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JPS5740924A - Exposing method and device for electron beam resist - Google Patents

Exposing method and device for electron beam resist

Info

Publication number
JPS5740924A
JPS5740924A JP11661080A JP11661080A JPS5740924A JP S5740924 A JPS5740924 A JP S5740924A JP 11661080 A JP11661080 A JP 11661080A JP 11661080 A JP11661080 A JP 11661080A JP S5740924 A JPS5740924 A JP S5740924A
Authority
JP
Japan
Prior art keywords
electron beam
beam resist
resist
stage
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11661080A
Other languages
Japanese (ja)
Inventor
Hiroji Harada
Yoshikazu Obayashi
Isao Shibata
Kyusaku Nishioka
Yoji Masuko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11661080A priority Critical patent/JPS5740924A/en
Publication of JPS5740924A publication Critical patent/JPS5740924A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To increase the sensitivity and the efficiency of pattening by the irradiation of an electron beam for the subject device by a method wherein supersonic waves are applied on the electron beam resist when performing an electron beam irradiation and with the help of this energy, the G value of the electron beam resist is improved. CONSTITUTION:The substrate 2 whereon an electron beam resist 3 was applied is placed on a stage 1 and when a patterning is performed using the electron beam 4, a supersonic wave generating element 6 is attached to the stage 1. The energy to be applied to the supersonic wave generating element is feeded by a power source 8. The supersonic waves are sent to the electron beam resist 3 through the intermediaries of the stage 1 and the substrate 2. Through these procedures, lattice osillation energy is increased and the sensitivity of the resist can also be improved.
JP11661080A 1980-08-22 1980-08-22 Exposing method and device for electron beam resist Pending JPS5740924A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11661080A JPS5740924A (en) 1980-08-22 1980-08-22 Exposing method and device for electron beam resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11661080A JPS5740924A (en) 1980-08-22 1980-08-22 Exposing method and device for electron beam resist

Publications (1)

Publication Number Publication Date
JPS5740924A true JPS5740924A (en) 1982-03-06

Family

ID=14691424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11661080A Pending JPS5740924A (en) 1980-08-22 1980-08-22 Exposing method and device for electron beam resist

Country Status (1)

Country Link
JP (1) JPS5740924A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014572A (en) * 1988-11-03 1991-05-14 Emitec Gesellschaft Fur Emissionstechnologie Mbh Assembled crankshaft
US5134900A (en) * 1988-11-03 1992-08-04 Emitec Gesellschaft Fur Emissionstechnologie Mbh Crankshaft with hollow pins

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014572A (en) * 1988-11-03 1991-05-14 Emitec Gesellschaft Fur Emissionstechnologie Mbh Assembled crankshaft
US5134900A (en) * 1988-11-03 1992-08-04 Emitec Gesellschaft Fur Emissionstechnologie Mbh Crankshaft with hollow pins

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