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JPS5723227A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS5723227A
JPS5723227A JP9691980A JP9691980A JPS5723227A JP S5723227 A JPS5723227 A JP S5723227A JP 9691980 A JP9691980 A JP 9691980A JP 9691980 A JP9691980 A JP 9691980A JP S5723227 A JPS5723227 A JP S5723227A
Authority
JP
Japan
Prior art keywords
plasma etching
facing electrodes
etching device
sample
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9691980A
Other languages
Japanese (ja)
Inventor
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9691980A priority Critical patent/JPS5723227A/en
Publication of JPS5723227A publication Critical patent/JPS5723227A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To contrive to unify etching speed of a plasma etching device by a method wherein the intervals between a sample electrode and facing electrodes are made as variable locally. CONSTITUTION:Electric field strength and density of reaction gas in the plasma etching device are compensated by regulating the distances between the sample electrode and the divided facing electrodes making supporting bars 12-14 of the divided facing electrodes 9-11 to move up and down by respectively independent driving mechanisms 15-17, and uniform etching speed can be obtained extending over the whole surface of a sample 4. By this constitution, yield can be enhanced without damaging characteristic of the semiconductor element. Plural modificatins of electrode structure can be considered.
JP9691980A 1980-07-17 1980-07-17 Plasma etching device Pending JPS5723227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9691980A JPS5723227A (en) 1980-07-17 1980-07-17 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9691980A JPS5723227A (en) 1980-07-17 1980-07-17 Plasma etching device

Publications (1)

Publication Number Publication Date
JPS5723227A true JPS5723227A (en) 1982-02-06

Family

ID=14177760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9691980A Pending JPS5723227A (en) 1980-07-17 1980-07-17 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS5723227A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217330A (en) * 1983-05-26 1984-12-07 Toshiba Corp Reactive ion etching device
EP0266288A2 (en) * 1986-10-30 1988-05-04 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing method and apparatus
JPH05275375A (en) * 1992-03-30 1993-10-22 Nec Kyushu Ltd Dry-etching equipment
US6217714B1 (en) 1995-06-29 2001-04-17 Matsushita Electric Industrial Co., Ltd. Sputtering apparatus
WO2001052302A1 (en) * 2000-01-10 2001-07-19 Tokyo Electron Limited Segmented electrode assembly and method for plasma processing
WO2002007184A3 (en) * 2000-07-13 2002-06-20 Tokyo Electron Ltd Adjustable segmented electrode apparatus and method
WO2002033729A3 (en) * 2000-10-16 2002-08-01 Tokyo Electron Ltd Plasma reactor with reduced reaction chamber
JP2003037464A (en) * 1993-05-27 2003-02-07 Seiko Epson Corp Frequency-adjusting processor
JP2005209809A (en) * 2004-01-21 2005-08-04 Murata Mfg Co Ltd Etching equipment and etching method using the same
US20100068887A1 (en) * 2008-09-15 2010-03-18 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
TWI397100B (en) * 2005-06-13 2013-05-21 Lam Res Corp Plasma reactor and method for using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458362A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Dry etching method
JPS5512733A (en) * 1978-07-14 1980-01-29 Anelva Corp Dry process etching device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458362A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Dry etching method
JPS5512733A (en) * 1978-07-14 1980-01-29 Anelva Corp Dry process etching device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217330A (en) * 1983-05-26 1984-12-07 Toshiba Corp Reactive ion etching device
EP0266288A2 (en) * 1986-10-30 1988-05-04 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing method and apparatus
US5125360A (en) * 1986-10-30 1992-06-30 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing apparatus
JPH05275375A (en) * 1992-03-30 1993-10-22 Nec Kyushu Ltd Dry-etching equipment
JP2003037464A (en) * 1993-05-27 2003-02-07 Seiko Epson Corp Frequency-adjusting processor
US6217714B1 (en) 1995-06-29 2001-04-17 Matsushita Electric Industrial Co., Ltd. Sputtering apparatus
WO2001052302A1 (en) * 2000-01-10 2001-07-19 Tokyo Electron Limited Segmented electrode assembly and method for plasma processing
US6863020B2 (en) 2000-01-10 2005-03-08 Tokyo Electron Limited Segmented electrode apparatus for plasma processing
US6962664B2 (en) 2000-01-10 2005-11-08 Tokyo Electron Limited Controlled method for segmented electrode apparatus and method for plasma processing
WO2002007184A3 (en) * 2000-07-13 2002-06-20 Tokyo Electron Ltd Adjustable segmented electrode apparatus and method
US6916401B2 (en) 2000-07-13 2005-07-12 Tokyo Electron Limited Adjustable segmented electrode apparatus and method
WO2002033729A3 (en) * 2000-10-16 2002-08-01 Tokyo Electron Ltd Plasma reactor with reduced reaction chamber
JP2005209809A (en) * 2004-01-21 2005-08-04 Murata Mfg Co Ltd Etching equipment and etching method using the same
TWI397100B (en) * 2005-06-13 2013-05-21 Lam Res Corp Plasma reactor and method for using the same
US20100068887A1 (en) * 2008-09-15 2010-03-18 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
US8382941B2 (en) * 2008-09-15 2013-02-26 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
US8715519B2 (en) 2008-09-15 2014-05-06 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods

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