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JPS577984A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS577984A
JPS577984A JP8244880A JP8244880A JPS577984A JP S577984 A JPS577984 A JP S577984A JP 8244880 A JP8244880 A JP 8244880A JP 8244880 A JP8244880 A JP 8244880A JP S577984 A JPS577984 A JP S577984A
Authority
JP
Japan
Prior art keywords
layer
semiconductor
semiconductor layer
propagated
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8244880A
Other languages
Japanese (ja)
Inventor
Haruo Nagai
Kenichiro Takahei
Yoshinori Nakano
Etsuo Noguchi
Hitoshi Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8244880A priority Critical patent/JPS577984A/en
Publication of JPS577984A publication Critical patent/JPS577984A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To emit light efficiently by a method wherein the light to be propagated is confined in a semiconductor layer as an active layer and it is propagated in a narrow-beamed form. CONSTITUTION:A semiconductor layer 63, consisting of a semiconductor layers 53 and 57 as active layers, and a semiconductor layer 57 as a clad layer, consisting of a semiconductor layer 64 formed by semiconductor layers 47, 51, 52, 54, 56 and 58, are formed on a substrate 41 in such manner that the semiconductor layer 63, as an active layer when it is seen from the side of section, is surrounded both in the direction of thickness and in the direction of layer by the semiconductor 64 as a clad layer. By connecting the power source, whereon the negative is given to the side of an electrode 62, is connected in between electrodes 61 and 62, light emission is obtained mainly in the vicinity of a P-N junction 60 in the semiconductor region 55 as the active layer, the emitted light is completely confined by the semiconductor layer 64 and propagated in the semiconductor layer 63.
JP8244880A 1980-06-18 1980-06-18 Semiconductor light emitting device Pending JPS577984A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8244880A JPS577984A (en) 1980-06-18 1980-06-18 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8244880A JPS577984A (en) 1980-06-18 1980-06-18 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS577984A true JPS577984A (en) 1982-01-16

Family

ID=13774799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8244880A Pending JPS577984A (en) 1980-06-18 1980-06-18 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS577984A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106342U (en) * 1982-12-28 1984-07-17 株式会社三洋 container
JPS59148382A (en) * 1983-02-14 1984-08-25 Mitsubishi Electric Corp Manufacture of injection laser
JPS59188179A (en) * 1983-04-08 1984-10-25 Nec Corp Light emitting diode
JPS6084529U (en) * 1983-11-17 1985-06-11 凸版印刷株式会社 free standing bag
JPS61105640U (en) * 1984-12-14 1986-07-04

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59106342U (en) * 1982-12-28 1984-07-17 株式会社三洋 container
JPS6221563Y2 (en) * 1982-12-28 1987-06-01
JPS59148382A (en) * 1983-02-14 1984-08-25 Mitsubishi Electric Corp Manufacture of injection laser
JPS59188179A (en) * 1983-04-08 1984-10-25 Nec Corp Light emitting diode
JPH0473315B2 (en) * 1983-04-08 1992-11-20 Nippon Electric Co
JPS6084529U (en) * 1983-11-17 1985-06-11 凸版印刷株式会社 free standing bag
JPS61105640U (en) * 1984-12-14 1986-07-04

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