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JPS5742179A - Semiconductor device with recognition pattern - Google Patents

Semiconductor device with recognition pattern

Info

Publication number
JPS5742179A
JPS5742179A JP11798080A JP11798080A JPS5742179A JP S5742179 A JPS5742179 A JP S5742179A JP 11798080 A JP11798080 A JP 11798080A JP 11798080 A JP11798080 A JP 11798080A JP S5742179 A JPS5742179 A JP S5742179A
Authority
JP
Japan
Prior art keywords
points
center
recognition pattern
detecting
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11798080A
Other languages
Japanese (ja)
Inventor
Tetsuro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11798080A priority Critical patent/JPS5742179A/en
Publication of JPS5742179A publication Critical patent/JPS5742179A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To make compound semiconductor elements suitable for automatic assembly by employing a rough surface and a mirror finished surface provided on the crystalline plane as recognition pattern for detecting the position of the compound semiconductor element. CONSTITUTION:An n type GaP expitaxial layer 5 and a p type one 4 are laid in layers on an n type GaP substrate 6 and epitaxially grown in liquid phase while N2 is doped in an active region to create a diode wafer emitting green light. Then, the surface of the layer 4 is mirror finished almost completely and an AuZn film provided at the center of the surface and at four points 1 surrounding it. Thereafter, the wafer is boiled by hydrochloric acid to roughen the finished surface exposed excluding the center and points 1 and the AuZn film left disused is removed by etching. In this manner, the points 1 are used for a recognition pattern for detecting the position, while at the center thereof, a bonding pad 2 is provided to make a diode. This arrangement is useful for other types of semiconductors, not necessarily confined to the compound semiconductors.
JP11798080A 1980-08-27 1980-08-27 Semiconductor device with recognition pattern Pending JPS5742179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11798080A JPS5742179A (en) 1980-08-27 1980-08-27 Semiconductor device with recognition pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11798080A JPS5742179A (en) 1980-08-27 1980-08-27 Semiconductor device with recognition pattern

Publications (1)

Publication Number Publication Date
JPS5742179A true JPS5742179A (en) 1982-03-09

Family

ID=14725028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11798080A Pending JPS5742179A (en) 1980-08-27 1980-08-27 Semiconductor device with recognition pattern

Country Status (1)

Country Link
JP (1) JPS5742179A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012527116A (en) * 2009-05-11 2012-11-01 クリー インコーポレイテッド Semiconductor light-emitting diode having a reflective structure and manufacturing method thereof
US8741715B2 (en) 2009-04-29 2014-06-03 Cree, Inc. Gate electrodes for millimeter-wave operation and methods of fabrication
JP2014203874A (en) * 2013-04-02 2014-10-27 スタンレー電気株式会社 Flip-chip semiconductor light-emitting element, semiconductor device and manufacturing method of the same
US8878245B2 (en) 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911578A (en) * 1972-06-02 1974-02-01
JPS5474678A (en) * 1977-11-28 1979-06-14 Hitachi Ltd Detection method of chip location on semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911578A (en) * 1972-06-02 1974-02-01
JPS5474678A (en) * 1977-11-28 1979-06-14 Hitachi Ltd Detection method of chip location on semiconductor wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8878245B2 (en) 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
US8643039B2 (en) 2007-11-14 2014-02-04 Cree, Inc. Lateral semiconductor Light Emitting Diodes having large area contacts
US8741715B2 (en) 2009-04-29 2014-06-03 Cree, Inc. Gate electrodes for millimeter-wave operation and methods of fabrication
JP2012527116A (en) * 2009-05-11 2012-11-01 クリー インコーポレイテッド Semiconductor light-emitting diode having a reflective structure and manufacturing method thereof
JP2014203874A (en) * 2013-04-02 2014-10-27 スタンレー電気株式会社 Flip-chip semiconductor light-emitting element, semiconductor device and manufacturing method of the same

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