JPS58179939A - Magnetic storage body - Google Patents

Abstract

PURPOSE:To obtain a magnetic disk or the like with superior wear and corrosion resistances, by forming a coat of one or more among silicon oxide, silicon nitride and silicon carbide each contg. H on the specular surface of a magnetic storage body. CONSTITUTION:A substrate 1 of Al, an Al alloy or the like is plated with an Ni-P alloy as a base body 2, and the body 2 is polished to a specular surface. The body 2 is then plated with a Co-Ni-P alloy as a magnetic metallic medium 3, and a silicon nitride film 4 contg. H is formed on the medium 3 by feeding a gaseous mixture of SiH4 with NH3 into plasma. A silicon carbide film 4 contg. H may be formed by feeding a gaseous mixture of SiH4 with C3H6 into plasma, or a silicon oxide film 4 contg. H may be formed using a gas contg. SiH4 and O2. Thus, a magnetic disk, a magnetic drum or the like with superior corrosion and wear resistances is obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic storage body used in a magnetic storage device (magnetic disk device, magnetic drum device, etc.), and particularly to a magnetic storage body using magnetic metal as a storage medium.

Generally, magnetic storage bodies that use magnetic metal as a storage medium have the following two main practical problems.

The first period is associated with a recording and reproducing method for a magnetic storage device including a BVi magnetic recording and reproducing device (hereinafter referred to as "DO") and a magnetic storage body.

At the start of operation, set the do and the magnetic memory surface in contact.
After the rotation, a required rotation is given to the magnetic storage body to create a space for air between the magnetic storage body and the surface of the magnetic storage body, and in this state recording and reproduction are performed. - In the stop/pu method, the rotation of the magnetic storage body stops at the end of the operation, and at this time, the surface of the magnetic storage body and the magnetic storage body are in the same frictional state as at the start of the operation.

The frictional force generated between the disk and the magnetic storage body in these contact friction states may wear out the disk and the magnetic storage body and eventually cause scratches on the disk and the metal magnetic thin film medium. Further, in the contact friction state, a slight change in the posture of the disk may cause the load applied to the disk to be uneven, and may cause scratches on the surface of the disk and the magnetic storage body.

Furthermore, during recording and reproducing, suddenly contacting the magnetic storage body causes a large frictional force to act between the magnetic storage body and the magnetic storage body.
Destruction of cards and magnetic storage often occurs. Therefore, it is necessary to coat the surface of the magnetic storage body with a protective double film in order to protect the magnetic storage body and the magnetic storage body from contact friction, contact wear, and contact breakage between the magnetic storage body and the magnetic storage body. .

The second problem is that magnetic metals are easily corroded, and this corrosion causes the magnetic properties of the magnetic metals to deteriorate or disappear, or localized corrosion causes an increase in errors.

Various protective films have been proposed to solve the above two problems, but no one has yet been found that is excellent in both wear resistance and corrosion resistance.

For example, JP-A-50-93404 or JP-A-53-
8i0. .

8i, N4.8i (1:) is known as a protective film, but neither of them can prevent corrosion of magnetic metal.

An object of the present invention is to provide a magnetic memory having excellent wear resistance and corrosion resistance.

That is, the magnetic storage body of the present invention is coated with a clayey medium of YQ rod that has been polished on one side, and on this medium is coated any one of silicon oxide, silicon nitride, and silicon carbide containing hydrogen. It is characterized by the presence of

Next, the present invention will be described in detail with reference to the drawings.

The figure is a partial sectional view of the magnetic storage body of the present invention. In the folding diagram, aluminum alloy is most often used as the base 1 of the magnetic memory body because it is light, easy to work with, and inexpensive, but titanium alloy may be used in some cases. The surface of the base is machined to create small undulations (50 μm in the circumferential direction).
100 μm or less in the radial direction).

Next, a ker-phosphorus alloy is coated on the base 1 by plating as a base body 2, and the surface of the base body 2 is mirror-finished to a maximum surface roughness of 0.03 μm or less by mechanical polishing. ? The mirror-polished surface of the substrate 2 is coated with cobalt (cobalt m) and Kel-phosphorous alloy as the metallic magnetic medium 3, and silicon nitride and silicon oxide containing hydrogen are coated on the gold (different magnetic medium 3). A protective film 4 made of one of silicon carbide and silicon carbide is coated.The protective film 4 is made of silver.

The silicon oxide, silicon nitride, and silicon carbide that are coated by the process include a component having a 5i-H bond. Components having S&-H bonds can be easily identified by measuring the infrared absorption spectrum of the protective film. Silicon oxide, silicon nitride, and silicon carbide coated by the coating method are 8i-0 and 8i N, respectively.
, 84 C bonds, but silicon oxides, silicon carbides, and silicon nitrides coated by plasma chemical vapor deposition (PCVD) K have 8 r-H bonds. The 8i-H bond has the property of reacting with invading water and oxygen to keep the cobalt-cobalt and phosphorous metal magnetic medium 3 in a reducing atmosphere, and removes the reducing medium 3 from elemental components such as water and oxygen. I can protect it. However, silicon nitride containing an 81-H bond at a temperature below am (300°C) that does not magnetize the base body made of a nickel-phosphorus alloy and does not deteriorate the magnetic properties of the cobalt-cobalt, keru-phosphorus metal magnetic medium 3. In order to form silicon oxides, silicon carbides, etc., 8iH4 is used as the raw material gas, and gases for nitriding such as NH4, N, or N, 0, 0. Nato 0 oxidation cDJhO
tf Sumata 11CH4,C,H,.

