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JPS5788451A - Photomask - Google Patents

Photomask

Info

Publication number
JPS5788451A
JPS5788451A JP16459380A JP16459380A JPS5788451A JP S5788451 A JPS5788451 A JP S5788451A JP 16459380 A JP16459380 A JP 16459380A JP 16459380 A JP16459380 A JP 16459380A JP S5788451 A JPS5788451 A JP S5788451A
Authority
JP
Japan
Prior art keywords
alignment
photomask
alignment mark
area
circuit pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16459380A
Other languages
Japanese (ja)
Other versions
JPS6212507B2 (en
Inventor
Susumu Aiuchi
Minoru Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16459380A priority Critical patent/JPS5788451A/en
Publication of JPS5788451A publication Critical patent/JPS5788451A/en
Publication of JPS6212507B2 publication Critical patent/JPS6212507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To automatically execute a position alignment with high accuracy, by providing the first alignment mark on an alignment exclusive area of a photomask, and also forming the second specific alignment mark in a circuit pattern area. CONSTITUTION:In a photomask for manufacturing an LSI, etc., the first alignment mark is provided on the alignment exclusive area 3 of the photomask 1, and also in an area 2 of a circuit pattern, which is formed repeatedly, too, the second alignment mark which is same as the first alignment mark, approximate to it, or uses a part of it is formed. For instance, when preparing a photomask for the first process, patterns 19, 20 for the second alignment are provided on a circuit pattern area 16 of the first reticle 17, they are printed on the first photomask and are transferred to a wafer. When preparing a photomask for the second process, patterns 22-25 for the second alignment are provided on the second reticle 21, and they are printed on the second photomask. In this way, the position alignment is automatically executed with high accuracy by the second alignment mark, by use of the same detection system as that for the position alignment of the first alignment mark.
JP16459380A 1980-11-25 1980-11-25 Photomask Granted JPS5788451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16459380A JPS5788451A (en) 1980-11-25 1980-11-25 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16459380A JPS5788451A (en) 1980-11-25 1980-11-25 Photomask

Publications (2)

Publication Number Publication Date
JPS5788451A true JPS5788451A (en) 1982-06-02
JPS6212507B2 JPS6212507B2 (en) 1987-03-19

Family

ID=15796124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16459380A Granted JPS5788451A (en) 1980-11-25 1980-11-25 Photomask

Country Status (1)

Country Link
JP (1) JPS5788451A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262423A (en) * 1984-06-11 1985-12-25 Nippon Kogaku Kk <Nikon> Position detector
JPS6254263A (en) * 1985-09-02 1987-03-09 Nippon Kogaku Kk <Nikon> Mask and exposure device using equivalent mask
JPS6254432A (en) * 1985-09-02 1987-03-10 Seiko Epson Corp Semiconductor device
JPS62144168A (en) * 1985-12-18 1987-06-27 Hitachi Ltd Reticle
US6118517A (en) * 1996-08-29 2000-09-12 Nec Corporation Mask pattern for alignment

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262423A (en) * 1984-06-11 1985-12-25 Nippon Kogaku Kk <Nikon> Position detector
JPS6254263A (en) * 1985-09-02 1987-03-09 Nippon Kogaku Kk <Nikon> Mask and exposure device using equivalent mask
JPS6254432A (en) * 1985-09-02 1987-03-10 Seiko Epson Corp Semiconductor device
JPS62144168A (en) * 1985-12-18 1987-06-27 Hitachi Ltd Reticle
US6118517A (en) * 1996-08-29 2000-09-12 Nec Corporation Mask pattern for alignment

Also Published As

Publication number Publication date
JPS6212507B2 (en) 1987-03-19

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