JPS5792526A - Vaper growth of compound semiconductor - Google Patents
Vaper growth of compound semiconductorInfo
- Publication number
- JPS5792526A JPS5792526A JP16669280A JP16669280A JPS5792526A JP S5792526 A JPS5792526 A JP S5792526A JP 16669280 A JP16669280 A JP 16669280A JP 16669280 A JP16669280 A JP 16669280A JP S5792526 A JPS5792526 A JP S5792526A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- composition ratio
- gases
- tmg
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make a P type compound semiconductor blended with an element of II group grow in gaseous phase in good reproducibility, by regulating a composition ratio of an organic compound or a hydride of a V group element to an organic compound of a III group element to ≤ a composition ratio of p-n inversion and ≥ a specific value.
CONSTITUTION: A H2 gas for diluting a raw material gas is introduced to the purifier 1, partially fed to the stainless steel bubbler 2 filled with trimethyl gallium (TMG), etc. a constant amount of TMG vapor is contained in the gas, and the gas is sent to the reaction container 9. An AsH3 gas diluted with H2 gas is fed directly from the high-pressure container 3. Similarly, an impurity source, e.g., diethylzinc, for forming a layer of a P type vapor growth, diluted with H2 gas, is directly fed from the high-pressure container 4. The flow rates of these gases are controlled in a ratio of AsH3/TMG is ≤ a composition ratio of p-n inversion and ≥ 1/3 this composition ratio by the flowmeters 5,6,7, and 8, and the gases are introduced to into container 9. These gases are decomposed near the heating base 10, and are deposited as a P type GaAs layer blended with zinc on the half insulating SaAs base plate 11 on the base 10.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16669280A JPS5792526A (en) | 1980-11-28 | 1980-11-28 | Vaper growth of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16669280A JPS5792526A (en) | 1980-11-28 | 1980-11-28 | Vaper growth of compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5792526A true JPS5792526A (en) | 1982-06-09 |
Family
ID=15835963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16669280A Pending JPS5792526A (en) | 1980-11-28 | 1980-11-28 | Vaper growth of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792526A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004015781A1 (en) * | 2002-08-09 | 2004-02-19 | Sumitomo Chemical Company, Limited | Method for manufacturing compound semiconductor wafer and compound semiconductor device |
-
1980
- 1980-11-28 JP JP16669280A patent/JPS5792526A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004015781A1 (en) * | 2002-08-09 | 2004-02-19 | Sumitomo Chemical Company, Limited | Method for manufacturing compound semiconductor wafer and compound semiconductor device |
| US7208387B2 (en) | 2002-08-09 | 2007-04-24 | Sumitomo Chemical Company, Limited | Method for manufacturing compound semiconductor wafer and compound semiconductor device |
| US7576352B2 (en) | 2002-08-09 | 2009-08-18 | Sumitomo Chemical Company, Limited | Method for producing compound semiconductor wafer and compound semiconductor device |
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