[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5776844A - Method and apparatus for processing microwave plasma - Google Patents

Method and apparatus for processing microwave plasma

Info

Publication number
JPS5776844A
JPS5776844A JP15313180A JP15313180A JPS5776844A JP S5776844 A JPS5776844 A JP S5776844A JP 15313180 A JP15313180 A JP 15313180A JP 15313180 A JP15313180 A JP 15313180A JP S5776844 A JPS5776844 A JP S5776844A
Authority
JP
Japan
Prior art keywords
microwave
processing chamber
shielding plate
oven
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15313180A
Other languages
Japanese (ja)
Inventor
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15313180A priority Critical patent/JPS5776844A/en
Publication of JPS5776844A publication Critical patent/JPS5776844A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent damage of a semiconductor substrate caused by plasma particles by arranging a metal shielding plate over the semiconductor substrate place in a processing chamber in a microwave oven, thereby shielding the microwave power. CONSTITUTION:The quartz processing chamber 2 which is covered by a quartz covering body 2A is arranged in the microwave oven 1, and the semiconductor wafer 3 to be processed is placed on a table 7. Freon gas is regulated by a valve 4A and introduced into the processing chamber 2 through an inlet port 4 and discharged from an outlet 5. The microwave power of e.g. 2,45GH2 and 500W is supplied through a supply hole 6 from a microwave generator 6A. The pressure in the oven 1 is maintained at 0.1Torr. The approximately square microwave shielding plate 8 of e.g. Al with a thickness of 0.1-1.0mm. is arranged under the plasma generating area (hatched part) and over the wafer 3. Said shielding plate is arranged in parallel with the table 7, with the distance of 10-30mm. from the surface of the table 7.
JP15313180A 1980-10-31 1980-10-31 Method and apparatus for processing microwave plasma Pending JPS5776844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15313180A JPS5776844A (en) 1980-10-31 1980-10-31 Method and apparatus for processing microwave plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15313180A JPS5776844A (en) 1980-10-31 1980-10-31 Method and apparatus for processing microwave plasma

Publications (1)

Publication Number Publication Date
JPS5776844A true JPS5776844A (en) 1982-05-14

Family

ID=15555661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15313180A Pending JPS5776844A (en) 1980-10-31 1980-10-31 Method and apparatus for processing microwave plasma

Country Status (1)

Country Link
JP (1) JPS5776844A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016424A (en) * 1983-07-08 1985-01-28 Fujitsu Ltd Microwave plasma processing method and device
US5061838A (en) * 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536239A (en) * 1976-07-08 1978-01-20 Nippon Electric Co Plasma etching method
JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS536239A (en) * 1976-07-08 1978-01-20 Nippon Electric Co Plasma etching method
JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016424A (en) * 1983-07-08 1985-01-28 Fujitsu Ltd Microwave plasma processing method and device
JPH055167B2 (en) * 1983-07-08 1993-01-21 Fujitsu Ltd
US5061838A (en) * 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor

Similar Documents

Publication Publication Date Title
TW215968B (en) Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber and method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric window
TW469534B (en) Plasma processing method and apparatus
KR20230133257A (en) Low volume showerhead with porous baffle
JP2001520457A5 (en)
WO1990013687A3 (en) Apparatus and method for treating flat substrates under reduced pressure
TW349242B (en) Plasma processing method and apparatus
TW277141B (en) Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
GB2272995B (en) Method for making or treating a semiconductor
ATE148507T1 (en) DEVICE AND METHOD FOR COATING SUBSTRATES USING PLASMA DISCHARGE
EP0849811A3 (en) Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device
JPS5748226A (en) Plasma processing method and device for the same
JPS5766625A (en) Manufacture of film
JPS5776844A (en) Method and apparatus for processing microwave plasma
TW375765B (en) Method for reducing particles deposited onto a semiconductor wafer during plasma processing
JPH0348421A (en) Plasma treatment
JPS62123721A (en) Treater
DE3778794D1 (en) METHOD AND DEVICE FOR FORMING A LAYER THROUGH PLASMA MECHANICAL PROCESS.
WO2001005197A3 (en) High-speed symmetrical plasma treatment system
JPS5691432A (en) Method for drying semiconductor substrate
JPS5687331A (en) Reducing furnace for solder-treatment
JPS5298475A (en) Plasma treating apparatus
JPS57131372A (en) Plasma etching device
JPS6423537A (en) Plasma processing device
JPS57203779A (en) Plasma etching device
JPS5582438A (en) Plasma etching device