The silicon nitride, silicon oxide, and silicon carbide may be formed by introducing a gas mixture with a gas for carbonization such as C, Hl, C, H,, C, H, and CF4 into the plasma. is important. Chemical vapor deposition method without plasma (
CVD method) requires the temperature of the magnetic storage body to be 400'C or higher, and monoionic oxides, silicon nitrides, and silicon carbides that are formed do not contain 8i-H bonds, so the magnetic storage body of the present invention cannot be used. It is unsuitable as a protective film.

5i-Htfi combined LT hydrogen content #i0.11 [
It needs to be 41% or more, but in terms of wear resistance it is 5.
It is necessary that the amount is less than or equal to 2% by weight, and preferably 1 to 2% by weight.

Next, the method for manufacturing the magnetic memory of the present invention will be explained in detail using Examples and Comparative Examples. , T94.

Example 1 A sufficiently small waviness (under 5071 mu in the circumferential direction and 1 in the radial direction) was created by lathe processing and thermal straightening as a substrate l.
0 μm or less), a WJK-finished disk-shaped full minicum alloy disk is plated with a Keru-phosphorus alloy to a thickness of approximately 50 μm as the base body 2, and this Keru-phosphorus plating film is coated to a maximum surface roughness of 0. Mirror polishing was performed to a thickness of 0.02 μm and a thickness of 30 μm.

Next, a cobalt di-Kelu phosphorus alloy was plated to a thickness of 0.05 .mu.m on the Kelu phosphorus-plated film as a metal magnetic medium 3. SiH4 and NH are present in the plasma on top of this cobalt and Kelu pity film.

A magnetic disk was produced by passing a mixed gas of 500 AK to a thickness of 500 AK as a protective film of silica nitride containing hydrogen.

Example 2 A magnetic disk was produced in the same manner as in Example 1, except that N1 was used instead of NH, and the film thickness was 200 mm.

Example 3 Same as Example 1 except that SiH was used in the plasma.

A magnetic disk was fabricated by passing a mixed gas of 0, N, and 0, and coating it with silicon oxide containing hydrogen as a protective film to a thickness of 500 Å.

A magnetic disk was produced in the same manner as in Example 3, except that KO was used instead of N and O, and the film thickness was 200 AK.

Example 5 Same as Example 1 except that 8iH4 and C1 were added in the plasma.
A magnetic disk was fabricated by passing a mixed gas of H, and applying a silicon carbide containing hydrogen as a protective film to a thickness of 500λ.

Example 6 Same as Example 5, except that instead of C, H, K and CH.

A magnetic disk was made using a film with a film thickness of 200 mm.

Comparative Example 1 A magnetic disk was produced in the same manner as in Example 1, except that 81N was coated as a protective film with a thickness of 500 AK on top of the Cobalt and Kelu films by the sputtering method.

Comparative Example 2 A magnetic disk was produced in the same manner as in Comparative Example 1, except that it was coated with Sin by the spa coating method.

Comparative Example 3 A magnetic disk was produced in the same manner as in Comparative Example 1, except that 8iC was coated by the coating method.

When the infrared reflection spectra of the magnetic disks prepared in Examples 1 to 6 were measured, absorption spectra of 8i-H bonds were observed at wave numbers of 2200 cwi and 850 cwi.

However, in Comparative Examples 1 to 3, this absorption spectrum was not observed.

Using the No. 9 magnetic disk shown in Examples 1 to 6 and Comparative Examples 1 to 3, an ice crushing test (120 hours) and a cold test (90% relative humidity, temperature [40°C, January) were conducted. The number of corrosion points per unit area and the rate of increase in the number of errors were investigated.

As a result, the results shown in the table below were obtained.

From the above results, it was found that the magnetic memory of the present invention has excellent corrosion resistance or environmental resistance.

What? 20,000 times of C8 for the magnetic disks of Examples 1 to 6
After 8 repeated tests, no abnormalities such as scratches or wear marks on the surface were observed.

From the above, it was found that the magnetic memory produced according to the present invention has excellent round scratch resistance.

[Brief explanation of drawings]

Each figure is a partial sectional view of a magnetic storage body of the present invention. In the figure, l is a base, 2 is a base body, 3 is a metal magnetic medium, and 4 is a protective film.

Claims (1)

[Claims] A magnetic memory body patented in which the surface of the magnetic memory body having a mirror surface is coated with any one of silicon oxide, silicon nitride, and silicon carbide containing hydrogen.