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JPS5752140A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5752140A
JPS5752140A JP12759480A JP12759480A JPS5752140A JP S5752140 A JPS5752140 A JP S5752140A JP 12759480 A JP12759480 A JP 12759480A JP 12759480 A JP12759480 A JP 12759480A JP S5752140 A JPS5752140 A JP S5752140A
Authority
JP
Japan
Prior art keywords
coating material
pellet
sealing materials
contamination
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12759480A
Other languages
Japanese (ja)
Inventor
Tadao Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON INTERNATIONAL SEIRIYUUK
NIPPON INTERNATIONAL SEIRIYUUKI KK
International Rectifier Corp Japan Ltd
Original Assignee
NIPPON INTERNATIONAL SEIRIYUUK
NIPPON INTERNATIONAL SEIRIYUUKI KK
International Rectifier Corp Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON INTERNATIONAL SEIRIYUUK, NIPPON INTERNATIONAL SEIRIYUUKI KK, International Rectifier Corp Japan Ltd filed Critical NIPPON INTERNATIONAL SEIRIYUUK
Priority to JP12759480A priority Critical patent/JPS5752140A/en
Publication of JPS5752140A publication Critical patent/JPS5752140A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the contamination and the damage of the surface of a semiconductor device by interposing a semiconductor pellet stabilized on the surface between elastic sealing materials, filling and curing coating material in the air gap between the sealing materials and coating a pellet. CONSTITUTION:Heat dissipating spacers 11 and 12 are secured to both surfaces of a semiconductor pellet 10 stabilized in advance on the surface. The pellet is placed through a coating material flow preventing frame 16 between a pair of upper and lower pressing dies 14 and 15 having elastic sealing materials 13 on the faced surfaces. Pressure P is applied from both surfaces of the pressing dies to slightly submerge the spacers 11, 12 partly in the sealing material 13. Thereafter, the coating material 17 is filled in the air gap, is then heated to cure the coating material, and the die 14 and the frame 16 are removed. In this manner, secondary discharge and damage can be prevented due to the contamination on the surface.
JP12759480A 1980-09-12 1980-09-12 Manufacture of semiconductor device Pending JPS5752140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12759480A JPS5752140A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12759480A JPS5752140A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5752140A true JPS5752140A (en) 1982-03-27

Family

ID=14963936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12759480A Pending JPS5752140A (en) 1980-09-12 1980-09-12 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752140A (en)

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