the chip 9. The potential of the metal cap 1-1 and the stem 10 can be set to any potential required for noise resistance, for example, the ground potential by using a dedicated external lead 1.
8 is provided, and the chip 9 is fixed on an insulating submount 19 to electrically insulate the chip 9 from the stem 10.
このように、本発明によれば、比較的コア径の大きな光
ファイバと半導体光電素子とをプラスチック成形品の光
コネクタ等を用いて結合する場合において、光電素子の
半導体チップを金属キャップで完全にシールドしている
ために半導体チップはプラスチック光コネクタを透過し
て入射する輻射ノイズ(電磁波)の影響を受けることが
なく伝送信号のS/N特性を良くすることができ、まだ
7ページ
チップのシールドを行っているためにチップと光ファイ
バとの間隔を短くすることができて光ファイバと光電素
子との結合効率を高くすることができる。さらにこれら
の効果が簡単な構成で安価に得られるので低価格で信頼
性の高い光フアイバ伝送系を実現でき、価格と使用条件
の厳しい民生機器や産業機器へ光フアイバ伝送装置の応
用を促進することができるものである。As described above, according to the present invention, when an optical fiber having a relatively large core diameter and a semiconductor photoelectric device are connected using an optical connector made of a plastic molded product, the semiconductor chip of the photoelectric device can be completely connected with a metal cap. Because it is shielded, the semiconductor chip is not affected by radiation noise (electromagnetic waves) that passes through the plastic optical connector and is incident, and the S/N characteristics of the transmitted signal can be improved. Because of this, the distance between the chip and the optical fiber can be shortened, and the coupling efficiency between the optical fiber and the photoelectric element can be increased. Furthermore, since these effects can be obtained with a simple configuration and at low cost, it is possible to realize a low-cost and highly reliable optical fiber transmission system, promoting the application of optical fiber transmission equipment to consumer equipment and industrial equipment with strict price and usage conditions. It is something that can be done.
第1図は従来の一例の光電装置の断面図、第2図は本発
明の一実施例における光電装置の断面図、第3図はその
開口直径と結合効率およびノイズ耐量の関係を表す特性
図、第4図は本発明の他の実施例における光電装置の断
面図である。
8・・・・・・光ファイバ、9・・・・・・半導体光電
素子チップ、10・・・・・・金属ステム、11・・・
・・・金属キャップ、13・・・・・・開孔。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図
第3図
開糺頁
第4図
369−FIG. 1 is a cross-sectional view of a conventional photoelectric device, FIG. 2 is a cross-sectional view of a photoelectric device according to an embodiment of the present invention, and FIG. 3 is a characteristic diagram showing the relationship between the aperture diameter, coupling efficiency, and noise tolerance. , FIG. 4 is a sectional view of a photoelectric device according to another embodiment of the present invention. 8... Optical fiber, 9... Semiconductor photoelectric element chip, 10... Metal stem, 11...
...Metal cap, 13...Open hole. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 3 Open page Figure 4 369-
Claims (1)
から出射された光を受光すべき半導体光電素子チップを
金属ステムに固定し、上記半導体光電素子チップの周囲
を覆う金属キャップを上記金属ステムに取り付け、上記
金属キャップの前面に上記光ファイバの径のほぼ1.5
倍以下の径の開孔を設けたことを特徴とする光電装置。A semiconductor photoelectric element chip that emits light to be input into an optical fiber or receives light emitted from the optical fiber is fixed to a metal stem, and a metal cap that covers the periphery of the semiconductor photoelectric element chip is attached to the metal stem. , approximately 1.5 of the diameter of the optical fiber on the front surface of the metal cap.
A photoelectric device characterized by having an aperture with a diameter equal to or less than double that of the aperture.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57081941A JPS58199575A (en) | 1982-05-14 | 1982-05-14 | Photoelectric device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57081941A JPS58199575A (en) | 1982-05-14 | 1982-05-14 | Photoelectric device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58199575A true JPS58199575A (en) | 1983-11-19 |
Family
ID=13760514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57081941A Pending JPS58199575A (en) | 1982-05-14 | 1982-05-14 | Photoelectric device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58199575A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61166431U (en) * | 1985-04-04 | 1986-10-15 | ||
JPS61168655U (en) * | 1985-04-08 | 1986-10-20 | ||
NL1004522C2 (en) * | 1995-11-14 | 1999-02-23 | Rohm Co | Semiconductor laser diode assembly and method for its manufacture. |
US6090642A (en) * | 1996-11-12 | 2000-07-18 | Rohm Co., Ltd. | Semiconductor laser diode assembly and method of manufacturing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5435692A (en) * | 1977-08-24 | 1979-03-15 | Nec Corp | Luminous semiconductor device |
JPS5730378A (en) * | 1980-07-29 | 1982-02-18 | Fujitsu Ltd | Semiconductor photodetector |
-
1982
- 1982-05-14 JP JP57081941A patent/JPS58199575A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5435692A (en) * | 1977-08-24 | 1979-03-15 | Nec Corp | Luminous semiconductor device |
JPS5730378A (en) * | 1980-07-29 | 1982-02-18 | Fujitsu Ltd | Semiconductor photodetector |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61166431U (en) * | 1985-04-04 | 1986-10-15 | ||
JPS61168655U (en) * | 1985-04-08 | 1986-10-20 | ||
NL1004522C2 (en) * | 1995-11-14 | 1999-02-23 | Rohm Co | Semiconductor laser diode assembly and method for its manufacture. |
US6090642A (en) * | 1996-11-12 | 2000-07-18 | Rohm Co., Ltd. | Semiconductor laser diode assembly and method of manufacturing the same |
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