JPS5789266A - Thin film solar cell - Google Patents
Thin film solar cellInfo
- Publication number
- JPS5789266A JPS5789266A JP55166188A JP16618880A JPS5789266A JP S5789266 A JPS5789266 A JP S5789266A JP 55166188 A JP55166188 A JP 55166188A JP 16618880 A JP16618880 A JP 16618880A JP S5789266 A JPS5789266 A JP S5789266A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- thin film
- solar cell
- film solar
- cdo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003708 ampul Substances 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain thermal stability with large short circuit current by using at least one of Cd I n2O4-x or DC I n2-xSn O4 as an electrode material of a thin film solar cell. CONSTITUTION:CdO, I n2O3, cd, In is powdered and weighed to make a required composition and put in a quartz ampule and, after completly exhausted, is placed in a sealed heating furnace. The temperature is kept at 600 deg.C for the first five hours and then raised 50 deg. every hour until it reaches 1,100 deg. and is left at this temperature for 20 hours. Then the temperature is gradually lowered at the rate of 50 deg. per hour and cd I n2 O4-x is obtained. By the similar process CdIn2-x SnO4 is obtained from the composition of CdO, In2O3 Sn, Cd sealed in a quartz ampulse. One or both of them are formed with a thickness of about 2,000Angstrom on a glass substrate by sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166188A JPS5789266A (en) | 1980-11-26 | 1980-11-26 | Thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55166188A JPS5789266A (en) | 1980-11-26 | 1980-11-26 | Thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5789266A true JPS5789266A (en) | 1982-06-03 |
Family
ID=15826706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55166188A Pending JPS5789266A (en) | 1980-11-26 | 1980-11-26 | Thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789266A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0675550A2 (en) * | 1994-03-24 | 1995-10-04 | Minnesota Mining And Manufacturing Company | Light transmissive, electrically-conductive, oxide film and methods of production |
-
1980
- 1980-11-26 JP JP55166188A patent/JPS5789266A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0675550A2 (en) * | 1994-03-24 | 1995-10-04 | Minnesota Mining And Manufacturing Company | Light transmissive, electrically-conductive, oxide film and methods of production |
| EP0675550A3 (en) * | 1994-03-24 | 1997-09-03 | Minnesota Mining & Mfg | Light transmissive, electrically-conductive, oxide film and methods of production. |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES471160A1 (en) | Glass mirror plate | |
| JPS5516554A (en) | Manufacture of thin film of zinc oxide | |
| CA1111373A (en) | Preparation of cadmium stannate films | |
| JPS5789266A (en) | Thin film solar cell | |
| JPS5749263A (en) | Manufacture of close contact type image sensor | |
| GB1338337A (en) | Cadmium sulphide thin film sustained conductivity device and method for making same | |
| JPS55158678A (en) | Manufacture of solar cell | |
| JPS5499561A (en) | Manufacture of binary chemical semiconductor thin film | |
| JPS5789267A (en) | Thin film solar cell | |
| JPS5469183A (en) | Preparation of transparent, electrically-conductive plastic | |
| US3502554A (en) | Method for forming thin films | |
| JPS55105384A (en) | Process of photoconductive element | |
| JPS55158549A (en) | Production of sensor | |
| JPS5766677A (en) | Solar battery cell and manufacture thereof | |
| JPS57148721A (en) | Production of liquid crystal cell | |
| JPS54133152A (en) | Liquid crystal cell | |
| JPS552236A (en) | Production of liquid crystal display device | |
| JPS5611438A (en) | Production of electrochromatic element | |
| JPS54134396A (en) | Transparent conductive film and its manufacturing process | |
| JPS5617917A (en) | Manufacture of silicon oxide film | |
| JPS5546509A (en) | Method of manufacturing solar battery | |
| JPS5227652A (en) | Sealing method of liquid crystal cell | |
| JPS57109325A (en) | Manufacture of amorphous silicon film | |
| GB1433854A (en) | Glass composition and process for its production | |
| JPS5790980A (en) | Thin film solar cell |